AT26DF081A-SU

AT26DF081A ATMEL | Alldatasheet

Document overview

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Technical content

Features

• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible – Supports SPI Modes 0 and 3
• 70 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture – 4-Kbyte Blocks – 32-Kbyte Blocks – 64-Kbyte Blocks – Full Chip Erase
• Optimized Physical Sectoring for Code Shadowing and Code + Data Storage

Applications

– One 32-Kbyte Top Boot Sector – Two 8-Kbyte Sectors – One 16-Kbyte Sector – Fifteen 64-Kbyte Sectors

• Individual Sector Protection for Program/Erase Protection
• Hardware Controlled Locking of Protected Sectors
• Flexible Programming Options – Byte/Page Program (1 to 256 Bytes) – Sequential Program Mode Capability
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation – 7 mA Active Read Current (Typical) – 11 µA Deep Power-down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options – 8-lead SOIC (150-mil and 200-mil wide)

Description

The AT26DF081A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26DF081A, with its erase granularity as small as

4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional

data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT26DF081A have been opti- mized to meet the needs of today’s code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows addi- tional code routines and data storage segments to be added while still maintaining the same overall device density. 8-megabit 2.7-volt Only Serial Firmware DataFlash® Memory AT26DF081A Preliminary 3600A–DFLASH–11/05

3600A–DFLASH–11/05 AT26DF081A [Preliminary] The AT26DF081A also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually pro- tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applica- tions where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. Specifically designed for use in 3-volt systems, the AT26DF081A supports read, program, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing. Pin Descriptions and Pinouts Table 2-1. Pin Descriptions Symbol Name and Function Asserted State Type CS CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in standby mode (not Deep Power-down mode), and the SO pin will be in a high-impedance state. When the device is deselected, data will not be accepted on the SI pin. A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation. Low Input SCK SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of data to and from the device. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the falling edge of SCK. Input SI SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input including command and address sequences. Data on the SI pin is always latched on the rising edge of SCK. Input SO SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on the falling edge of SCK. Output WP WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to section “Protection Commands and Features” on page 14 for more details on protection features and the WP pin. The WP pin is internally pulled-high and may be left floating if hardware-controlled protection will not be used. However, it is recommended that the WP pin also be externally connected to VCC whenever possible. Low Input HOLD HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the SI pin will be ignored, and the SO pin will be in a high-impedance state. The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold condition to start. A Hold condition pauses serial communication only and does not have an effect on internally self-timed operations such as a program or erase cycle. Please refer to section “Hold” on page 26 for additional details on the Hold operation. The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be used. However, it is recommended that the HOLD pin also be externally connected to VCC whenever possible. Low Input VCC DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device. Operations at invalid VCC voltages may produce spurious results and should not be attempted. Power GND GROUND: The ground reference for the power supply. GND should be connected to the system ground. Power

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Block Diagram Memory Array To provide the greatest flexibility, the memory array of the AT26DF081A can be erased in four levels of granularity including a full chip erase. In addition, the array has been divided into phys- ical sectors of various sizes, of which each sector can be individually protected from program and erase operations. The sizes of the physical sectors are optimized for both code and data storage applications, allowing both code and data segments to reside in their own isolated regions. The Figure 4-1 on page 4 illustrates the breakdown of each erase level as well as the breakdown of each physical sector. Figure 2-1. 8-SOIC Top View CS SO WP GND VCC HOLD SCK SI FLASH MEMORY ARRAY Y-GATING CS SCK SO SI Y-DECODER ADDRESS LATCH X-DECODER I/O BUFFERS AND LATCHES CONTROL AND PROTECTION LOGIC SRAM DATA BUFFER WP INTERFACE CONTROL AND LOGIC

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Figure 4-1. Memory Architecture Diagram Internal Sectoring for 64KB 32KB 4KB 1-256 Byte Sector Protection Block Erase Block Erase Block Erase Page Program Function (D8h Command) (52h Command) (20h Command) (02h Command) 4KB 0FFFFFh – 0FF000h

