ATP613 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Reverse recovery time t rr=60ns(typ.) • ON-resistance R DS(on)=1.55Ω(typ.)
  • Input Capacitance Ciss=350pF(typ.) • 10V drive
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 500 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 5.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 19 A Source-to-Drain Diode Forward Current (DC) IS 5.5 A Source-to-Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% 19 A Allowable Power Dissipation P D Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 93 mJ Avalanche Current *2 I AV 5.5 A Note : *1 VDD=99V , L=5mH, IAV=5.5A *2 L≤5mH, Single pulse (Fig.1) Package Dimensions unit : mm (typ) 7057-001 D1510QB TKIM TC-00002545 SANYO Semiconductors DATA SHEET ATP613 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 TL ATP613 LOT No. 2,4

No. A1903-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=2.75A 1.5 2.9 S Static Drain-to-Source On-State Resistance RDS(on) I D=2.75A, VGS=10V 1.55 2.0 Ω Input Capacitance Ciss VDS=30V, f=1MHz 350 pF Output Capacitance Coss 68 pF Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time td(on) See Fig.2 14.2 ns Rise Time tr 46 ns Turn-OFF Delay Time td(off) 37.6 ns Fall Time tf 20.4 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=5.5A 13.8 nC Gate-to-Source Charge Qgs 3.2 nC Gate-to-Drain “Miller” Charge Qgd 7.6 nC Diode Forward Voltage VSD IS=5.5A, VGS=0V 1.1 1.5 V Reverse Recovery Time trr See Fig.3 IS=5.5A, VGS=0V, di/dt=100A/μs 60 ns Reverse Recovery Charge Qrr 120 nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Resistance Test Circuit P. G RGS=50Ω G S D ID=2.75A RL=72.8Ω VDD=200V VOUT ATP613 VIN PW=10μs D.C.≤0.5% 10V VIN 50Ω ≥50Ω RG VDD L 10V ATP613 G S D VDD=50V ATP613 500μH Driver MOSFET G S D

No. A1903-3/5 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Tc IS -- VSD SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS VDS=20V IT16201 IT16202 01 2 100 2026 1 2 48 1 6 1410 18 624 8 VGS=5V --25 Tc=75 Tc=25°C 10V 15V Tc= --25 25°C 75°C 05 0 3530 40 45151052 0 2 5 IT16208IT16207 IT16206 0.01 IT16205 --25 f=1MHz Coss Crss Tc=75 0.01 0.1 223 5 2357 1.035 7 107 100 1000 0.1 1.0 723 5 10 VDD=200V VGS=10V td(off) tf td(on) tr IT16203 5.0 152 4 6 8 1 01 21 4 4.5 3.0 4.0 3.5 0.5 1.0 2.5 2.0 1.5 ID=2.75A Single pulse Tc=75°C --25°C 0.1 23 5 7 Ciss Tc= --25 75°C 25°C 0.1 0.01 1.0 1.0 100 100 1000 25°C VDS=10V IT16204 --50 --25 0 25 50 75 100 125 150 5.0 3.5 1.5 0.5 4.5 3.0 2.5 4.0 2.0 1.0 VGS=10V , I D=2.75A Single pulse VGS=0V Single pulse

No. A1903-4/5 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT16212 PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT16211 20 40 60 80 100 140 120 160 IT16710 0.01 0.1 1.0 1.0 IDP=19A (PW≤10μs) ID=5.5A 100μs 1ms 10ms 100msDC operation Operation in this area is limited by RDS(on). 1023 5 7 2 100 100035 7 2 3 7 5 10μs 100 IT16209 1614121024 8 6 VDS=200V ID=5.5A Tc=25°C Single pulse

No. A1903-5/5PS This catalog provides information as of December, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.