ATP301 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Avalanche resistance guarantee.
  • 10V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -28 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -112 A Allowable Power Dissipation P D Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 54 mJ Avalanche Current *2 I AV - -28 A Note : *1 VDD=- -30V , L=100μH, IAV=- -28A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -100 V Zero-Gate Voltage Drain Current I DSS V DS=--100V, VGS=0V -- 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -2.0 - -3.5 V Marking : ATP301 Continued on next page. 42209QA MS IM TC-00001941 SANYO Semiconductors DATA SHEET ATP301 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1457-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=--10V, ID=- -14A 32 S Static Drain-to-Source On-State Resistance RDS(on) I D=--14A, VGS=--10V 57 75 mΩ Input Capacitance Ciss V DS=- -20V, f=1MHz 4000 pF Output Capacitance Coss V DS=- -20V, f=1MHz 270 pF Reverse Transfer Capacitance Crss V DS=- -20V, f=1MHz 150 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 32 ns Rise Time tr See speci fi ed Test Circuit. 130 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 330 ns Fall Time tf See specifi ed Test Circuit. 190 ns Total Gate Charge Qg V DS=- -60V, VGS=- -10V, ID=- -28A 73 nC Gate-to-Source Charge Qgs V DS=- -60V, VGS=- -10V, ID=- -28A 16 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -60V, VGS=- -10V, ID=- -28A 14 nC Diode Forward Voltage VSD IS=- -28A, VGS=0V - -1.0 - -1.5 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit Avalanche Resistance Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --14A RL=4.3Ω VDD= --60V VOUT VIN --10V VIN ATP301 50Ω0V --10V ≥50Ω RG VDD L ATP301

No. A1457-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS(off) IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Cutoff V oltage, VGS(off) -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14595 IT14592 --50 --25 150 1000 IT14599 IT14597IT14596 --0.1 --1.023 5 7 100 --0.001 --0.01 --0.1 --1.0 --10 --100 1.0 10000 2 --1035 7 5 23 --0.1 --1.023 5 7 2 --1035 7 5 23 0 25 50 75 100 125 100 °CTc= --25 --25 °CTc=75 Tc= --25 25°C 75°C VDS= --10V Tc=75 --25 Ciss Crss IT14598 100 1000 td(off) VDD= --60V VGS= --10V f=1MHz tr --10 --60 --50 --40 --30 --20 --10 --60 --50 --40 --30 --20 IT14594 160 120 100 140 200 120 100 140 160 180 IT14593 Tc=25°C VGS= --4.0V VDS= --10V tf VGS = --10V , I D= --14A --8.0V Coss td(on) --4.5V --6.0V --10.0V Single pulse ID= --14A --25°C 25°C Tc=75°C Single pulse VGS=0V Single pulse

No. A1457-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT14603 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT14601IT14600 01 0 2 0 5 0 40 70 6030 80 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 VDS= --60V ID= --28A IT14602 --0.01 --0.1 --1.0 --10 --0.1 IDP= --112A ID= --28A 100μs1ms 10ms 100msDC operation Operation in this area is limited by RDS(on). --1.023 5 7 --1023 5 7 2 2 35 7 --100 10μs--100 20 40 60 80 100 140 120 160 Tc=25°C Single pulse PW≤10μs