256 Bytes

0FFFFFh – 0FFF00h 4KB 0FEFFFh – 0FE000h 0FFEFFh – 0FFE00h 4KB 0FDFFFh – 0FD000h 0FFDFFh – 0FFD00h 4KB 0FCFFFh – 0FC000h 0FFCFFh – 0FFC00h 4KB 0FBFFFh – 0FB000h 0FFBFFh – 0FFB00h 4KB 0FAFFFh – 0FA000h 0FFAFFh – 0FFA00h 4KB 0F9FFFh – 0F9000h 0FF9FFh – 0FF900h 4KB 0F8FFFh – 0F8000h 0FF8FFh – 0FF800h 4KB 0F7FFFh – 0F7000h 0FF7FFh – 0FF700h 4KB 0F6FFFh – 0F6000h 0FF6FFh – 0FF600h 4KB 0F5FFFh – 0F5000h 0FF5FFh – 0FF500h 4KB 0F4FFFh – 0F4000h 0FF4FFh – 0FF400h 4KB 0F3FFFh – 0F3000h 0FF3FFh – 0FF300h 4KB 0F2FFFh – 0F2000h 0FF2FFh – 0FF200h 4KB 0F1FFFh – 0F1000h 0FF1FFh – 0FF100h 4KB 0F0FFFh – 0F0000h 0FF0FFh – 0FF000h 4KB 0EFFFFh – 0EF000h 0FEFFFh – 0FEF00h 4KB 0EEFFFh – 0EE000h 0FEEFFh – 0FEE00h 4KB 0EDFFFh – 0ED000h 0FEDFFh – 0FED00h 4KB 0ECFFFh – 0EC000h 0FECFFh – 0FEC00h 4KB 0EBFFFh – 0EB000h 0FEBFFh – 0FEB00h 4KB 0EAFFFh – 0EA000h 0FEAFFh – 0FEA00h 4KB 0E9FFFh – 0E9000h 0FE9FFh – 0FE900h 4KB 0E8FFFh – 0E8000h 0FE8FFh – 0FE800h 4KB 0E7FFFh – 0E7000h 4KB 0E6FFFh – 0E6000h 4KB 0E5FFFh – 0E5000h 4KB 0E4FFFh – 0E4000h 0017FFh – 001700h 4KB 0E3FFFh – 0E3000h 0016FFh – 001600h 4KB 0E2FFFh – 0E2000h 0015FFh – 001500h 4KB 0E1FFFh – 0E1000h 0014FFh – 001400h 4KB 0E0FFFh – 0E0000h 0013FFh – 001300h 0012FFh – 001200h 0011FFh – 001100h 0010FFh – 001000h 4KB 00FFFFh – 00F000h 000FFFh – 000F00h 4KB 00EFFFh – 00E000h 000EFFh – 000E00h 4KB 00DFFFh – 00D000h 000DFFh – 000D00h 4KB 00CFFFh – 00C000h 000CFFh – 000C00h 4KB 00BFFFh – 00B000h 000BFFh – 000B00h 4KB 00AFFFh – 00A000h 000AFFh – 000A00h 4KB 009FFFh – 009000h 0009FFh – 000900h 4KB 008FFFh – 008000h 0008FFh – 000800h 4KB 007FFFh – 007000h 0007FFh – 000700h 4KB 006FFFh – 006000h 0006FFh – 000600h 4KB 005FFFh – 005000h 0005FFh – 000500h 4KB 004FFFh – 004000h 0004FFh – 000400h 4KB 003FFFh – 003000h 0003FFh – 000300h 4KB 002FFFh – 002000h 0002FFh – 000200h 4KB 001FFFh – 001000h 0001FFh – 000100h 4KB 000FFFh – 000000h 0000FFh – 000000h

• • • 64KB Block Erase Detail Page Program Detail Page Address Block Address 32KB 32KB 64KB (Sector 0) Range
• • •
• • • Range 32KB 32KB
• • •
• • • 32KB (Sector 18) 8KB (Sector 17) 8KB (Sector 16) 16KB (Sector 15) 64KB 32KB 32KB 64KB (Sector 14) 64KB

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Device Operation The AT26DF081A is controlled by a set of instructions that are sent from a host controller, com- monly referred to as the SPI Master. The SPI Master communicates with the AT26DF081A via the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Clock (SCK), Serial Input (SI), and Serial Output (SO). The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode differing in respect to the SCK polarity and phase and how the polarity and phase control the flow of data on the SPI bus. The AT26DF081A supports the two most common modes, SPI modes 0 and 3. The only difference between SPI modes 0 and 3 is the polarity of the SCK signal when in the inactive state (when the SPI Master is in standby mode and not transferring any data). With SPI modes 0 and 3, data is always latched in on the rising edge of SCK and always output on the falling edge of SCK. Figure 5-1. SPI Mode 0 and 3 Commands and Addressing A valid instruction or operation must always be started by first asserting the CS pin. After the CS pin has been asserted, the SPI Master must then clock out a valid 8-bit opcode on the SPI bus. Following the opcode, instruction dependent information such as address and data bytes would then be clocked out by the SPI Master. All opcode, address, and data bytes are transferred with the most significant bit (MSB) first. An operation is ended by deasserting the CS pin. Opcodes not supported by the AT26DF081A will be ignored by the device and no operation will be started. The device will continue to ignore any data presented on the SI pin until the start of the next operation (CS pin being deasserted and then reasserted). In addition, if the CS pin is deasserted before complete opcode and address information is sent to the device, then no oper- ation will be performed and the device will simply return to the idle state and wait for the next operation. Addressing of the device requires a total of three bytes of information to be sent, representing address bits A23 - A0. Since the upper address limit of the AT26DF081A memory array is 0FFFFFh, address bits A23 - A20 are always ignored by the device. SCK CS SI SO MSB LSB MSB LSB

