ATR7032 ATMEL | Alldatasheet

Document overview

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Technical content

Features

  • Frequency Range 2.4 GHz to 2.5 GHz  Supply Voltage 2.7V to 3.6V  32 dB Power Gain  23 dBm Linear Output Power for IEEE 802.11b Mode Operation  EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation  On-chip Power Detector with 20 dB Dynamic Range  Power-down Mode and Biasing Control  Input and Interstage Matching Fully On-chip  Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm)

Applications

 IEEE 802.11b DSSS WLAN  IEEE 802.11g OFDM WLAN  PC Cards, PCMCIA, Access Points  2.4 GHz ISM Band Application 1. Description This power amplifier (PA) is designed for high-performance 802.11b and 802.11g multi-mode applications such as Mini PCI and PCMCIA for portable devices and access points. The low profile plastic package with internal input matching to 50 Ω and on-chip interstage matching minimizes the PCB board-space and allows simplified integration with very few passive components. The on-chip power detector provides a voltage linear to the output power, while the standby/bias control logic provides power-saving and shutdown options. The PA is realized as a three stage PA with internal interstage matching and an open-collector output structure. The power amplifier is designed using At mel’s Silicon-Germanium (SiGe2) process and provides excellent linearity and noise performance, high gain, and good power- added efficiency. High Gain Power Amplifier for 802.11b/g WLAN Systems ATR7032 Preliminary Rev. 4846B–WLAN–04/05

4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 1-1. Block Diagram RF_IN IC GND_RF V_PA1 13 10 9 Interstage Matching 50 Ω Input Match Voltage Detector Standby/ Bias Circuitry RF_OUT RF_OUT RF_OUT RF_OUT 7Interstage Matching 1 2 3 4 Paddle GND_RF IC V_PA2 NC NC ATR7032VCTRL VCC GND_VCC VDET

4846B–WLAN–04/05 ATR7032 [Preliminary] 2. Pin Configuration Figure 2-1. Pinning QFN16 IC V_PA2 NC NC IC RF_IN GND V_PA1 RF_OUT RF_OUT RF_OUT RF_OUT 16 15 14 13 5 6 7 8 ATR7032 VCTRL VCC GND_VCC VDET Table 2-1. Pin Description Pin Symbol Function

1 VCTRL Power-up/biasing control voltage

2 VCC Supply voltage

3 GND_VCC Ground

4 VDET Power detector voltage

5 RF_OUT RF output

6 RF_OUT RF output

7 RF_OUT RF output

8 RF_OUT RF output

9 NC Not connected

10 NC Not connected

11 V_PA2 Supply voltage PA stage 2

12 IC Internally connected, on-chip matc hing; must not be externally connected

13 V_PA1 Supply voltage PA stage 1

14 GND Ground

15 RF_IN RF input

16 IC Internally connected, on-chip matc hing; must not be externally connected

Slug – Ground

4846B–WLAN–04/05 ATR7032 [Preliminary] 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Test Conditions Symbol Value Unit Supply voltage V CC TBD V Supply current I CC 600 mA Junction temperature T j 150 °C Storage temperature T Stg –40 to +125 °C Input RF power P IN 12 dBm Control voltage power up/down and biasing VCONTR 0 to +3.0 V ESD protection, all pins EIA/JESD22-A114-B V ESD 500 V Note: 1. The part may not survive all maximums applied simultaneously. 4. Operating Range Parameters Symbol Value Unit Supply voltage range V CC 2.7 to 3.6 V Ambient temperature range T amb –40 to +85 °C Frequency range f 2400 to 2500 MHz 5. Electrical Characteristics Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.0 Control voltage range PA operating mode V CONTR 12 V A 1.1 Power down mode V CONTR 0.2 A 1.2 Current consumption Quiescent I CQ 90 mA A

1.3 Power down mode I PD 10 µA A

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

4846B–WLAN–04/05 ATR7032 [Preliminary] 6. Electrical Characteristics – Unmodulated Carrier Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions Pi n Symbol Min. Typ. Max. Unit Type*

2.0 Saturated output

power For reference P SAT 28.5 dBm A

2.1 P1dB output power P1dB 27 dBm A

2.2 Harmonic rejection P OUT = 23 dBm 2fout

–45 –30 dBc dBc C C

2.3 Small signal gain ICQ, small signal

2.4 Gain variation

ICQ, small signal condition 2.4 to 2.5 GHz –40 to +85°C Gvarfreq Gvartemp –1.5 +1.5 dB dB A C

2.5 Reverse isolation ICQ, small signal

2.6 Input 50 Ω VSWR ICQ, small signal

condition VSWRIN 2:1 C

2.7 Output 50 Ω VSWR

ICQ, small signal condition, with external matching VSWROUT 2:1 C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 7. Electrical Characteristics – 11 Mbps CCK Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

3.0 Maximum linear

ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc PLIN 23 dBm A

3.1 Linear power gain

POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc GL 32 dB A

3.2 Current consumption

POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc ICC 220 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 8. Electrical Characteristics – 54 Mbps OFDM Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM measurement result. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

4.0 Error vector

magnitude POUT = 19 dBm EVM 2.0 % A

4.1 Linear power gain P OUT = 19 dBm GL 32 dB A

4.2 Current consumption P OUT = 19 dBm I CC 150 mA A

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

4846B–WLAN–04/05 ATR7032 [Preliminary] 10. Application Circuit Figure 10-1. Application Board Schematic 9. Power Detector Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

5.0 Detector voltage

range POUT = 5 to 25 dBm V DET 02 V A 5.1 Settling time P OUT = 5 to 25 dBm t SET 0.5 µs C

