ATP108 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Large current.
  • Slim package.
  • 4.5V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -70 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -210 A Allowable Power Dissipation P D Tc=25°C6 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 95 mJ Avalanche Current *2 I AV - -35 A Note : *1 VDD=- -15V , L=100μH, IAV=- -35A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -40 V Zero-Gate Voltage Drain Current I DSS V DS=--40V, VGS=0V -- 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP108 Continued on next page. N1109PA TK IM TC-00002147 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1604-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.5 - -2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=- -35A 65 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=--35A, VGS=--10V 8 10.4 mΩ RDS(on)2 I D=--18A, VGS=--4.5V 11.5 16.5 mΩ Input Capacitance Ciss V DS=- -20V, f=1MHz 3850 pF Output Capacitance Coss V DS=- -20V, f=1MHz 560 pF Reverse Transfer Capacitance Crss V DS=- -20V, f=1MHz 390 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 19 ns Rise Time tr See speci fi ed Test Circuit. 340 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 340 ns Fall Time tf See specifi ed Test Circuit. 290 ns Total Gate Charge Qg V DS=- -20V, VGS=- -10V, ID=- -70A 79.5 nC Gate-to-Source Charge Qgs V DS=- -20V, VGS=- -10V, ID=- -70A 20 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -20V, VGS=- -10V, ID=- -70A 15 nC Diode Forward Voltage VSD IS=- -70A, VGS=0V - -1.05 - -1.5 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --35A RL=0.57Ω VDD= --20V VOUT VIN --10V VIN ATP108

No. A1604-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT15183 IT15180 1000 10000 IT15187 IT15185 --0.001 --0.01 --0.1 --1.0 --10 --100 --0.1 --1.023 5 7 2 --10 --10035 7 5 7 23 °CTc= --25 --25 Tc=75 Tc=75 --25 Ciss Crss IT15186 100 1000 td(off) VDD= --20V VGS= --10V tr --10 --90 --50 --70 --80 --60 --20 --30 --40 --10 --100 --90 --30 --20 --40 --50 --80 --70 --60 IT15182 IT15181 --4.0V VGS= --3.5V --16.0V tf Coss td(on) --4.5V --10.0V ID= --18A --35A IT15184 --0.1 --1.023 5 7 100 1.0 2 --10 --10035 7 5 7 23 Tc= --25 25°C 75°C f=1MHz --8.0V --6.0V --50 --25 150 0 25 50 75 100 125 VGS= --4.5V , I D= --18A VGS= --10V , ID= --35A Tc=25°C Single pulse VDS= --10V Single pulse Single pulseTc=25°C Single pulse VGS=0V Single pulse VDS= --10V Single pulse IS -- VSD

No. A1604-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP108 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT15179 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT15189IT15188 0 1 02 03 04 0 8 0 50 60 70 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 IT15190 --0.1 --1.0 --10 --0.1 IDP= --210A ID= --70A 100 μs1ms10ms100ms DC operation Operation in this area is limited by RDS(on). --1.023 5 7 2 --1035 7 2 3 7 5 10μs --100 20 40 60 80 100 140 120 160 VDS= --20V ID= --70A PW≤10μs Tc=25°C Single pulse