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Note: 1. Three address bytes are only required for the first operation to designate the address to start programming at. Afterwards, the internal address counter automatically increments, so subsequent Sequential Program Mode operations only require clocking in of the opcode and the data byte until the Sequential Program Mode has been exited. Table 6-1. Command Listing Command Opcode Address Bytes Dummy Bytes Data Bytes Read Commands Read Array 0Bh 0000 1011 Read Array (Low Frequency) 03h 0000 0011 Program and Erase Commands Block Erase (4 Kbytes) 20h 0010 0000 Block Erase (32 Kbytes) 52h 0101 0010 Block Erase (64 Kbytes) D8h 1101 1000 Chip Erase 60h 0110 0000 C7h 1100 0111 Byte/Page Program (1 to 256 Bytes) 02h 0000 0010 Sequential Program Mode ADh 1010 1101 3, 0(1) AFh 1010 1111 3, 0(1) Protection Commands Write Enable 06h 0000 0110 Write Disable 04h 0000 0100 Protect Sector 36h 0011 0110 Unprotect Sector 39h 0011 1001 Read Sector Protection Registers 3Ch 0011 1100 Status Register Commands Read Status Register 05h 0000 0101 Write Status Register 01h 0000 0001 Miscellaneous Commands Read Manufacturer and Device ID 9Fh 1001 1111 1 to 4 Deep Power-down B9h 1011 1001 Resume from Deep Power-down ABh 1010 1011

