ATP106_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance • Large current
  • Slim package • 4.5V drive
  • Halogen free compliance • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -30 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -90 A Allowable Power Dissipation P D Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 30 mJ Avalanche Current *2 I AV - -15 A Note : *1 VDD=- -10V , L=200μH, IAV=- -15A *2 L≤200μH, Single pulse Package Dimensions unit : mm (typ) 7057-001

61312 TKIM/N0409PA TKIM TC-00002145

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network ATP106-TL-H Product & Package Information

  • Package : ATPAK
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL ATP106 LOT No. 4,2

No.A1597-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -40 V Zero-Gate Voltage Drain Current I DSS V DS=--40V, VGS=0V -- 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.5 - -2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=- -15A 28 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=--15A, VGS=--10V 19 25 mΩ RDS(on)2 I D=--8A, VGS=--4.5V 29 41 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 1380 pF Output Capacitance Coss 210 pF Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 12 ns Rise Time tr 120 ns Turn-OFF Delay Time td(off) 110 ns Fall Time tf 90 ns Total Gate Charge Qg VDS=- -20V, VGS=- -10V, ID=- -30A 29 nC Gate-to-Source Charge Qgs 6.4 nC Gate-to-Drain “Miller” Charge Qgd 5.9 nC Diode Forward Voltage VSD IS=- -30A, VGS=0V - -0.97 - -1.5 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ATP106-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID= --15A RL=1.33Ω VDD= --20V VOUT VIN --10V VIN ATP106

No.A1597-3/7 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT15125 IT15122 --50 --25 150 1000 100 IT15129 IT15127 --0.001 --0.01 --0.1 --1.0 --10 --100 --0.1 --1.023 5 7 2 --1035 7 5 7 23 0 25 50 75 100 125 °CTc= --25 --25 Tc=75 Tc=75 --25 Ciss Crss IT15128 100 1000 td(off) VDD= --20V VGS= --10V tr --5 --10 --35 --25 --30 --15 --20 --5 --10 --15 --50 --25 --20 --30 --35 --45 --40 IT15124 IT15123 --4.0V VGS= --3.0V --16.0V tf VGS= --4.5V , I D= --8A VGS= --10V , ID= --15A --8.0V Coss td(on) --4.5V--6.0V --10.0V ID= --8A --15A --3.5V VDS= --10V Single pulse IT15126 --0.1 --1.023 5 7 1.0 2 --1035 7 5 7 23 Tc= --25 25°C 75°C VDS= --10V Single pulse f=1MHz Tc=25°C Single pulse Tc=25°C Single pulse Single pulse VGS=0V Single pulse

No.A1597-4/7 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT15133 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT15131IT15130 0 5 10 15 25 20 30 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 VDS= --20V ID= --30A IT15132 --0.1 --1.0 --10 --0.1 IDP= --90A ID= --30A 100 μs 1ms 10ms100ms DC operation Operation in this area is limited by RDS(on). --1.023 5 7 2 --1035 7 2 3 7 5 10μs --100 20 40 60 80 100 140 120 160 PW≤10μs Tc=25°C Single pulse

No.A1597-5/7 Taping Specifi cation ATP106-TL-H

No.A1597-6/7 Outline Drawing Land Pattern Example ATP106-TL-H Mass (g) Unit 0.266 * For reference mm Unit: mm 6.5 6.71.6 2 2.3 2.3 1.5

PS No.A1597-7/7 This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.