ATP218 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)1=2.9mΩ(typ.) • Input Capacitance Ciss=6600pF(typ.)
  • 2.5V drive • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 100 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 300 A Allowable Power Dissipation P D Tc=25°C6 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 235 mJ Avalanche Current *2 I AV 50 A Note : *1 VDD=15V , L=100μH, IAV=50A *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 51111PA TKIM TC-00002592 SANYO Semiconductors DATA SHEET ATP218 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 TL ATP218 LOT No. 2,4

No.8970-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=50A 260 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=50A, VGS=4.5V 2.9 3.8 m Ω RDS(on)2 I D=25A, VGS=2.5V 4.0 5.6 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 6600 pF Output Capacitance Coss V DS=10V, f=1MHz 780 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 600 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 88 ns Rise Time tr See speci fi ed Test Circuit. 960 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 340 ns Fall Time tf See specifi ed Test Circuit. 320 ns Total Gate Charge Qg V DS=15V, VGS=4.5V, ID=100A 70 nC Gate-to-Source Charge Qgs V DS=15V, VGS=4.5V, ID=100A 20 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=4.5V, ID=100A 14 nC Diode Forward Voltage VSD IS=100A, VGS=0V 0.91 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P. G 50Ω G S D ID=50A RL=0.3Ω VDD=15V VOUT ATP218 VIN 4.5V VIN ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A VDS=10V IT16418 IT16419 0 2.5 1.50 100 150 120 1.00.5 2.0 3.0V VGS=1.5V --25 °C25 Tc=75 8.0V Tc=25°C 1.8V 6.0V 2.0V2.5V 3.5V 4.5V

No.8970-3/4 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Tc IS -- VSD SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT16427 0.1 1.0 0.1 IDP=300A (PW≤10μs) ID=100A 100μs1ms 10ms 100ms DC operationOperation in this area is limited by RDS(on). 1.023 5 7 2 10 10035 7 2 3 7 5 10μs 100 1000 03 0 10 15 20 255 IT16425IT16424 IT16423 0.001 0.0175 IT16422 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 223 5 2357 1035 7 1007 VGS=0V 1000 100 10000 1.0 0.1 1.0 23 5 7723 5 1000100 VDD=15V VGS=4.5V td(off) tf td(on) tr IT16420 1.0 6.0 1024 36 58 9 7 5.5 4.0 5.0 4.5 1.5 2.0 2.5 3.5 3.0 Tc=25°C ID=25A 0.175 10 23 5 7 23 5 7 Ciss Tc= --25 75°C 25°C 1.0 100 1000 1.075 1075 100 1000 100 10000 1000 100000 50A VDS=10V IT16421 --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS=2.5V , I D=25A VGS=4.5V , I D=50A IT16426 7010 20 30 40 60 50 VDS=15V ID=100A Tc=25°C Single pulse

No.8970-4/4PS This catalog provides information as of May, 2011. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP218 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C 25 50 75 100 125 150 100 120 175 IT16429IT16428 20 40 60 80 100 140 120 160