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Program and Erase Commands 8.1 Byte/Page Program The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of data to be programmed into previously erased memory locations. An erased memory location is one that has all eight bits set to the logical “1” state (a byte value of FFh). Before a Byte/Page Program command can be started, the Write Enable command must have been previously issued to the device (see “Write Enable” on page 14 command description) to set the Write Enable Latch (WEL) bit of the Status Register to a logical “1” state. To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device followed by the three address bytes denoting the first byte location of the memory array to begin programming at. After the address bytes have been clocked in, data can then be clocked into the device and will be stored in an internal buffer. If the starting memory address denoted by A23 - A0 does not fall on an even 256-byte page boundary (A7 - A0 are not all 0’s), then special circumstances regarding which memory locations will be programmed will apply. In this situation, any data that is sent to the device that goes beyond the end of the page will wrap around back to the beginning of the same page. For exam- ple, if the starting address denoted by A23 - A0 is 0000FEh, and three bytes of data are sent to the device, then the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh while the last byte of data will be programmed at address 000000h. The remaining bytes in the page (addresses 000001h through 0000FDh) will be unaffected and will not change. In addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes sent will be latched into the internal buffer. When the CS pin is deasserted, the device will take the data stored in the internal buffer and pro- gram it into the appropriate memory array locations based on the starting address specified by A23 - A0 and the number of data bytes sent to the device. If less than 256 bytes of data were sent to the device, then the remaining bytes within the page will not be altered. The program- ming of the data bytes is internally self-timed and should take place in a time of tPP. The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation and no data will be pro- grammed into the memory array. In addition, if the address specified by A23 - A0 points to a memory location within a sector that is in the protected state (see section “Protect Sector” on page 15), then the Byte/Page Program command will not be executed, and the device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of data being sent, or because the memory location to be programmed is protected. While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tPP time to determine if the data bytes have finished programming. At some point before the program cycle completes, the WEL bit in the Status Register will be reset back to the logical “0” state.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] To start the Sequential Program Mode, the CS pin must first be asserted, and either an opcode of ADh or AFh must be clocked into the device. For the first program cycle, three address bytes must be clocked in after the opcode to designate the first byte location to program. After the address bytes have been clocked in, the byte of data to be programmed can be sent to the device. Deasserting the CS pin will start the internally self-timed program operation, and the byte of data will be programmed into the memory location specified by A23 - A0. After the first byte has been successfully programmed, a second byte can be programmed by simply reasserting the CS pin, clocking in the ADh or AFh opcode, and then clocking in the next byte of data. When the CS pin is deasserted, the second byte of data will be programmed into the next sequential memory location. The process would be repeated for any additional bytes. There is no need to reissue the Write Enable command once the Sequential Program Mode has been entered. When the last desired byte has been programmed into the memory array, the Sequential Program Mode operation can be terminated by reasserting the CS pin and sending the Write Disable command to the device to reset the WEL bit in the Status Register back to the logical “0” state. If more than one byte of data is ever clocked in during each program cycle, then only the last byte of data sent on the SI pin will be stored in the internal latches. The programming of each byte is internally self-timed and should take place in a time of tBP. For each program cycle, a complete byte of data must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation, the byte of data will not be programmed into the memory array, and the WEL bit in the Status Register will be reset back to the logical “0” state. If the address initially specified by A23 - A0 points to a memory location within a sector that is in the protected state, then the Sequential Program Mode command will not be executed, and the device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Sta- tus Register will also be reset back to the logical “0” state. There is no address wrapping when using the Sequential Program Mode. Therefore, when the last byte (0FFFFFh) of the memory array has been programmed, the device will automatically exit the Sequential Program mode and reset the WEL bit in the Status Register back to the logi- cal “0” state. In addition, the Sequential Program mode will not automatically skip over protected sectors; therefore, once the highest unprotected memory location in a programming sequence has been programmed, the device will automatically exit the Sequential Program mode and reset the WEL bit in the Status Register. For example, if Sector 1 was protected and Sector 0 was currently being programmed, once the last byte of Sector 0 was programmed, the Sequen- tial Program mode would automatically end. To continue programming with Sector 2, the Sequential Program mode would have to be restarted by supplying the ADh or AFh opcode, the three address bytes, and the first byte of Sector 2 to program. While the device is programming a byte, the Status Register can be read and will indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled at the end of each program cycle rather than waiting the tBP time to determine if the byte has fin- ished programming before starting the next Sequential Program mode cycle. The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] If the address specified by A23 - A0 points to a memory location within a sector that is in the pro- tected state, then the Block Erase command will not be executed, and the device will return to the idle state once the CS pin has been deasserted. In addition, with the larger Block Erase sizes of 32K and 64 Kbytes, more than one physical sector may be erased (e.g. sectors 18 through 15) at one time. Therefore, in order to erase a larger block that may span more than one sector, all of the sectors in the span must be in the unprotected state. If one of the physical sec- tors within the span is in the protected state, then the device will ignore the Block Erase command and will return to the idle state once the CS pin is deasserted. The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete address being sent or because a memory location within the region to be erased is protected. While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device is busy. For faster throughput, it is recommended that the Status Regis- ter be polled rather than waiting the tBLKE time to determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status Register will be reset back to the logical “0” state. The device also incorporates an intelligent erasing algorithm that can detect when a byte loca- tion fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status Register. Figure 8-5. Block Erase SCK CS SI SO MSB MSB C C C C C C C C 10 11 29 30 27 28 OPCODE A A A A A A A A A A A A ADDRESS BITS A23-A0 HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 8.4 Chip Erase The entire memory array can be erased in a single operation by using the Chip Erase command. Before a Chip Erase command can be started, the Write Enable command must have been pre- viously issued to the device to set the WEL bit of the Status Register to a logical “1” state. Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in device functionality when utilizing the two opcodes, so they can be used interchangeably. To perform a Chip Erase, one of the two opcodes (60h or C7h) must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the device will erase the entire memory array. The erasing of the device is internally self-timed and should take place in a time of tCHPE. The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no erase will be performed. In addition, if any sector of the memory array is in the protected state, then the Chip Erase command will not be executed, and the device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to the logical “0” state if a sector is in the protected state. While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device is busy. For faster throughput, it is recommended that the Status Regis- ter be polled rather than waiting the tCHPE time to determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status Register will be reset back to the logical “0” state. The device also incorporates an intelligent erasing algorithm that can detect when a byte loca- tion fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status Register. Figure 8-6. Chip Erase SCK CS SI SO MSB C C C C C C C C OPCODE HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Protection Commands and Features 9.1 Write Enable The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Regis- ter to a logical “1” state. The WEL bit must be set before a program, erase, Protect Sector, Unprotect Sector, or Write Status Register command can be executed. This makes the issuance of these commands a two step process, thereby reducing the chances of a command being accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to the issuance of one of these commands, then the command will not be executed. To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h must be clocked into the device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in the Status Register will be set to a logical “1”. The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not change. Figure 9-1. Write Enable 9.2 Write Disable The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Reg- ister to the logical “0” state. With the WEL bit reset, all program, erase, Protect Sector, Unprotect Sector, and Write Status Register commands will not be executed. The Write Disable command is also used to exit the Sequential Program Mode. Other conditions can also cause the WEL bit to be reset; for more details, refer to the WEL bit section of the Status Register description. To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h must be clocked into the device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in the Status Register will be reset to a logical “0”. The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not change. SCK CS SI SO MSB OPCODE HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Figure 9-2. Write Disable 9.3 Protect Sector Every physical sector of the device has a