ATP102

ATP102 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• Large current.
• Slim package.
• 4.5V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -40 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -120 A Allowable Power Dissipation P D Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 58 mJ Avalanche Current *2 I AV 20 A Note : *1 VDD=10V , L=200μH, IAV=20A *2 L≤200μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : ATP102 Continued on next page. 52709PA MS IM TC-00001968 SANYO Semiconductors DATA SHEET ATP102 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1479-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -20A 29 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -20A, VGS=- -10V 14 18.5 m Ω RDS(on)2 I D=- -10A, VGS=- -4.5V 22 31 m Ω Input Capacitance Ciss V DS=- -10V, f=1MHz 1490 pF Output Capacitance Coss V DS=- -10V, f=1MHz 360 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 270 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 11 ns Rise Time tr See speci fi ed Test Circuit. 135 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 135 ns Fall Time tf See specifi ed Test Circuit. 185 ns Total Gate Charge Qg V DS=- -15V, VGS=- -10V, ID=- -40A 34 nC Gate-to-Source Charge Qgs V DS=- -15V, VGS=- -10V, ID=- -40A 4.2 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -15V, VGS=- -10V, ID=- -40A 11.5 nC Diode Forward Voltage VSD IS=- -40A, VGS=0V - -0.99 - -1.5 V Package Dimensions unit : mm (typ) 7057-001 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPA K 0.7 0.4 0.55 9.5 7.3 0.51.7 4.6 6.05 6.5 0.6 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --20A RL=0.75Ω VDD= --15V VOUT VIN --10V VIN ATP102

No. A1479-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14690 IT14687 --60 --40 --20 160 1000 100 IT14694 IT14692IT14691 --0.1 --1.023 5 7 --0.001 --0.01 --0.1 --1.0 --10 --100 1.0 2 --1035 7 --1005723 0 20 40 60 80 100 120 140 °CTc= --25 --25 Tc=75 Single pulse Tc= --25 25°C 75°C Tc=75 --25 Ciss Crss IT14693 100 td(off) VDD= --15V VGS= --10V f=1MHz tr --5 --10 --40 --35 --25 --30 --15 --20 --5 --10 --50 --35 --40 --30 --25 --45 --20 --15 IT14689 IT14688 --4.0V VGS= --3.5V --16.0V VDS= --10V Single pulse tf VGS= --4.5V , I D= --10A VGS= --10V, ID= --20A --8.0V Coss td(on) --4.5V--6.0V --10.0V ID= --10A --20A VDS= --10V Single pulse Tc=25°C Single pulse VGS=0V Single pulse Tc=25°C Single pulse

No. A1479-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of May, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT10478 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT14695 0 5 10 25 20 35 3015 40 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 VDS= --15V ID= --40A IT14697 20 40 60 80 100 140 120 160 IDP= - -120A ID= - -40A 1ms 10ms100msDC operation Operation in this area is limited by R DS(on). 100μs 10μs IT14696 --0.1 --1.0 --10 --0.1 --1.023 5 7 2 --1035 7 2 35 --100 Tc=25°C Single pulse PW≤10μs