ATF-52189 | DigiCamel IC Datasheet

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ATF-52189 AVAGO | Alldatasheet

Document overview

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PDF pages: 19

Technical content

Features

Single voltage operation
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product specifications
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-2 and lead-free
Tape-and-Reel packaging option available Specifications 2 GH, 4.5V, 280 mA (Typ.)
42 dBm Output IP3
27 dBm Output Power at 1dB gain compression
1.50 dB Noise Figure
16.0 dB Gain
55% PAE at P1dB
LFOM [3] 12.5 dB

Applications

Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS
General purpose discrete E-pHEMT for other high linearity applications 2GX Top View RFin GND RFout #1 #2 #3 Bottom View RFout GND RFin #3 #2 #1

Description

Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a medium-power, high-linearity amplifier. Its operating fre- quency range is from 50 MHz to 6 GHz. ATF-52189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS applica - tion, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All de - vices are 100% RF and DC tested. Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data 3. Conform to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power Pin Connections and Package Marking

Symbol Parameter Units Maximum Vds Drain–Source Voltage[2] V7 Vgs Gate–Source Voltage[2] V -5 to 1.0 Vgd Gate Drain Voltage[2] V -5 to 1.0 Ids Drain Current[2] mA 500 Igs Gate Current mA 46 Pdiss Total Power Dissipation[3] W 1.5 Pin max. RF Input Power dBm +27 Tch Channel Temperature °C 150 Tstg Storage Temperature °C -65 to 150 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature T B is 25°C. Derate 19.25 mW/°C for TB > 72°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 200 mA V — 0.62 — Vth Threshold Voltage Vds = 4.5V, Ids = 16 mA V — 0.28 — Ids Drain to Source Current Vds = 4.5V, Vgs = 0V μA — 14.8 — Gm Transconductance Vds = 4.5V, Gm = ΔIds/ΔVgs; mmho — 1300 — ΔVgs = Vgs1 – Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V Igss Gate Leakage Current Vds = 0V, Vgs = -4V μA -20.0 0.49 — NF Noise Figure f = 2 GHz dB — 1.50 — f = 900 MHz dB — 1.25 — G Gain[1] f = 2 GHz dB 14.8 16.0 17.8 f = 900 MHz dB — 16.5 — OIP3 Output 3 rd Order Intercept Point[1] f = 2 GHz dBm 38.5 42.0 — f = 900 MHz dBm — 42.0 — P1dB Output 1dB Compressed [1] f = 2 GHz dBm 25.5 27.0 — f = 900 MHz dBm — 27.2 — PAE Power Added Efficiency f = 2 GHz % 40.0 55.0 — f = 900 MHz % — 50.0 — NF Noise Figure f=900 MHz dB — 1.25 — f=2.0 GHz dB — 1.50 — f=2.4 GHz dB — 1.60 — G Gain[1] f=900 MHz dB — 16.5 — f=2.0 GHz dB 14.8 16.0 17.8 f=2.4 GHz dB — 13.5 — OIP3 Output 3rd Order Intercept Point [1] f=900 MHz dBm — 42.0 — f=2.0 GHz dBm 38.5 42.0 — f=2.4 GHz dBm — 41.0 — P1dB Output 1dB Compressed [1] f=900 MHz dBm — 27.2 — f=2.0 GHz dBm 25.5 27.0 — f=2.4 GHz dBm — 26.0 Thermal Resistance[2,4] θch-b = 52°C/W continued on next page

Typical describes additional product performance information that is not covered by the product warranty.

Figure 6. Typical IV Curve.

F min values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have