ATA2526 ATMEL | Alldatasheet

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Technical content

Features

  • No External Components Except PIN Diode  Supply-voltage Range: 2.7V to 5.5V  High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC)  Automatic Supply Voltage Adaptation  High Immunity against Disturbances from Daylight and Lamps  Small Size and Innovative Pad Layout  Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; adjusted by Zener-Diode Fusing ±2.5%  TTL and CMOS Compatible

Applications

 Home Entertainment Applications  Home Appliances  Remote Control Equipment 1. Description The IC ATA2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-m odulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innov ative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (stan- dard, lamp, short burst) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the ATA2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplif ier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f 0 which is equivalent to the chosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envel ope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. Low-voltage IR Receiver ASSP ATA2526 4905D–AUTO–10/06

4905D–AUTO–10/06 ATA2526 Figure 1-1. Block Diagram DemodulatorInput GND ATA2526 Carrier frequency f 0 Modulated IR signal min 6 or 10 pulses OUT VS Oscillator AGC/ATC and digital control CGA and filter Micro- controller IN

4905D–AUTO–10/06 ATA2526 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Value Unit Supply voltage V S –0.3 to +6 V Supply current I S 3m A Input voltage V IN –0.3 to VS V Input DC current at VS = 5V I IN 0.75 mA Output voltage V O –0.3 to VS V Output current I O 10 mA Operating temperature T amb –25 to +85 °C Storage temperature T stg –40 to +125 °C Power dissipation at Tamb = 25°C P tot 30 mW 3. Thermal Resistance Parameters Symbol Value Unit Junction ambient TSSOP8 R thJA 110 K/W 4. Electrical Characteristics, 3-V Operation Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. Parameters Test Conditions Pi n Symbol Min. Typ. Max. Unit Type*

1 Supply

1.1 Supply-voltage range 1 V S 2.7 3.0 3.3 V C 1.2 Supply current I IN =0 1 I S 0.7 0.9 1.3 mA B

2 Output

2.1 Internal pull-up resistor Tamb = 25°C

See Figure 6-10 on page 10 1, 3 R PU 40 k Ω A 2.2 Output voltage low R2 = 1.4 kΩ See Figure 6-10 on page 10 3, 6 V OL 250 mV B 2.3 Output voltage high 3, 1 V OH VS – 0.25 V S VB

2.4 Output current clamping R2 = 0

See Figure 6-10 on page 10 3, 6 I OCL 8m A B

3 Input

3.1 Input DC current VIN = 0

See Figure 6-10 on page 10 5I IN_DCMAX –150 µA C

3.2 Input DC current

VIN = 0; VS = 3V Tamb = 25°C 5I IN_DCMAX –350 µA B *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 2. After transformation of input current into voltage

4905D–AUTO–10/06 ATA2526 3.3 Minimum detection threshold current See Figure 6-1 on page 7 Test signal: See Figure 6-9 on page 10 V S = 3V Tamb= 25°C, IIN_DC=1 µA square pp burst N = 16 f = f 0; tPER = 10 ms Figure 6-8 on page 9 BER = 50(1) 3I Eemin –800 pA B 3.4 Minimum detection threshold current with AC current disturbance IIN_AC100 = 3 µA at 100 Hz

3 IEemin –1600 pA C

3.5 Maximum detection threshold current with VIN > 0V Test signal: See Figure 6-9 on page 10 VS = 3V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f 0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1) 3I Eemax –200 µA D

4 Controlled Amplifier and Filter

4.1 Maximum value of

variable gain (CGA) VS = 3V, Tamb = 25°C GVARMAX 50 dB D

4.2 Minimum value of variable

gain (CGA) VS = 3V, Tamb = 25°C GVARMIN –6 dB D

4.3 Total internal

amplification(2) VS = 3V, Tamb = 25°C GMAX 72 dB D

4.4 Center frequency fusing

accuracy of bandpass VS = 3V, Tamb = 25°C f 03V_FUSE –2.5 f 0 +2.5 % A

4.5 Overall accuracy center

frequency of bandpass f03V –5.5 f0 +3.5 % C

4.6 Overall accuracy center

Tamb = 0 to 70°C f03V –4.5 f0 +3.0 % C

4.7 BPF bandwidth –3 dB; f0 = 38 kHz;

See Figure 6-7 on page 9 B 3.8 kHz C 4. Electrical Characteristics, 3-V Operation (Continued) Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. Parameters Test Conditions Pi n Symbol Min. Typ. Max. Unit Type* *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 2. After transformation of input current into voltage

4905D–AUTO–10/06 ATA2526 5. Electrical Characteristics, 5-V Operation Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. Parameters Test Conditions Pi n Symbol Min. Typ. Max. Unit Type*

