ATP204 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • 4.5V drive.
  • Large current.
  • Slim package.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 100 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 300 A Allowable Power Dissipation PD Tc=25°C6 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 235 mJ Avalanche Current *2 IAV 50 A Note : *1 VDD=15V , L=100μH, IAV=50A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Marking : ATP204 Continued on next page. 91609PA TK IM TC-00002081 SANYO Semiconductors DATA SHEET ATP204 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1551-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=50A 100 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=50A, VGS=10V 4.3 5.6 m Ω RDS(on)2 I D=25A, VGS=4.5V 6.5 9.1 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 4600 pF Output Capacitance Coss V DS=10V, f=1MHz 700 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 390 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 40 ns Rise Time tr See speci fi ed Test Circuit. 690 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 205 ns Fall Time tf See specifi ed Test Circuit. 110 ns Total Gate Charge Qg V DS=15V, VGS=10V, ID=100A 70 nC Gate-to-Source Charge Qgs V DS=15V, VGS=10V, ID=100A 22 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=10V, ID=100A 9.2 nC Diode Forward Voltage VSD IS=100A, VGS=0V 1.03 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=50A RL=0.3Ω VDD=15V VOUT ATP204 VIN 10V VIN

No. A1551-3/4 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS 10075 100 1000 10000 3051 5 2 0 2 510 IT15005IT15004 IT15003 0.001 0.0175 IT15002 --25 f=1MHz Coss Crss Tc=75 0.1 1.0 23 5 723 5 7 5 10 100 723 100 1.0 VDS=10V 25°C Tc= --25 75°C 1000 100 0.1 1.0 23 5 7723 5 100 VDD=15V VGS=10V td(off) tf td(on) tr IT15000 IT15001 162 4 6 8 10 12 --60 --40 --20 0 20 40 60 80 100 120 140 16014 VGS=4.5V , I D=25A ID=25A 50A IT14998 IT14999 06 20 100 150 130 110 514 3 140 120 100 4.0V 4.5V VGS=3.5V --25 25°C Tc=75 Tc= --25 °CVDS=10VTc=25°C 6.0V 0.175 1.075 1075 10 23 5 7 8.0V 16.0V 10.0V Ciss °C 25 VGS=10.0V , I D=50A Single pulseTc=25°C Single pulse VGS=0V Single pulse

No. A1551-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of September, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP204 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT14011 A S O PD -- Tc Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT14983 20 40 60 80 100 120 140 160 IT14982 0.1 1.0 0.1 IDP=300A ID=100A 100μs1ms 10ms 100ms DC operationOperation in this area is limited by RDS(on).1.023 5 7 2 1035 7 2 10μs 100 PW≤10μs Tc=25°C Single pulse IT15006 7030 40 60 5020 10VDS=15V ID=100A