5.2 Detector accuracy

POUT = 5 to 25 dBm VCC = 2.7 to 3.6V Tamb = –40 to +85°C ∆POUT ±0.7 dB C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter C10(1) VCTRL C9(1) T2 C7 V_PA3 VDET PA_Out V_PA1 RF_IN VCC IC GND_RF 13 10 9 ATR7032 NC NC Interstage Matching 50 Ω Input Match Voltage Detector Standby/ Bias Circuitry IC 1112 7Interstage Matching 1 2 3 4 PaddleGND_RF V_PA2 R1(1) C12(1)C11(1) C19 C18(1)C17(1) C16(1) T1, T2: Microstrip Line Microstrip Line Length/mm Width/mm T1 4.3 0.64 T2 5.6 0.64 Metal layer distance to ground: 360 µm CU metal layer thickness: 35 µm ε r of dielectric material (FR4): 4.5 (1) Components can be omitted depending on application IC: internally connected; pin must not be connected to any other pin or supply chain

4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 10-2. Application Board Layout Table 10-1. Bill of Materials for Application Board Component Reference Value Size Capacitor C 1 4p7 0603 Capacitor C 2 56p 0603 Capacitor C 3 56p 0603 Capacitor C 4 56p 0603 Capacitor C 5 1p8 0603 Capacitor C 7 4p7 0603 Capacitor C 8 4p7 0603 Capacitor C 9 4p7 0603 Capacitor C 10 (1) 10n 0603 Capacitor C 11 (1) 10n 0603 Capacitor C 12 (1) 10n 0603 Capacitor C 16 (1) 1µ 0603 Capacitor C 17 (1) 1µ 0603 Capacitor C 18 (1) 1µ 0603 Capacitor C 19 (1) 1µ 0603 Resistor R 1 22k 0603 Inductor L 1 15n 0603 Inductor L 2 15n 0603 Inductor L 3 15n 0603 Note: 1. Components can be omitted depending on application

4846B–WLAN–04/05 ATR7032 [Preliminary]

10.1 Evaluation Board Set-up Instructions

After connection of all cables (RF and DC): V CC, VV_PA1, VV_PA2, VRF_Out = 3.3V  Increase VCTRL until 90 mA quiscent current without RF signal is reached (~ 1.05V)  Incease input power until desired linear output power is reached 11. Typical Operating Characteristics Figure 11-1. Typical Gain and Current versus Control Voltage: Frequency = 2450 MHz; PIn = –40 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Figure 11-2. Typical Operating Point for 54 Mbps OFDM Modulation: Frequency = 2450 MHz; POut = 19 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V -30 -20 -10 VCTRL (V) 100 150 200 250 300 350 I (mA) Gain Gain (dB) Itot IV_PA3 IV_PA2 IV_PA1 + IVCC 0.5 1.5 2.5 3.5 EVM (%) 110 120 130 140 150 160 170 180 I (mA) EVM I Operating Point Itot VCTRL (V)

4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-7. Typical Spectral Plot Conforming Compliance to 802.11b Spectral Mask for

11 Mbps CCK Modulation at Operating Point: POut = 23 dBm;

Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 220 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Figure 11-8. Typical Power-sweep with 54 Mbps OFDM Modulation at Operating Point: Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Span 100 MHz10 MHz/Center 2.45 GHz -70 A TRG LVL EXT 55 dBc 33 dBc LINE ACPRBU_G MARG LIMIT CHECK MARG 22.79 dBmCH PWR * RBW 100 kHz * VBW 100 kHz * SWT 20 ms* At t 0 dBRef 21.1 dBm

1 RM *

Offset 20.8 dB20 -10 -20 -30 -40 -50 -60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 15 16 17 18 19 20 21 POut (dBm) EVM (%) 100 110 120 130 140 150 160 170 180 I (mA) EVM Itot

4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-9. Typical Spectral Plot Conforming Compliance to 802.11g Spectral Mask for

54 Mbps OFDM Modulation at Operating Point:

POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 150 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Figure 11-10. Typical Detector Voltage versus POut for Unmodulated Carrier (Temperature and VCC parameterized): Frequency = 2450 MHz; VCTRL = 1.05 V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 2.7V, 3.3V, 3.6V; Tamb = –40°C, 25°C, 85°C * RBW 100 kHz * VBW 100 kHz * SWT 20 ms* At t 5 dBRef 13.1 dBm Offset 20.8 dB10 -10 -20 -30 -40 -50 -60 -70 -80 18.98 dBmCH PWR A TRG LVL EXT GAT Span 100 MHz10 MHz/Center 2.45 GHz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -5 -1 3 7 11 15 19 23 27 POut (dBm) Voltage (V) VDET

4846B–WLAN–04/05 ATR7032 [Preliminary] 13. Package Information 12. Ordering Information Extended Type Number Package Remarks MOQ ATR7032-PVPW QFN16, 3 × 3 Taped and 80 mm reeled, RoHs compliant 6000 pcs. ATR7032-PVQW QFN16, 3 × 3 Taped and 330 mm reeled, RoHs compliant 1500 pcs. ATR7032-DEV-BOARD – Evaluation board 1 0.25 1.7 1613 12 1 0.4±0.1 0.9±0.1 0.05 0.5 nom. 1.5 +0-0.05 2.68 0.15 specifications according to DIN technical drawings Not indicated tolerances ±0.05 Dimensions in mm Package: QFN 16 - 3x3 Exposed pad 1.7x1.7 (acc. JEDEC OUTLINE No. MO-220) Drawing-No.: 6.543-5115.01-4 Issue: 1; 07.03.05 Assembly Chip PAC

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