2SB1015A TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm 10+0.3 3.2402 2740.2 ¢ Low Collector Saturation Voltage : VOR (sat) = —1.7 V Max.) FAS (Ig = -3 A, Ip = -0.3 A) Ly als © Collector Power Dissipation : Pg = 25 W (Te = 25°C) g || 2 z MAXIMUM RATINGS (Ta = 25°C) asso | | $ | CHARACTERISTIC SYMBOL UNIT | ccsoast | |assvons Collector-Base Voltage Vcpo | -60 [ V_ || » E Collector Emitter Voltage Voro | -60 |v] a 3 r 2 a Emitter-Base Voltage VEBO S : 2. COLLECTOR Collector Power Ta=25°C| w 3. EMITTER Dissipation Te=25c| © JEDEC = Junction Temperature Ay Bae Storage Temperature Range —55~150 TOSHIBA _2-10R1A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-03-30 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. max.[unzr] Collector Cut-off Current IcBoO Vcp = —60V, Ip =0 | — | — [-100]| pA | Emitter Cutoff Current | Teno [VER = =TV, Io =0 b= p= a t00 | a Collector-Emitter hFE(1) VcE = -5V,I¢ = -0.5A DC Current Gain (Note) [VOB = “SV: Io = -08 Collector-Emitter _ _ Saturation Voltage Vox (sat) [Ic = -3 A, Ip = -0.3A | = | -05]-1.7] V Base-Bmitter Voltage | Vag _[Vop=~5A,Ig=—05A | — |-07 | =i] V_ Transition Frequency | fr __—*([Vor = -5V, Ic = -0.5A [ — | 9| — [Mm | Collector Output Capacitance Vop = =10V, Ip=0, f= 1M] — | i50[ — | oF | Tpi3L] input “EYE Switchin; . i zane J eee Vcc = -30V Fall Time te ~Ipi = Ip2 = 0.2A, 0.5 DUTY CYCLE = 1% (Note) : hg (1) Classification O : 60~120, Y : 100~200 1999-03-30 2/3
Ic — VCE Ic - VBE “TTT TTT ees “ : cure LLL LA ses o -3| - [> Vor =-5V : Fa oot EPpy (| ea ETO g 2 1 fA 30 E Te = 100°C Oo =20 i=] : | fee ao i Pees Ceo 40 eeee 3 / © frre} LLY ol i!) COLLECTOR-EMITTER VOLTAGE Vcg (V) BASE-EMITTER VOLTAGE VpE (V) 1000 hre — Ic 1 VCE (sat) - Ic Feet 4] Zo | eee | COMMON EMITTER ic} COMMON EMITTER (oo FF] vor = -5v Eo Io/Ip = 10 Foon 500 en i ce BE 05) CEP Boece |r Ee ox HM i
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Se -Ie ee ert = A a eeNS Snel 2 eee ey Sn oe ene a 5 Poe SOS £3 -0.08}-—} ae Ee i=] sop Tr NNN gs ie g fT TT ‘AY 3 Liat a oo LLM TT TIE TT i 5-005 20! 0.02 -O1 -03 -1 -3 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ig (A) SAFE OPERATING AREA Rth(t) — tw 10 00 pe z PER cay) WITHOUT HEAT SINK Bg TTT mse
5 EI (2) INFINITE HEAT SINK a N AKC 100 msi
ee a | 2 _,[tcMaxcconmmuous) | AC} 9 © ee =| | areas SANT a CeAPAWEAT UI al ca - EH
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Fe FEA 8 LINEARLY wit increase |_| | | |I/| & a a | | | || IN TEMPERATURE. il Pe oe : Vono MAX. 10-8 10-2 10-1 1 10 102 -1 -3 -10 -30 -100 TIME t (s) COLLECTOR-EMITTER VOLTAGE Vcg (V) inns 4995-03-30 373