ATP201 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • 4.5V drive.
  • Slim package.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 35 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 105 A Allowable Power Dissipation PD Tc=25°C3 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 10 mJ Avalanche Current *2 IAV 18 A Note : *1 VDD=10V , L=50μH, IAV=18A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Marking : ATP201 Continued on next page. 82609PA TK IM TC-00002027 SANYO Semiconductors DATA SHEET ATP201 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1547-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=18A 24 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=18A, VGS=10V 13 17 m Ω RDS(on)2 I D=9A, VGS=4.5V 23 33 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 985 pF Output Capacitance Coss V DS=10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 100 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 10 ns Rise Time tr See speci fi ed Test Circuit. 230 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 51 ns Fall Time tf See specifi ed Test Circuit. 39 ns Total Gate Charge Qg V DS=15V, VGS=10V, ID=35A 17 nC Gate-to-Source Charge Qgs V DS=15V, VGS=10V, ID=35A 4.7 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=10V, ID=35A 2.8 nC Diode Forward Voltage VSD IS=35A, VGS=0V 0.97 1.2 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID=18A RL=0.83Ω VDD=15V VOUT ATP201 VIN 10V VIN

No. A1547-3/4 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14959 IT14962 --60 --40 --20 160 03 0 10 15 20 255 100 IT14966 IT14964IT14963 0.1 1.0 23 5 7 23 5 7 23 5 1.0 0.001 0.01 0.1 1.0 100 1000 04 0 20 60 80 100 120 140 °CTc= --25 --25 °CTc=75 Tc=25°C Single pulse Single pulse Tc= --25 25°C 75°C Tc=75 --25 VGS=0V Single pulse Ciss Crss IT14965 0.1 7 1.023 5 7 23 527 1035 100 1000 td(off) VDD=15V VGS=10V f=1MHz tr IT14961 246 79 1 1 1 6 13 1535 8 1 0 1 2 1 4 IT14960 4.5V VGS=4.0V .0V 6.0V VDS=10V Single pulse VDS=10V Single pulse tf 25°C VGS=4.5V , I D=9A VGS=10.0V , ID=18A 10.0V Coss td(on) 8.0V ID=9A 18A Tc=25°C Single pulse

No. A1547-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of August, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP201 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT14011 IT14968 0.1 1.0 0.1 IDP=105A ID=35A 100 μs 1ms 10ms 100ms DC operation Tc=25°C Single pulse IT14967 04 1 6 12 20821 4 1 8 106 VDS=15V ID=35A 1.023 5 7 2 1035 7 2 20 40 60 80 100 120 140 160 IT14969 10μs 100 Operation in this area is limited by RDS(on). PW≤10μs