ATP212

ATP212 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• Large current.
• Slim package.
• 4V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 35 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 105 A Allowable Power Dissipation P D Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 19 mJ Avalanche Current *2 I AV 18 A Note : *1 VDD=10V , L=100μH, IAV=18A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current I DSS V DS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP212 Continued on next page. 62409PA TK IM TC-00001998 SANYO Semiconductors DATA SHEET ATP212 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1507-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=18A 35 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=18A, VGS=10V 17 23 m Ω RDS(on)2 I D=9A, VGS=4.5V 23 33 m Ω RDS(on)3 I D=5A, VGS=4V 25 37 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 1820 pF Output Capacitance Coss V DS=20V, f=1MHz 150 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 100 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 16 ns Rise Time tr See speci fi ed Test Circuit. 110 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 125 ns Fall Time tf See specifi ed Test Circuit. 87 ns Total Gate Charge Qg V DS=30V, VGS=10V, ID=35A 34.5 nC Gate-to-Source Charge Qgs V DS=30V, VGS=10V, ID=35A 6.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=35A 6.8 nC Diode Forward Voltage VSD IS=35A, VGS=0V 0.96 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=18A RL=1.67Ω VDD=30V VOUT ATP212 VIN 10V VIN

No. A1507-3/4 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS 06 0 20 30 40 5010 IT14748IT14747 IT14746 0.001 0.0175 IT14745 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 223 5 2357 1035 7 100 0.1 1.0 23 5 7723 5 100 VDD=30V VGS=10V td(off) tf td(on) tr IT14743 IT14744 16214 36 58 9 71 0 1 2 11 --50 --25 0 25 50 75 100 125 15014 1513 VDS=10V Single pulse ID=5A 18A IT14741 IT14742 0 5.5 1.50 3.5V 4.5V VGS=2.5V --25 25°C Tc=75 0.175 10 23 5 7 16.0V Ciss 8.0V 10.0V VGS=4.0V , I D=5A VGS=10.0V , I D=18A Tc= --25 75°C 25°C 1.0 1.075 1075 10075 Tc= --25 100 1000 3.0V 4.0V 6.0V VGS=4.5V , I D=9A Tc=25°C Single pulse Single pulse VGS=0V Single pulse VDS=10V Single pulse Tc=25°C Single pulse

No. A1507-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of June, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C IT14750 25 50 75 100 125 150 100 120 175 IT10478 IT14751 IT14749 4010 15 20 25 30 35 VDS=30V ID=35A A S O PD -- Tc Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W 0.1 1.0 223 5 7 23 5 70.1 1.0 35 7 10 100 Operation in this area is limited by RDS(on). 10μs100 μsID=35A IDP=105A DC operation 1ms10ms 100ms 100 20 40 60 80 100 120 140 160 PW≤10μs Tc=25°C Single pulse