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Document overview
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- PDF pages: 20
Technical content
Features
High linearity performance Single Supply Enhancement Mode Technology[1] Very low noise fi gure Excellent uniformity in product specifi cations 400 micron gate width Low cost surface mount small plastic package SOT- 343 (4 lead SC-70) Tape-and-Reel packaging option available Lead Free Option Available Specifi cations 2 GHz; 2.7V, 10 mA (Typ.) 24.2 dBm output 3rd order intercept 14.4 dBm output power at 1 dB gain compression 0.6 dB noise fi gure 17.7 dB associated gain Lead-free option available
Applications
Low noise amplifi er for cellular/PCS handsets LNA for WLAN, WLL/RLL and MMDS applications General purpose discrete E -PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Pin Connections and Package Marking SOURCE DRAIN GATE SOURCE 5Fx Note: Top View. Package marking provides orientation and identifi cation “5F” = Device Code “x” = Date code character identifi es month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.
Symbol Parameter and Test Condition Units Min. Typ. [2] Max.
- Measurements obtained using production test board described in Figure 5.
- Typical values determined from a sample size of 500 parts from 6 wafers.
50 Ohm
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedd ed from actual measurements.
- F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 26. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 27. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 28. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 29. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 30. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 31. MSG/MAG and |S21|2 vs.
- F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on
calculated. Refer to the noise parameter application section for more information.
- S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. Figure 32. MSG/MAG and |S21|2 vs.
a nominal drain current of 10 mA. for various bias conditions are listed in this data sheet. standpoint of improving out-of-band rejection. Figure 33. Typical ATF-55143 LNA with Passive Biasing. vide a termination for low frequency mixing products. device threshold voltage, will drain current start to fl ow. diff erential between the gate and source terminals. available power supply voltage. VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current.
Figure 34. Typical ATF-55143 LNA with Active Biasing. tions that describe the circuit’s operation are as follows. eff ecting the operation of Q1. C7 is typically 0.1 μF.
NFET=yes PFET=no Vto=0.3 Beta=0.444 Lambda=72e-3 Alpha=13 Tau= Tnom=16.85 Idstc= Ucrit=-0.72 Vgexp=1.91 Gamds=1e-4 Vtotc= Betatce= Rgs=0.5 Ohm Rf= Gscap=2 Cgs=0.6193 pF Cgd=0.1435 pF Gdcap=2 Fc=0.65 Rgd=0.5 Ohm Rd=2.025 Ohm Rg=1.7 Ohm Rs=0.675 Ohm Ld= Lg=0.094 nH Ls= Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= Advanced_Curtice2_Model MESFETM1 GATE SOURCE Port G Num=1 C C=0.143 pF Port Num=2 SOURCE DRAIN Port Num=4 Port D Num=3 L L=0.205 nH R=0.001 C C=0.115 pF L L=0.778 nH R=0.001MSub TLINP TL4 Z=Z1 Ohm L=15 mil K=1 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 TLINP TL3 Z=Z2 Ohm L=25 mil K=K TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K VAR VAR1 K=5 Z2=85 Z1=30 Var Egn TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 L L=0.621 nH R=0.001 L L=0.238 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil
Figure 35. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters. cludes both the die and associated package model. comparison. This is shown schematically in Figure 35. Avago Technologies sales representative.
Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measure- ments while the F mins below 2 GHz have been extrapo- lated. The F min values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these measure- ments, a true F min is calculated. F min represents the true minimum noise fi gure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the refl ection coeffi cient The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise fi gure of the completed amplifi er is equal to the noise fi gure of the device plus the losses of the matching network preceding the device. The noise fi gure of the device is equal to F min only when the device is presented with o. If the refl ection coeffi cient of the matching network is other than o, then the noise fi g- ure of the device will be greater than F min based on the following equation. NF = Fmin + 4 Rn |s – o | 2 Where R n /Zo is the normalized noise resistance, o is the optimum refl ection coeffi cient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifi er noise fi gure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices. Typically for FETs, the higher o usually infers that an impedance much higher than 50Ω is required for the device to produce F min. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q compo- nents in order to minimize circuit losses. As an example at 900 MHz, when airwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise fi gure of the device. Using multilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typi- cal 0.15 dB F min of the device creating an amplifi er noise fi gure of nearly 0.65 dB. A discussion concerning cal- culated and measured circuit losses and their eff ect on amplifi er noise fi gure is covered in Avago Technologies Application 1085.
Ordering Information
Part Number No. of Devices Container ATF-55143-TR1G 3000 7” Reel ATF-55143-TR2G 10000 13”Reel ATF-55143-BLKG 100 antistatic bag Package Dimensions Outline 43 (SOT-343/SC70 lead) HE D A1b E 1.30 (.051) BSC 1.15 (.045) BSC CL A DIMENSIONS (mm) MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 SYMBOL E D HE A b c L NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. Recommended PCB Pad Layout for Avago's SC70 4L/SOT-343 Products 1.30 (0.051) 0.60 (0.024) 0.9 (0.035) Dimensions in mm (inches) 1.15 (0.045) 2.00 (0.079) 1.00 (0.039)
Tape Dimensions For Outline 4T For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3750EN AV02-0923EN - June 8, 2012 P Po P2 F W C D E Ao 10 MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 10 MAX. Bo Ko DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER Ao Bo Ko P 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D Po E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 COVER TAPE Device Orientation USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW 5Fx 5Fx5Fx5Fx