corresponding single-bit Sector Protection Register that is used to control the software protection of a sector. Upon device power-up or after a device reset, each Sector Protection Register will default to the logical “1” state indicating that all sectors are protected and cannot be programmed or erased. Issuing the Protect Sector command to a particular sector address will set the corresponding Sector Protection Register to the logical “1” state. The following table outlines the two states of the Sector Protection Registers. Before the Protect Sector command can be issued, the Write Enable command must have been previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the Protect Sector command, the CS pin must first be asserted and the opcode of 36h must be clocked into the device followed by three address bytes designating any address within the sector to be locked. Any additional data clocked into the device will be ignored. When the CS pin is deas- serted, the Sector Protection Register corresponding to the physical sector addressed by A23 - A0 will be set to the logical “1” state, and the sector itself will then be protected from program and erase operations. In addition, the WEL bit in the Status Register will be reset back to the logical “0” state. The complete three address bytes must be clocked into the device before the CS pin is deas- serted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation, the state of the Sector Protection Register will be unchanged, and the WEL bit in the Status Register will be reset to a logical “0”. As a safeguard against accidental or erroneous protecting or unprotecting of sectors, the Sector Protection Registers can themselves be locked from updates by using the SPRL (Sector Protec- tion Registers Locked) bit of the Status Register (please refer to the Status Register description for more details). If the Sector Protection Registers are locked, then any attempts to issue the Protect Sector command will be ignored, and the device will reset the WEL bit in the Status Reg- ister back to a logical “0” and return to the idle state once the CS pin has been deasserted. SCK CS SI SO MSB OPCODE HIGH-IMPEDANCE Table 9-1. Sector Protection Register Values Value Sector Protection Status Sector is unprotected and can be programmed and erased. Sector is protected and cannot be programmed or erased. This is the default state.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 9.5 Read Sector Protection Registers The Sector Protection Registers can be read to determine the current software protection status of each sector. Reading the Sector Protection Registers, however, will not determine the status of the WP pin. To read the Sector Protection Register for a particular sector, the CS pin must first be asserted and the opcode of 3Ch must be clocked in. Once the opcode has been clocked in, three address bytes designating any address within the sector must be clocked in. After the last address byte has been clocked in, the device will begin outputting data on the SO pin during every subse- quent clock cycle. The data being output will be a repeating byte of either FFh or 00h to denote the value of the appropriate Sector Protection Register. Deasserting the CS pin will terminate the read operation and put the SO pin into a high-imped- ance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read. In addition to reading the individual Sector Protection Registers, the Software Protection Status (SWP) bit in the Status Register can be read to determine if all, some, or none of the sectors are software protected (refer to the “Status Register Commands” on page 19 for more details). Figure 9-5. Read Sector Protection Register Table 9-2. Read Sector Protection Register – Output Data Output Data Sector Protection Register Value 00h Sector Protection Register value is 0 (sector is unprotected). FFh Sector Protection Register value is 1 (sector is protected). SCK CS SI SO MSB MSB 10 11 37 38 31 32 29 30 39 40 OPCODE A A A A A A A A A MSB MSB D D D D D D D D D D ADDRESS BITS A23-A0 DATA BYTE HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 9.6 Protected States and the Write Protect (WP) Pin The WP pin is not linked to the memory array itself and has no direct effect on the protection sta- tus of the memory array. Instead, the WP pin, in conjunction with the SPRL (Sector Protection Registers Locked) bit in the Status Register, is used to control the hardware locking mechanism of the device. For hardware locking to be active, two conditions must be met-the WP pin must be asserted and the SPRL bit must be in the logical “1” state. When hardware locking is active, the Sector Protection Registers are locked and the SPRL bit itself is also locked. Therefore, sectors that are protected will be locked in the protected state, and sectors that are unprotected will be locked in the unprotected state. These states cannot be changed as long as hardware locking is active, so the Protect Sector, Unprotect Sector, and Write Status Register commands will be ignored. In order to modify the protection status of a sector, the WP pin must first be deasserted, and the SPRL bit in the Status Register must be reset back to the logical “0” state. If the WP pin is permanently connected to GND, then once the SPRL bit is set to a logical “1”, the only way to reset the bit back to the logical “0” state is to power-cycle or reset the device. This allows a system to power-up with all sectors software protected but not hardware locked. Therefore, sectors can be unprotected and protected as needed and then hardware locked at a later time by simply setting the SPRL bit in the Status Register. When the WP pin is deasserted, or if the WP pin is permanently connected to VCC, the SPRL bit in the Status Register can still be set to a logical “1” to lock the Sector Protection Registers. This provides a software locking ability to prevent erroneous Protect Sector or Unprotect Sector com- mands from being processed. Tables 9-3 and 9-4 detail the various protection and locking states of the device. Note: 1. “n” represents a sector number Table 9-3. Software Protection WP Sector Protection Register n(1) Sector n(1) X (Don't Care) Unprotected Protected Table 9-4. Hardware and Software Locking WP SPRL Locking SPRL Sector Protection Registers Can be modified from 0 to 1 Unlocked and modifiable using the Protect and Unprotect Sector commands Hardware Locked Locked Locked in current state. Protect and Unprotect Sector commands will be ignored. Can be modified from 0 to 1 Unlocked and modifiable using the Protect and Unprotect Sector commands Software Locked Can be modified from 1 to 0 Locked in current state. Protect and Unprotect Sector commands will be ignored.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 10. Status Register Commands 10.1 Read Status Register The Status Register can be read to determine the device's ready/busy status, as well as the sta- tus of many other functions such as Hardware Locking and Software Protection. The Status Register can be read at any time, including during an internally self-timed program or erase operation. To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be clocked into the device. After the last bit of the opcode has been clocked in, the device will begin outputting Status Register data on the SO pin during every subsequent clock cycle. After the last bit (bit 0) of the Status Register has been clocked out, the sequence will repeat itself starting again with bit 7 as long as the CS pin remains asserted and the SCK pin is being pulsed. The data in the Status Register is constantly being updated, so each repeating sequence will output new data. Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read. Notes: 1. Bit 7 of the Status Register is the only bit that can be user modified. 2. R/W = Readable and writable R = Readable only Table 10-1. Status Register Format Bit(1) Name Type(2) Sector Protection Registers Locked R/W Sector Protection Registers are unlocked (default). Sector Protection Registers are locked. SPM Sequential Program Mode Status R Byte/Page Programming Mode (default). Sequential Programming Mode entered. EPE Erase/Program Error R Erase or program operation was successful (default). Erase or program error detected. WPP Write Protect (WP) Pin Status R WP is asserted. WP is deasserted. 3:2 SWP Software Protection Status R All sectors are software unprotected. Some sectors are software protected. Read Sector Protection Registers. Reserved for future use. All sectors are software protected (default). WEL Write Enable Latch Status R Device is not write enabled (default). Device is write enabled. RDY/BSY Ready/Busy Status R Device is ready. Device is busy with an internal operation.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 10.1.1 SPRL Bit The SPRL bit is used to control whether the Sector Protection Registers can be modified or not. When the SPRL bit is in the logical “1” state, all Sector Protection Registers are locked and can- not be modified with the Protect Sector and Unprotect Sector commands (the device will ignore these commands). Any sectors that are presently protected will remain protected, and any sec- tors that are presently unprotected will remain unprotected. When the SPRL bit is in the logical “0” state, all Sector Protection Registers are unlocked and can be modified (the Protect Sector and Unprotect Sector commands will be processed as nor- mal). The SPRL bit defaults to the logical “0” state after a power-up or a device reset. The SPRL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin is asserted, then the SPRL bit may only be changed from a logical “0” (Sector Protection Regis- ters are unlocked) to a logical “1” (Sector Protection Registers are locked). In order to reset the SPRL bit back to a logical “0” using the Write Status Register command, the WP pin will have to first be deasserted. The SPRL bit is the only bit of the Status Register than can be user modified via the Write Status Register command. 10.1.2 SPM Bit The SPM bit indicates whether the device is in the Byte/Page Program mode or the Sequential Program Mode. The default state after power-up or device reset is the Byte/Page Program mode. 10.1.3 EPE Bit The EPE bit indicates whether the last erase or program operation completed successfully or not. If at least one byte during the erase or program operation did not erase or program properly, then the EPE bit will be set to the logical “1” state. The EPE bit will not be set if an erase or pro- gram operation aborts for any reason such as an attempt to erase or program a protected region or if the WEL bit is not set prior to an erase or program operation. The EPE bit will be updated after every erase and program operation. 10.1.4 WPP Bit The WPP bit can be read to determine if the WP pin has been asserted or not. 10.1.5 SWP Bits The SWP bits provide feedback on the software protection status for the device. There are three possible combinations of the SWP bits that indicate whether none, some, or all of the sectors have been protected using the Protect Sector command. If the SWP bits indicate that some of the sectors have been protected, then the individual Sector Protection Registers can be read with the Read Sector Protection Registers command to determine which sectors are in fact protected.