5 Supply

5.1 Supply-voltage range 1 V S 4.5 5.0 5.5 V C 5.2 Supply current I IN =0 1 I S 0.9 1.2 1.6 mA B

6 Output

6.1 Internal pull-up resistor

Tamb = 25°C See Figure 6-10 on page 1, 3 R PU 40 kW A

6.2 Output voltage low

R2 = 2.4 kΩ See Figure 6-10 on page 3, 6 V OL 250 mV B 6.3 Output voltage high 3, 1 V OH VS – 0.25 V S VB

6.4 Output current clamping

R2 = 0 See Figure 6-10 on page 3, 6 I OCL 8m A B

7 Input

7.1 Input DC current

VIN = 0 See Figure 6-10 on page 5I IN_DCMAX –400 µA C

7.2 Input DC-current

VIN = 0; VS = 5V Tamb = 25°C 5I IN_DCMAX –700 µA B 7.3 Min. detection threshold current See Figure 6-2 on page 7 Test signal: See Figure 6-9 on page VS = 5V Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f 0; tPER = 10 ms Figure 6-8 on page 9 BER = 50(1) 3I Eemin –1000 pA B 7.4 Min. detection threshold current with AC current disturbance IIN_AC100 = 3 µA at 100 Hz

3 IEemin –2500 pA C

7.5 Max. detection threshold current with V IN > 0V Test signal: See Figure 6-9 on page VS = 5V, Tamb = 25°C IIN_DC =1µ A square pp burst N = 16 f = f 0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1)

3 IEemax –500 µA D

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 2. After transformation of input current into voltage

4905D–AUTO–10/06 ATA2526

5.1 Reliability

8 Controlled Amplifier and Filter

8.1 Maximum value of

variable gain (CGA) VS = 5V, Tamb = 25°C GVARMAX 50 dB D

8.2 Minimum value of variable

gain (CGA) VS = 5V, Tamb = 25°C GVARMIN –6 dB D

8.3 Total internal

amplification(2) VS = 5V, Tamb = 25°C G MAX 72 dB D 8.4 Resulting center frequency fusing accuracy f0 fused at VS = 3V VS = 5V, Tamb = 25°C f05V f03V-FUSE + 0.5 %C 5. Electrical Characteristics, 5-V Operation (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. Parameters Test Conditions Pi n Symbol Min. Typ. Max. Unit Type* *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 2. After transformation of input current into voltage

4905D–AUTO–10/06 ATA2526 7. Chip Dimensions Figure 7-1. Chip Size in µm Note: Pad coordinates are given for lower left co rner of the pad in µm from the origin 0,0 Note: 1. Value depends on manufacture location. Dimensions Length inclusive scribe 1.04 mm Width inclusive scribe 1.20 mm Thickness 290 µ ± 5% Pads 80 µ × 80 µ Fusing pads 60 µ × 60 µ Pad metallurgy Material AlCu/AlSiTi(1) Thickness 0.8 µm Finish Material Si3N4/SiO2 Thickness 0.7/0.3 µm 0,0 1080,960 scribe width length ATA2526 OUT Versioning 393,839 225,496 48,73 666,828 Zapping IN VS GND

4905D–AUTO–10/06 ATA2526 Notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56kHz) 2. Maximum data transmission rate up to bits/s with f 0 = 56kHz, VS = 5V (see Figure 6-6 on page 8)

8.1 Pad Layout

Figure 8-1. Pad Layout 8. Ordering Information Delivery: unsawn wafers (DDW) in box Extended Type Number D (2) Type ATA2526P1xx(1)-DDW 2175 Standard type: ≥ 10 pulses, high data rate ATA2526P3xx(1)-DDW 1400 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission ATA2526P7xx(1)-DDW 3415 Short burst type: ≥ 6 pulses, highest data rate Table 8-1. Pin Description SYMBOL FUNCTION OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f 0 adjust Versioning type adjust GND IN OUT ZappingVS ATA2526 Pad layout Versioning

4905D–AUTO–10/06 ATA2526 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4905D-AUTO-10/06

  • Features on page 1 changed
  • Applications on page 1 changed
  • Section 1 “Description” on page 1 changed
  • Section 2 “Pin Configuration” on page 2 changed
  • Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on pages 3 to 4 changed
  • Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page 5 to 6 changed
  • Section 6.1 “ESD” on page 6 deleted
  • Figure 7-10 “Application Circuit” on page 10 changed
  • Section 9 “Ordering Information” on page 12 changed
  • Rename Figure 9-1 on page 12 4905C-AUTO-04/06 • Section 9 “Ordering Information” on page 12 changed 4905B-AUTO-04/06 • Put datasheet in a new template
  • Section 8 “Chip Dimensions” on page 11 changed

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