ATP208 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Large current.
  • Slim package.
  • 4.5V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 90 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 270 A Allowable Power Dissipation P D Tc=25°C6 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 155 mJ Avalanche Current *2 I AV 45 A Note : *1 VDD=15V , L=100μH, IAV=45A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 40 V Zero-Gate Voltage Drain Current I DSS V DS=40V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP208 Continued on next page. 11409PA MS IM TC-00001776 SANYO Semiconductors DATA SHEET ATP208 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1396-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.5 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=45A 16 28 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=45A, VGS=10V 4.6 6.0 m Ω RDS(on)2 I D=23A, VGS=4.5V 7 9.8 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 4510 pF Output Capacitance Coss V DS=20V, f=1MHz 535 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 385 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 35 ns Rise Time tr See speci fi ed Test Circuit. 400 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 280 ns Fall Time tf See specifi ed Test Circuit. 200 ns Total Gate Charge Qg V DS=20V, VGS=10V, ID=90A 83 nC Gate-to-Source Charge Qgs V DS=20V, VGS=10V, ID=90A 19 nC Gate-to-Drain “Miller” Charge Qgd V DS=20V, VGS=10V, ID=90A 17 nC Diode Forward Voltage VSD IS=90A, VGS=0V 1.0 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=45A RL=0.44Ω VDD=20V VOUT ATP208 VIN 10V VIN

No. A1396-3/4 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS 100 1000 10000 405 1 52 02 53 03 510 IT14329IT14328 IT14327 0.001 0.0175 IT14326 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 223 100 223 5 757 1035 7 VGS=0V Single pulse 1000 100 0.1 1.0 23 5 7723 5 100 VDD=20V VGS=10V td(off) tf td(on) tr IT14324 IT14325 162 4 6 8 10 12 --60 --40 --20 0 20 40 60 80 100 120 140 16014 Tc=25°C Single pulse Tc=25°C VDS=10V ID=23A 45A IT14322 IT14323 0 5.5 1.50 140 120 100 4.0V 4.5V VGS=3.5V --25 25°C Tc=75 Single pulse 6.0V 0.175 10 23 5 7 16.0V Ciss 8.0V 10.0V VGS=4.5V , I D=23A VGS=10.0V , I D=45A Tc= --25 75°C 25°C VDS=10V 1.0 1.075 1075 10075 Tc= - -25

No. A1396-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of January , 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 0.1 1.0 22 3 57 2 3 570.1 1.0 35 7 10 IT14331IT14330 9030 40 50 60 70 8020 10VDS=20V ID=90A PW≤10μs Operation in this area is limited by RDS(on). 10μs100 μs ID=90A IDP=270A DC operation Tc=25°C Single pulse 1ms 10ms 100ms 25 50 75 100 125 150 100 120 175 IT10478 100 IT14332 20 40 60 80 100 120 140 160