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 10.1.6 WEL Bit The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is in the logical “0” state, the device will not accept any program, erase, Protect Sector, Unprotect Sector, or Write Status Register commands. The WEL bit defaults to the logical “0” state after a device power-up or reset. In addition, the WEL bit will be reset to the logical “0” state automati- cally under the following conditions:

• Write Disable operation completes successfully
• Write Status Register operation completes successfully or aborts
• Protect Sector operation completes successfully or aborts
• Unprotect Sector operation completes successfully or aborts
• Byte/Page Program operation completes successfully or aborts
• Sequential Program Mode reaches highest unprotected memory location
• Sequential Program Mode reaches the end of the memory array
• Sequential Program Mode aborts
• Block Erase operation completes successfully or aborts
• Chip Erase operation completes successfully or aborts
• Hold condition aborts If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts due to an incomplete or unrecognized opcode being clocked into the device before the CS pin is deasserted. In order for the WEL bit to be reset when an operation aborts prematurely, the entire opcode for a program, erase, Protect Sector, Unprotect Sector, or Write Status Register com- mand must have been clocked into the device. 10.1.7 RDY/BSY Bit The RDY/BSY bit is used to determine whether or not an internal operation, such as a program or erase, is in progress. To poll the RDY/BSY bit to detect the completion of a program or erase cycle, new Status Register data must be continually clocked out of the device until the state of the RDY/BSY bit changes from a logical “1” to a logical “0”. Figure 10-1. Read Status Register SCK CS SI SO MSB 10 11 21 22 15 16 13 14 23 24 OPCODE MSB MSB D D D D D D D D D D MSB D D D D D D D D STATUS REGISTER DATA STATUS REGISTER DATA HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 10.2 Write Status Register The Write Status Register command is used to modify the SPRL bit of the Status Register. Before the Write Status Register command can be issued, the Write Enable command must have been previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the Write Status Register command, the CS pin must first be asserted and the opcode of 01h must be clocked into the device. After the opcode has been clocked in, one byte of data comprised of the SPRL bit value and seven don't care bits must be clocked in. Any additional data bytes that are sent to the device will be ignored. When the CS pin is deasserted, the SPRL bit in the Status Register will be modified, and the WEL bit in the Status Register will be reset back to a logical “0”. The complete one byte of data must be clocked into the device before the CS pin is deasserted; otherwise, the device will abort the operation, the state of the SPRL bit will not change, and the WEL bit in the Status Register will be reset back to the logical “0” state. If the WP pin is asserted, then the SPRL bit can only be set to a logical “1”. If an attempt is made to reset the SPRL bit to a logical “0” while the WP pin is asserted, then the Write Status Register command will be ignored, and the WEL bit in the Status Register will be reset back to the logical “0” state. In order to reset the SPRL bit to a logical “0”, the WP pin must be deasserted. Figure 10-2. Write Status Register SCK CS SI SO MSB 10 11 14 15 OPCODE MSB D X X X X X X X STATUS REGISTER IN HIGH-IMPEDANCE

