AT68166F ATMEL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 17
Technical content
Features
- 16 Mbit SRAM Multi Chip Module
- Allows 32-, 16- or 8-bit access configuration
- Operating Voltage: 3.3V + 0.3V
- Access Time – 20 ns, 18 ns for AT68166F – <18 ns for AT68166G (in development prototypes in Q4 2007)
- Power Consumption – Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns (1) – Standby: 13 mW (Typ)
- Military Temperature Range: -55 to +125 °C
- TTL-Compatible Inputs and Outputs
- Asynchronous
- Die manufactured on Atmel 0.25 µm Radiation Hardened Process
- No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm 2
- Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
- ESD Better than 4000V
- Quality Grades: – QML-Q or V with SMD 5962-06229 – ESCC
- 950 Mils Wide MQFP 68 Package
- Mass : 8.5 grams Note: 1. Only for AT68166F-18. 450mW for AT68166F-20.
Description
The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166F/G MCM incorporates four 4Mbit AT60142F T SRAM dice. It can be organized as either one bank of 512Kx8, two banks o f 512Kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch- up threshold of 80MeV.cm²/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM packaging technology allows a reduction of the PCB area by 50% with a weight savings of 75% compared to four 4Mbit packages. Thanks to the small size of the 4Mbit SRAM die, Atm el has been able to accommo- date the assembly of the four dice on one side of t he package which facilitates the power dissipation. The compatibility with other products allows design ers to easily migrate to the Atmel AT68166F/G memory. The AT68166F/G is powered at 3.3V. The AT68166F/G is processed according to the test m ethods of the latest revision of the MIL-PRF-38535 or the ESCC 9000. 7747A–AERO–07/07 Rad Hard
16 MegaBit
3.3V SRAM Multi- Chip Module AT68166F AT68166G
Figure 2. 512K x 8 Banks Block Diagram (AT60142F/G) – YM package where 3 pins are not connected.
Table 1. AT68166F/G pin assignment in YS package Notes: 1. In YM package leads 33, 34 and 68 are not c onnected.
1 I/O0[0] 18 VCC 35 I/O3[7] 52 VCC
2 I/O0[1] 19 A11 36 I/O3[6] 53 A10
3 I/O0[2] 20 A12 37 I/O3[5] 54 A9
4 I/O0[3] 21 A13 38 I/O3[4] 55 A8
5 I/O0[4] 22 A14 39 I/O3[3] 56 A7
6 I/O0[5] 23 A15 40 I/O3[2] 57 A6
7 I/O0[6] 24 A16 41 I/O3[1] 58 WE0
8 I/O0[7] 25 CS0 42 I/O3[0] 59 CS3
9 GND 26 OE 43 GND 60 GND
10 I/O1[0] 27 CS1 44 I/O2[7] 61 CS2
11 I/O1[1] 28 A17 45 I/O2[6] 62 A5
12 I/O1[2] 29 WE1 46 I/O2[5] 63 A4
13 I/O1[3] 30 WE2 47 I/O2[4] 64 A3
14 I/O1[4] 31 WE3 48 I/O2[3] 65 A2
15 I/O1[5] 32 A18 49 I/O2[2] 66 A1
16 I/O1[6] 33 GND 50 I/O2[1] 67 A0
17 I/O1[7] 34 VCC 51 I/O2[0] 68 VCC
Table 2. Pin Names Table 3. Truth Table (1) Note: 1. L=low, H=high, X= H or L, L=high impedance.
7747A–AERO–07/07 AT68166F/G
Electrical Characteristics
Absolute Maximum Ratings* Military Operating Range Recommended DC Operating Conditions Capacitance Note: 1. Guaranteed but not tested. 883D Method 3015.3) *NOTE: Stresses beyond those listed under "Absolute Maxi- mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional oper- ation of the device at these or any other condition s beyond those indicated in the operational sections of this specification is not implied. Exposure to abso lute maximum rating conditions for extended periods may affect device reliability. Operating Voltage Operating Temperature 3.3 + 0.3V -55 °C to + 125 °C Parameter Description Min Typ Max Unit Vcc Supply voltage 3 3.3 3.6 V GND Ground 0.0 0.0 0.0 V VIL Input low voltage GND - 0.3 0.0 0.8 V VIH Input high voltage 2.2 – V CC + 0.3 V Parameter Description Min Typ Max Unit Cin (1) (OE and Ax) Input capacitance – – 48 pF Cin (1) (CSx and WEx) Input capacitance – – 12 pF Cio (1) I/O capacitance – – 12 pF
7747A–AERO–07/07 AT68166F/G DC Parameters Notes: 1. GND < V IN < V CC , GND < V OUT < V CC Output Disabled. 2. V CC min. I OL = 8 mA 3. V CC min. IOH = -4 mA Consumption Notes: 1. All CSx >VIH 2. All CSx > VCC - 0.3V 3. F = 1/ TAVAV , I out = 0 mA, WEx = OE = V IH , V IN = GND/V CC , V CC max. 4. F = 1/ TAVAW , I out = 0 mA, WE x = V IL , OE = V IH , V IN = GND/V CC , V CC max. Parameter Description Minimum Typical Maximum Unit IIX (1) Input leakage current -1 – 1 µ A IOZ (1) Output leakage current -1 – 1 µ A VOL (2) Output low voltage – – 0.4 V VOH (3) Output high voltage 2.4 – – V Symbol Description TAVAV/TAVAW Test Condition AT68166F-20 AT68166F-18 Unit Value ICCSB (1) Standby Supply Current – 10 7 mA max I CCSB1 (2) Standby Supply Current – 8 6 mA max I CCOP (3) Read per byte Dynamic Operating Current 18 ns 20 ns 50 ns 1 µs 170 170 165 mA max I CCOP (4) Write per byte Dynamic Operating Current 18 ns 20 ns 50 ns 1 µs 150 125 110 145 140 115 105 mA max
- During data retention chip select CSx must be held high within VCC to VCC -0.2V.
