ATP405 SANYO | Alldatasheet

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Technical content

Features

  • 10V drive.
  • Avalanche resistance guarantee.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 40 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 160 A Allowable Power Dissipation P D Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 148 mJ Avalanche Current *2 I AV 40 A Note : *1 VDD=30V , L=100μH, IAV=40A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 100 V Zero-Gate Voltage Drain Current I DSS V DS=100V, VGS=0V 10 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.0 3.5 V Marking : ATP405 Continued on next page. 42209QA MS IM TC-00001943 SANYO Semiconductors DATA SHEET ATP405 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1458-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=10V, ID=20A 62 S Static Drain-to-Source On-State Resistance RDS(on) I D=20A, VGS=10V 25 33 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 4000 pF Output Capacitance Coss V DS=20V, f=1MHz 300 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 170 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 38 ns Rise Time tr See speci fi ed Test Circuit. 125 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 220 ns Fall Time tf See specifi ed Test Circuit. 150 ns Total Gate Charge Qg V DS=60V, VGS=10V, ID=40A 68 nC Gate-to-Source Charge Qgs V DS=60V, VGS=10V, ID=40A 14 nC Gate-to-Drain “Miller” Charge Qgd V DS=60V, VGS=10V, ID=40A 15 nC Diode Forward Voltage VSD IS=40A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit Avalanche Resistance Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=20A RL=3Ω VDD=60V VOUT ATP405 VIN 10V VIN 50Ω10V ≥50Ω VDD L ATP405

No. A1458-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS(off) IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Cutoff V oltage, VGS(off) -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14607 IT14604 --50 --25 150 03 0 10 15 20 255 1000 IT14611 IT14609IT14608 0.1 1.0 23 5 7 100 0.001 0.01 0.1 1.0 100 1.0 10000 2 1035 7 1005723 0.1 1.0 23 5 7 2 1035 7 7 523 0 25 50 75 100 125 100 °C 25 Tc= --25 --25 Tc=75 Tc= --25 25°C 75°C VDS=10V Tc=75 --25 Ciss Crss IT14610 100 1000 td(off) VDD=60V VGS=10V f=1MHz tr IT14606 2468 1 03579 IT14605 Tc=25°C VGS=4.0V VDS=10V tf VGS =10V , I D=20A 8.0V Cosstd(on) 4.5V6.0V 10.0V --25°C 25°C Tc=75°C Single pulseID=20A Single pulse VGS=0V Single pulse

No. A1458-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT14603 IT14602 20 40 60 80 100 120 140 160 IT14613IT14612 01 0 2 0 5 0 40 70 6030 80 VDS=60V ID=40A 0.01 0.1 1.0 0.01 0.1 IDP=160A ID=40A 100 μs1ms 10ms 100ms DC operation Operation in this area is limited by RDS(on). 1.0 10 22 35 723 5 723 5 723 5 7 100 10μs100 PW≤10μs Tc=25°C Single pulse