ATP206 SANYO | Alldatasheet

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Technical content

Features

  • Low ON-resistance.
  • Large current.
  • Slim package.
  • 4.5V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 40 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% 120 A Allowable Power Dissipation P D Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 26 mJ Avalanche Current *2 I AV 20 A Note : *1 VDD=10V , L=100μH, IAV=20A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 40 V Zero-Gate Voltage Drain Current I DSS V DS=40V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP206 Continued on next page. 10709PA MS IM TC-00001774 SANYO Semiconductors DATA SHEET ATP206 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1395-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.5 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=20A 91 5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=20A, VGS=10V 12 16 m Ω RDS(on)2 I D=10A, VGS=4.5V 20 28 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 1630 pF Output Capacitance Coss V DS=20V, f=1MHz 205 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 19 ns Rise Time tr See speci fi ed Test Circuit. 110 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 83 ns Fall Time tf See specifi ed Test Circuit. 73 ns Total Gate Charge Qg V DS=20V, VGS=10V, ID=40A 27 nC Gate-to-Source Charge Qgs V DS=20V, VGS=10V, ID=40A 7.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=20V, VGS=10V, ID=40A 5.2 nC Diode Forward Voltage VSD IS=40A, VGS=0V 0.99 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=20A RL=1Ω VDD=20V VOUT ATP206 VIN 10V VIN

No. A1395-3/4 IT14333 IT14334 IT14335 IT14336 --60 --20--40 0 20 40 60 80 100 160 120 140 2.00.5 1.5 1.0 .0V 6.0V 4.5V 10.0V Tc=25°C VDS=10V VGS=3.5V IT14338 0.001 0.01 0.1 1007 1.0 IT14337 --25 Tc=75 0.1 23 5 7 23 5 7 23 5 71.0 10 1.0 VDS=10V Tc= --25 75°C VGS=0V Single pulse --25 Tc=75 Tc= --25 51 5 1 6 13971 1 1 4624 31 0 81 2 ID=10A 20A Single pulse Tc=25°C Single pulse VGS=10.0V , I D=20A VGS=4.5V , I D=10A 4.0V 25°C 8.0V IT14339 100 0.1 1.0 23 5 7 23 5 7 23 5 7 10 100 VDD=20V VGS=10V td(off) tr tf td(on) 100 1000 10 30 40 2051 5 3 5 25 IT14340 f=1MHz Ciss Coss Crss Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No. A1395-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of January, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. IT14342IT14341 IT14343 3025 201051 5 25 50 75 100 125 150 100 120 175 IT10478 VDS=20V ID=40A 0.1 1.0 0.1 1.0 10 723 5723 5723 5 100 20 40 60 80 100 140 120 160 IDP=120A Operation in this area is limited by RDS(on). Tc=25°C Single pulse DC operation 100ms 10ms 1ms 100 μs 10μsID=40A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- A Allowable Power Dissipation, PD -- W PD -- Tc Case Temperature, Tc -- °C PW≤10μs