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 11. Other Commands and Functions 11.1 Read Manufacturer and Device ID Identification information can be read from the device to enable systems to electronically query and identify the device while it is in system. The identification method and the command opcode comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices”. The type of information that can be read from the device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the ven- dor specific Extended Device Information. To read the identification information, the CS pin must first be asserted and the opcode of 9Fh must be clocked into the device. After the opcode has been clocked in, the device will begin out- putting the identification data on the SO pin during the subsequent clock cycles. The first byte that will be output will be the Manufacturer ID followed by two bytes of Device ID information. The fourth byte output will be the Extended Device Information String Length, which will be 00h indicating that no Extended Device Information follows. After the Extended Device Information String Length byte is output, the SO pin will go into a high-impedance state; therefore, additional clock cycles will have no affect on the SO pin and no data will be output. As indicated in the JEDEC standard, reading the Extended Device Information String Length and any subsequent data is optional. Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read. Table 11-1. Manufacturer and Device ID Information Byte No. Data Type Value Manufacturer ID 1Fh Device ID (Part 1) 45h Device ID (Part 2) 01h Extended Device Information String Length 00h Table 11-2. Manufacturer and Device ID Details Data Type Bit 7 Bit 6 Bit 5 Bit 5 Bit 3 Bit 2 Bit 1 Bit 0 Hex Value Details Manufacturer ID JEDEC Assigned Code 1Fh JEDEC Code: 0001 1111 (1Fh for Atmel) Device ID (Part 1) Family Code Density Code 45h Family Code: 010 (AT26DFxxx series) Density Code: 00101 (8-Mbit) Device ID (Part 2) MLC Code Product Version Code 01h MLC Code: 000 (1-bit/cell technology) Product Version: 00001 (First major revision)

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Figure 11-1. Read Manufacturer and Device ID 11.2 Deep Power-down During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin remains deasserted and no internal operation is in progress. The Deep Power-down command offers the ability to place the device into an even lower power consump- tion state called the Deep Power-down mode. When the device is in the Deep Power-down mode, all commands including the Read Status Register command will be ignored with the exception of the Resume from Deep Power-down command. Since all commands will be ignored, the mode can be used as an extra protection mechanism against program and erase operations. Entering the Deep Power-down mode is accomplished by simply asserting the CS pin, clocking in the opcode of B9h, and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted, the device will enter the Deep Power-down mode within the maximum time of tEDPD. The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode once the CS pin is deasserted. In addition, the device will default to the standby mode after a power-cycle or a device reset. The Deep Power-down command will be ignored if an internally self-timed operation such as a program or erase cycle is in progress. The Deep Power-down command must be reissued after the internally self-timed operation has been completed in order for the device to enter the Deep Power-down mode. SCK CS SI SO 9Fh OPCODE 1Fh 45h 01h 00h MANUFACTURER ID DEVICE ID BYTE 1 DEVICE ID BYTE 2 EXTENDED DEVICE INFORMATION STRING LENGTH HIGH-IMPEDANCE Note: Each transition shown for SI and SO represents one byte (8 bits)

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 11.4 Hold The HOLD pin is used to pause the serial communication with the device without having to stop or reset the clock sequence. The Hold mode, however, does not have an affect on any internally self-timed operations such as a program or erase cycle. Therefore, if an erase cycle is in progress, asserting the HOLD pin will not pause the operation, and the erase cycle will continue until it is finished. The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated simply by asserting the HOLD pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse, then the Hold mode won't be started until the beginning of the next SCK low pulse. The device will remain in the Hold mode as long as the HOLD pin and CS pin are asserted. While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the SCK pin will be ignored. The WP pin, however, can still be asserted or deasserted while in the Hold mode. To end the Hold mode and resume serial communication, the HOLD pin must be deasserted during the SCK low pulse. If the HOLD pin is deasserted during the SCK high pulse, then the Hold mode won't end until the beginning of the next SCK low pulse. If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be aborted, and the device will reset the WEL bit in the Status Register back to the logical “0” state. Figure 11-4. Hold Mode SCK CS HOLD Hold Hold Hold

