ATF-36077-TR1 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • PHEMT Technology
  • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz
  • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz
  • Low Parasitic Ceramic Microstrip Package
  • Tape-and-Reel Packing Option Available

Applications

  • 12 GHz DBS LNB (Low Noise Block)
  • 4 GHz TVRO LNB (Low Noise Block)
  • Ultra-Sensitive Low Noise Amplifiers Pin Configuration ATF-36077 fig 1 NOISE FIGURE (dB) FREQUENCY (GHz) 8 16 2 0 1.2 0.8 0.4 4 12 Ga ASSOCIATED GAIN (dB) NF [1] Note: 1. See Noise Parameter Table.

Description

Avago Technologies' ATF-36077 is an ultra-low-noise Pseudo- morphic High Electron Mobility Transistor (PHEMT), pack- aged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broad-cast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifiers operating in the 2-18 GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride pas - sivation assure rugged, reliable devices. Figure 1. ATF-36077 Optimum Noise Figure and Associated Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.

2 SOURCE

4 SOURCE

TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure[1] f = 12.0 GHz dB 0.5 0.6 GA Gain at NF[1] f = 12.0 GHz dB 11.0 12.0 gm Transconductance VDS = 1.5 V, VGS = 0 V mS 50 55 Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 45 Vp 10 % Pinch-off Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15 Note: 1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°. Absolute Symbol Parameter Units Maximum[1] VDS Drain – Source Voltage V +3 VGS Gate – Source Voltage V -3 VGD Gate-Drain Voltage V -3.5 ID Drain Current mA Idss PT Total Power Dissipation[3] mW 180 Pin max RF Input Power dBm +10 Tch Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 ATF-36077 Characterization Information, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test Conditions Units Typ. NF Noise Figure (Tuned Circuit) f = 4 GHz dB 0.3[2] f = 12 GHz dB 0.5 GA Gain at Noise Figure (Tuned Circuit) f = 4 GHz dB 17 f = 12 GHz dB 12 S12 off Reverse Isolation f = 12 GHz, VDS = 1.5 V , VGS = -2 V dB 14 P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5 f = 12 GHz dBm 5 VGS 10 mA Gate to Source Voltage for IDS = 10 mA VDS = 1.5 V V -0.2 Note: 2. See noise parameter table. Thermal Resistance[2,3]: θch-c = 60°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Measured at Pdiss = 15 mW and Tch = 100°C. 3. Derate at 16.7 mW/°C for TC > 139°C.

ATF-36077 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Freq. S11 S21 S12 S22 ATF-36077 Typical “Off ” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V Freq. S11 S21 S21 S22

  1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that

packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.

  1. For more information, see “Tape and Reel Packaging for Semiconduc-

tor Devices, ” in “Communications Components” Designer‘s Catalog. Figure 2. Maximum Available Gain, Maximum Stable Gain and Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA. Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).