ATF-36163 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Lead-free Option Available
  • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz
  • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz
  • Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz
  • Low Cost Surface Mount Small Plastic Package
  • Tape-and-Reel Packaging Option Available

Applications

  • 12 GHz DBS Downconverters
  • 4 GHz TVRO Downconverters
  • S or L Band Low Noise Amplifiers

Description

The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12 GHz and 0.6 dB at 4 GHz. Additionally, the ATF-36163 has low noise-resistance, which reduces the sensitivity of noise performance to variations in input impedance match. This feature makes the design of broad band low noise amplifiers much easier. The performance of the ATF-36163 makes this device the ideal choice for use in the 2nd or 3rd stage of low noise cascades. The repeatable per formance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) TV systems, C-band TV Receive Only (TVRO) LNAs, Multichannel Multipoint Distribution Systems (MMDS), X-band Radar detector and other low noise amplifiers operating in the 1.5 –18 GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride passivation assure rugged, reliable devices. Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking ATF-36163 Pin Conn DRAIN SOURCE 36x SOURCE SOURCE GATE SOURCE Note: Top View. Package marking provides orientation and identification. “ 36 “ = Device code “ x “ = Data code character ATF-36163 Pkg Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.

Symbol Parameter Units Maximum VDS Drain - Source Voltage V +3 VGS Gate - Source Voltage V -3 VGD Gate Drain Voltage V -3.5 ID Drain Current mA Idss PT Total Power Dissipation mW 180 Pin max RF Input Power dBm +10 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance: θch-c = 160°C/W Note: 1. Operation of this device above any one of these parameters may cause permanent damage. ATF-36163 Typical Parameters TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Typ. Fmin Minimum Noise Figure (Γsource = Γopt) f = 4 GHz dB 0.6 f = 12 GHz dB 1.0 Ga Associated Gain f = 4 GHz dB 15.8 f = 12 GHz dB 9.4 Gmax Maximum Available Gain[1] f = 4 GHz dB 17.2 f = 12 GHz dB 10.9 P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5 under the power matched condition f = 12 GHz dBm 5 VGS Gate to Source Voltage for IDS = 15 mA VDS = 2.0 V V -0.2 Note: 1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables. Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure[1] f =12.0 GHz dB 1.2 1.4[1] G Gain at NF[1] f = 12.0 GHz dB 9 10 gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 60 Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 40 Vp 10% Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15 BVGDO Gate Drain Breakdown Voltage IG = 30 µA V -3.5 Note: 1. Measured in a test circuit tuned for a typical device.

ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 0 V, VGS = 0 V Freq. S11 S21 S12 S22 ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2.0 V, VGS = -1.5 V Freq. S11 S21 S12 S22

D e b AA2 L c DIMENSIONS (mm) MIN. 1.15 1.80 1.80 0.80 0.80 0.00 0.10 0.15 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.30 0.20 0.30 SYMBOL E D HE A e b c L NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish.

0.650 BCS

Part Number Ordering Information No. of Part Number Devices Container ATF-36163-TR1G 3000 7” Reel ATF-36163-TR2G 10000 13” Reel ATF-36163-BLKG 100 antistatic bag

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-1915EN AV02-1441EN - July 29, 2008 Tape Dimensions and Product Orientation For Outline 63 Device Orientation ATF-36163 Device Orientation USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL ATF-36163 Tape – Device Orientation END VIEW 8 mm 4 mm TOP VIEW 36 36 36 36 P F W C D E 10° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 10° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER P 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 COVER TAPE