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 12. Electrical Specifications 12.1 Absolute Maximum Ratings* *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. All Input Voltages (including NC Pins) All Output Voltages 12.2 DC and AC Operating Range AT26DF081A Operating Temperature (Case) Ind. -40°C to 85°C VCC Power Supply 2.7V to 3.6V 12.3 DC Characteristics Symbol Parameter Condition Min Typ Max Units ISB Standby Current CS, WP, HOLD = VCC, all inputs at CMOS levels µA IDPD Deep Power-down Current CS, WP, HOLD = VCC, all inputs at CMOS levels µA ICC1 Active Current, Read Operation f = 70 MHz; IOUT = 0 mA; CS = VIL, VCC = Max mA f = 66 MHz; IOUT = 0 mA; CS = VIL, VCC = Max f = 50 MHz; IOUT = 0 mA; CS = VIL, VCC = Max f = 33 MHz; IOUT = 0 mA; CS = VIL, VCC = Max f = 20 MHz; IOUT = 0 mA; CS = VIL, VCC = Max ICC2 Active Current, Program Operation CS = VCC, VCC = Max mA ICC3 Active Current, Erase Operation CS = VCC, VCC = Max mA ILI Input Leakage Current VIN = CMOS levels µA ILO Output Leakage Current VOUT = CMOS levels µA VIL Input Low Voltage 0.3 x VCC V VIH Input High Voltage 0.7 x VCC V VOL Output Low Voltage IOL = 1.6 mA; VCC = Min 0.4 V VOH Output High Voltage IOH = -100 µA VCC - 0.2V V

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Notes: 1. Not 100% tested (value guaranteed by design and characterization). 2. 15 pF load at 70 MHz, 30 pF load at 66 MHz. 3. Only applicable as a constraint for the Write Status Register command when SPRL = 1 12.4 AC Characteristics Symbol Parameter Min Max Units fSCK Serial Clock (SCK) Frequency MHz fRDLF SCK Frequency for Read Array (Low Frequency - 03h opcode) MHz tSCKH SCK High Time 6.4 ns tSCKL SCK Low Time 6.4 ns tSCKR (1) SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tSCKF (1) SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tCSH Chip Select High Time ns tCSLS Chip Select Low Setup Time (relative to SCK) ns tCSLH Chip Select Low Hold Time (relative to SCK) ns tCSHS Chip Select High Setup Time (relative to SCK) ns tCSHH Chip Select High Hold Time (relative to SCK) ns tDS Data In Setup Time ns tDH Data In Hold Time ns tDIS (1) Output Disable Time ns tV (2) Output Valid Time ns tOH Output Hold Time ns tHLS HOLD Low Setup Time (relative to SCK) ns tHLH HOLD Low Hold Time (relative to SCK) ns tHHS HOLD High Setup Time (relative to SCK) ns tHHH HOLD High Hold Time (relative to SCK) ns tHLQZ (1) HOLD Low to Output High-Z ns tHHQX (1) HOLD High to Output Low-Z ns tWPS (1)(3) Write Protect Setup Time ns tWPH (1)(3) Write Protect Hold Time 100 ns tSECP (1) Sector Protect Time (from Chip Select High) ns tSECUP (1) Sector Unprotect Time (from Chip Select High) ns tEDPD (1) Chip Select High to Deep Power-down µs tRDPD (1) Chip Select High to Standby Mode µs

3600A–DFLASH–11/05 AT26DF081A [Preliminary] Note: 1. Not 100% tested (value guaranteed by design and characterization). 12.7 Input Test Waveforms and Measurement Levels tR, tF < 2 ns (10% to 90%) 12.8 Output Test Load 12.5 Program and Erase Characteristics Symbol Parameter Min Typ Max Units tPP Page Program Time (256 Bytes) 1.5 3.0 ms tBP Byte Program Time µs tBLKE Block Erase Time

4 Kbytes

0.05 0.2 sec

32 Kbytes

0.35 0.6

64 Kbytes

0.7 1.0 tCHPE Chip Erase Time sec tWRSR (1) Write Status Register Time 200 ns 12.6 Power-up Conditions Parameter Min Max Units Minimum VCC to Chip Select Low Time µs Power-up Device Delay Before Program or Erase Allowed ms Power-on Reset Voltage 1.5 2.5 V AC DRIVING LEVELS AC MEASUREMENT LEVEL 0.45V 1.5V 2.4V DEVICE UNDER TEST 30 pF

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 14. Ordering Information 14.1 Green Package Options (Pb/Halide-free/RoHS Compliant) fSCK (MHz) Ordering Code Package Operation Range AT26DF081A-SSU 8S1 Industrial (-40°C to 85°C) AT26DF081A-SU 8S2 Package Type 8S1 8-lead, 0.150” Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8S2 8-lead, 0.209” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 15. Packaging Information 15.1 8S1 – EIAJ SOIC 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE DRAWING NO. R REV. Note: 3/17/05 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) 8S1 C COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE 0.10 0.25 These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. Ø E N TOP VIEW C END VIEW A b L e D SIDE VIEW

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 15.2 8S2 – EIAJ SOIC

2325 Orchard Parkway

San Jose, CA 95131 TITLE DRAWING NO. R REV. 8S2, 8-lead, 0.209" Body, Plastic Small Outline Package (EIAJ) 10/7/03 8S2 C COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information. 2. Mismatch of the upper and lower dies and resin burrs are not included. 3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. 4. Determines the true geometric position. A 1.70 2.16 0.05 0.25 b 0.35 0.48 C 0.15 0.35 D 5.13 5.35 5.18 5.40 2, 3 E 7.70 8.26 L 0.51 0.85 e

1.27 BSC

e b A D E N C L Top View

3600A–DFLASH–11/05 AT26DF081A [Preliminary] 16. Revision History Version No./Release Date History Revision A – November 2005 Initial Release

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