ATP213

ATP213 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• Large current.
• Slim package.
• 4V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 50 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 150 A Allowable Power Dissipation P D Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 37 mJ Avalanche Current *2 I AV 25 A Note : *1 VDD=10V , L=100μH, IAV=25A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current I DSS V DS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP213 Continued on next page. 80509PA TK IM TC-00002021 SANYO Semiconductors DATA SHEET ATP213 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1526-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=25A 55 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=25A, VGS=10V 12 16 m Ω RDS(on)2 I D=13A, VGS=4.5V 15 21 m Ω RDS(on)3 I D=7A, VGS=4V 17 26 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 3150 pF Output Capacitance Coss V DS=20V, f=1MHz 310 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 190 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 23 ns Rise Time tr See speci fi ed Test Circuit. 170 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 230 ns Fall Time tf See specifi ed Test Circuit. 150 ns Total Gate Charge Qg V DS=30V, VGS=10V, ID=50A 58 nC Gate-to-Source Charge Qgs V DS=30V, VGS=10V, ID=50A 10.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=50A 12.5 nC Diode Forward Voltage VSD IS=50A, VGS=0V 1.01 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=25A RL=1.2Ω VDD=30V VOUT ATP213 VIN 10V VIN

No. A1526-3/4 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS 06 0 20 30 40 5010 IT14844IT14843 IT14842 0.001 0.0175 IT14841 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 223 5 2357 1035 7 1007 100 0.1 1.0 23 5 7723 5 100 VDD=30V VGS=10V td(off) tf td(on) tr IT14839 IT14840 1624 36 58 9 71 0 1 2 11 --50 --25 0 25 50 75 100 125 15014 1513 ID=7A 25A IT14837 IT14838 0 5.0 1.50 4.5V VGS=3.0V --25 Tc=75 0.175 10 23 5 7 16.0V Ciss 8.0V 10.0V VGS=4.0V , I D=7A VGS=10.0V , I D=25A Tc= --25 75°C 25°C 1.0 100 1.075 1075 10075 Tc= --25 100 1000 3.5V 4.0V 6.0V 13A VGS=4.5V , I D=13A Tc=25°C Single pulse VDS=10V Single pulse Single pulseTc=25°C Single pulse VDS=10V Single pulse VGS=0V Single pulse

No. A1526-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of August, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT10478 A S O PD -- Tc Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT14846IT14845 6010 20 30 40 50 VDS=30V ID=50A IT14847 0.1 1.0 223 5 7 23 5 70.1 1.0 35 7 10 100 Operation in this area is limited by RDS(on). 10μs100 μsID=50A IDP=150A DC operation 1ms 10ms 100ms3 100 20 40 60 80 100 120 140 160 PW≤10μs Tc=25°C Single pulse