- Output Enable (OE ) should be held high to keep the RAM outputs high impedance, mini-
- During power-up and power-down transitions CSx and OE must be kept between VCC +
- The RAM can begin operation > t R ns after VCC reaches the minimum operation voltages
Figure 5. Data Retention Timing
- T AVAV = Read cycle time.
- All CSx = V CC , V IN = GND/V CC .
Figure 6. AC Test Loads Waveforms Table 4. Write cycle timings (1) Notes: 1. Timings figures applicable for 8-bit, 16-bi t and 32-bit mode.
- Parameters guaranteed, not tested, with output lo ading 5 pF. (See “AC Test Loads Waveforms” on page 9.)
Table 5. Read cycle timings (1) Notes: 1. Timings figures applicable for 8-bit, 16-bi t and 32-bit mode.
- Parameters guaranteed, not tested, with output lo ading 5 pF. (See “AC Test Loads Waveforms” on page 9.)
Figure 10. Read Cycle nb 1: Address Controlled (CS = OE = V IL , WE = V IH )
Figure 11. Read Cycle nb 2: Chip Select Controlled (WE = V IH )
Figure 14. 8-bit typical application (two SRAM banks)
7747A–AERO–07/07 AT68166F/G
Ordering Information
Note: 1. Will be replaced by SMD part number when ava ilable. Part Number Temperature Range Speed Package Flow AT68166F AT68166F-YM20-E 25 °C 20 ns MQFP68 Engineering Samples 5962-0622902QXC -55 ° to +125 °C 20 ns MQFP68 QML Q 5962-0622902VXC -55 ° to +125 °C 20 ns MQFP68 QML V 5962R0622902VXC -55 ° to +125 °C 20 ns MQFP68 QML V RHA AT68166F-YM20-SCC -55 ° to +125 °C 20 ns MQFP68 ESCC AT68166F-YS18-E 25 °C 18 ns MQFP68 Engineering Samples AT68166F-YS18-MQ (1) -55 ° to +125 °C 18 ns MQFP68 QML Q AT68166F-YS18-SV (1) -55 ° to +125 °C 18 ns MQFP68 QML V AT68166F-YS18-SR (1) -55 ° to +125 °C 18 ns MQFP68 QML V RHA AT68166F-YS18-SCC (1) -55 ° to +125 °C 18 ns MQFP68 ESCC
7747A–AERO–07/07 AT68166F/G Package Drawings 68-lead Quad Flat Pack (950 Mils) with non conductive tie bar Note: Lid is connected to Ground. Note: YM and YS package drawings are identical.
Printed on recycled paper. 7747A–AERO–07/07 ©2007 Atmel Corporation . All rights reserved. Atmel ®, logo and combinations thereof, and Everywhere You Are ® are the trademarks or regis- tered trademarks, of Atmel Corporation or its subsi diaries. Other terms and product names may be trade marks of others. Disclaimer: The information in this document is provided in co nnection with Atmel products. No license, express o r implied, by estoppel or otherwise, to any intellectual property right is granted by this docum ent or in connection with the sale of Atmel product s. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI- TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL AS SUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXP RESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NO T LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILI TY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATM EL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIA L, PUNITIVE, SPECIAL OR INCIDEN- TAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOS S OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUC H DAMAGES. Atmel makes no representations or warranties with respect to the ac curacy or completeness of the contents of this docu ment and reserves the right to make changes to spec ifications and product descriptions at any time without notice . Atmel does not make any commitment to update the information contained herein. Unless specifically p rovidedot- herwise, Atmel products are not suitable for, and s hall not be used in, automotive applications. Atmel ’sAtmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. Atmel Corporation Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza
77 Mody Road Tsimshatsui
Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Memory San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602
44306 Nantes Cedex 3, France
13106 Rousset Cedex, France
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 RF/Automotive Theresienstrasse 2 Postfach 3535
74025 Heilbronn, Germany
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123
38521 Saint-Egreve Cedex, France
www.atmel.com/literature