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Technical content

Features

 Lead-free Option Available  Low Noise Figure  Excellent Uniformity in Product Specifi cations  Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70)  Tape-and-Reel Packaging Option Available Specifi cations 1.9 GHz; 2 V, 15 mA (Typ.)  0.4 dB Noise Figure  18 dB Associated Gain  11 dBm Output Power at 1 dB Gain Compression  21 dBm Output 3 rd Order Intercept

Applications

 Low Noise Amplifi er for Cellular/PCS Handsets  LNA for WLAN, WLL/RLL, LEO, and MMDS Applications  General Purpose Discrete PHEMT for Other Ultra Low Noise Applications

Description

Avago’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-35143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise fi gure with good intercept in the 450 MHz to 10 GHz frequency range. Other PHEMT devices in this family are the ATF-34143 and the ATF-33143. The typical specifi cations for these devices at 2 GHz are shown in the table below: Surface Mount Package SOT-343 Pin Connections and Package Marking Part No. Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm) ATF-33143 1600 μ 4 V, 80 mA 0.5 15.0 33.5 ATF-34143 800 μ 4 V, 60 mA 0.5 17.5 31.5 ATF-35143 400 μ 2 V, 15 mA 0.4 18.0 21.0 SOURCE DRAIN GATE SOURCE 5Px Note: Top View. Package marking provides orientation and identifi cation. “5P” = Device code “x” = Date code character. A new character is assigned for each month, year. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements.

50 Ohm

Symbol Parameters and Test Conditions Units Min. Typ. [2] Max.

  1. Guaranteed at wafer probe level
  2. Typical value determined from a sample size of 450 parts from 9 wafers.
  3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
  4. Measurements obtained using production test board described in Figure 5.
  1. Measurements made on a fi xed tuned production test board that was tuned for optimal gain match with reasonable noise fi gure at 2 V 15 mA

board requirements. Circuit losses have been de-embedded from actual measurements.

  1. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain

Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.[1,2] Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.[1,2] Figure 8. NF and Ga vs. Bias at 2 GHz.[1] Figure 9. NF and Ga vs. Bias at 900 MHz.[1] Figure 10. P1dB vs. Bias (Active Bias)

4 V IDS (mA)

Figure 11. P1dB vs. Bias (Active Bias)

Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

Fmin is calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.

  1. F min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on

calculated. Refer to the noise parameter application section for more information.

  1. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end

diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise fi gure measurements made at 16 diff erent impedances using an ATN NP5 test system. From these measurements, a true F min is calculated. F min represents the true minimum noise fi gure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the refl ection coeffi cient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise fi gure of the completed amplifi er is equal to the noise fi gure of the device plus the losses of the matching network preceding the device. The noise fi gure of the device is equal to F min only when the device is presented with o. If the refl ection coeffi cient of the matching network is other than o, then the noise fi gure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s – o | 2 Where R n /Zo is the normalized noise resistance, o is the optimum refl ection coeffi cient required to produce Fmin and s is the refl ection coeffi cient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise fi gure of the device creating a higher amplifi er noise fi gure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss.  o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower  o as compared to narrower gate width devices. Typically for FETs, the higher o usually infers that an impedance much higher than 50Ω is required for the device to produce F min. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at

900 MHz, when airwwound coils (Q > 100) are used for

matching networks, the loss can still be up to 0.25 dB which will add directly to the noise fi gure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB F min of the device creating an amplifi er noise fi gure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their eff ect on amplifi er noise fi gure is covered in Avago Application 1085.

L=Lc L=Lb R=Rb L=Lb R=Rb L C C=Ca CC=Cb LOSSYL L=Lb R=Rb L=La*.5 L=Ld L L LOSSYL GATE_IN SOURCE DRAIN_OUT REQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF R=0.1 OH LOSSYL L=La L=Lb R=Rb L LOSSYL L=Lb R=Rb LOSSYL G S D SOURCE ATF-35143 SC-70 4 Lead, High Frequency Model Optimized for 0.1 – 6.0 GHz This model can be used as a design tool. It has been tested on MDS for various specifi cations. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Avago reserves the right to change these models without prior notice. NFETMESFET G MODEL=FET W=400 μm XX D XX S SXX NFET=yes PFET= IDSMOD=3 VTO=–0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7 IDS model DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF Gate model RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc Parasitics GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= EG= Breakdown FNC=01e+6 R=.17 P=.65 C=.2 Noise Model scal factors (W=FET width in microns) EQUATION Cds=0.01 *W/200 EQUATION Beta=0.06 *W/200 EQUATION Rd=200/W EQUATION Rs=.5 *200/W EQUATION Cgs=0.2 *W/200 EQUATION Cgd=0.04 *W/200 EQUATION Lg=0.03 *200/W EQUATION Ld=0.03 *200/W EQUATION Ls=0.01 *200/W EQUATION Rc=500 *200/W * STATZ MESFET MODEL *MODEL = FET ATF-35143 Die Model

Part Number Ordering Information No. of Part Number Devices Container ATF-35143-TR1G 3000 7” Reel ATF-35143-TR2G 10000 13” Reel ATF-35143-BLKG 100 antistatic bag HE D A1b E 1.30 (.051) BSC 1.15 (.045) BSC CL A DIMENSIONS (mm) MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 SYMBOL E D HE A b c L NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. Recommended PCB Pad Layout for Avago’ s SC70 4L/SOT-343 Products 1.30 0.051 0.60 0.024 0.9 0.035 Dimensions in mm inches 1.15 0.045 2.00 0.079 1.00 0.039

Tape Dimensions and Product Orientation For Outline 4T P F W C D E 10° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 10° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 COVER TAPE For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN AV02-1416EN - June 8, 2012 Device Orientation USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW 5PX 5PX 5PX 5PX