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Rev. 0.1 06/11 Micross Components reserves the right to change products or specifi cations without notice. ADVANCE INFORMATION Normally-ON Trench Silicon Carbide Power JFET FEATURES:
- Hermetic TO-258 Packaging
- 200°C Maximum Operating Temperature (260 oC Contact Factory)
- Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions
- Inherent Radiation Tolerance >100K TID
- Positive Temperature Coef fi cient for Ease of Paralleling
- Extremely Fast Switching with No “Tail” Current at 150°C
- 1200 Volt Drain-Source Blocking Voltage
- RDS (on)max of 0.045
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance APPLICATIONS:
- Satellite Solar Inverters
- Mil Spec Power Supplies - Switch Mode - Uninterrupted
- Jet Engine Electronics
- Down-hole Electronics (Motor / Compressor Control) MAXIMUM RATINGS BVDS 1200 V RDS(ON)max 0.045 : ETS,typ TBD μJ ProductSummary Parameter Symbol Conditions Value Unit ID,Tj=125 Tj=125°C 50 ID,Tj=150 Tj=150°C 40 PulsedDrainCurrent(1) IDM Tc=25°C 150 A ShortCircuitWithstandTime tSC VDD<800V,TC<125°C 50 μS PowerDissipation PD Tc=25°C TBD W GateͲSourceVoltage VGS AC(2) Ͳ15to+15 V OperatingandStorageTemperature Tj,Tj,stg Ͳ55to+200* oC LeadTemperatureforSoldering Tsold 1/8"fromcase<10s 260 oC (1)Limitedbypulsewidth (2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions *Consultfactoryfor260OC ContinuousDrainCurrent A THERMAL CHARACTERISTICS Typ Max ThermalResistance,junctionͲtoͲcase Rth,JC Ͳ TBD ThermalResistance,junctionͲtoͲambient Rth,JA Ͳ TBD °C/W Value UnitSymbolParameter G (1) S (3) D (2,4) Internal Schematic 1 2 3 TO-258 Non-isolated tab version shown. For isolated tab version, tab (4) is No Connect. Die Inside For more products and information, please visit our website at www.micross.com
Rev. 0.1 06/11 Micross Components reserves the right to change products or specifi cations without notice. ADVANCE INFORMATION Min Typ Max DrainͲSourceBlockingVoltage BVDS VGS=Ͳ15V,ID=600ʅA 1200 Ͳ Ͳ V VDS=1200V,VGS=Ͳ15V, Tj=25oC Ͳ 22 0 VDS=1200V,VGS=Ͳ15V, Tj=150oC Ͳ 20 400 VGS=Ͳ15V,VDS=0V Ͳ Ͳ 0.1 Ͳ0.6 VGS=Ͳ15V,VDS=1200V Ͳ Ͳ 0.1 Ͳ ID=40A,VGS=2V, Tj=25°C Ͳ 0.035 0.045 ID=40A,VGS=2V, Tj=100°C Ͳ 0.07 Ͳ GateThresholdVoltage VGS(th) VDS=1V,ID=34mA Ͳ6.00 Ͳ Ͳ4.00 V GateForwardCurrent IGFWD VGS=2V Ͳ 0 Ͳ mA RG f=1MHz,drainͲsourceshorted Ͳ 4 Ͳ : RG(on) VGS>2.7V Ͳ 0.25 Ͳ : InputCapacitance Ciss Ͳ 1340 Ͳ OutputCapacitance Coss Ͳ 206 Ͳ ReverseTransferCapacitance Crss Ͳ 194 Ͳ EffectiveOutputCapacitance, energyrelated Co(er) VDS=0Vto600V, VGS=0V Ͳ 110 Ͳ TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ FallTime tf Ͳ TBD Ͳ TurnͲOnEnergy Eon Ͳ TBD Ͳ TurnͲOffEnergy Eoff Ͳ TBD Ͳ TotalSwitchingEnergy Ets Ͳ TBD Ͳ TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ FallTime tf Ͳ TBD Ͳ TurnͲOnEnergy Eon Ͳ TBD Ͳ TurnͲOffEnergy Eoff Ͳ TBD Ͳ TotalSwitchingEnergy Ets Ͳ TBD Ͳ TotalGateCharge Qg Ͳ 65 Ͳ GateͲSourceCharge Qgs Ͳ 4 Ͳ GateͲDrainCharge Qgd Ͳ 54 Ͳ VDS=600V,ID=40A, InductiveLoad,TJ=150oC VDS=600V,ID=5A, VGS=+2.5V ns μJ ns μJ nC DynamicCharacteristics VDD=100V pF SwitchingCharacteristics VDS=600V,ID=40A, InductiveLoad,TJ=25oC OnCharacteristics DrainͲSourceOnͲresistance GateResistance RDS(on) : TotalGateReverseLeakage IGSS μA mA TotalDrainLeakageCurrent IDSS OffCharacteristics Value UnitSymbolParameter Conditions
ELECTRICAL CHARACTERISTICS
Rev. 0.1 06/11 Micross Components reserves the right to change products or specifi cations without notice. ADVANCE INFORMATION MECHANICAL DRAWING
ORDERING INFORMATION
BasePartNumber Configuration Package JunctionTemp.Range Processing ASJD1200R045 Blank= NonͲisolatedTab M=TO Ͳ258 Ͳ EL Blank S=IsolatedTab EX /V TempRanges: EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ) EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory) Processing: Blank=Commercial/StandardProcessing MILͲPRFͲ19500EquivalentProcessingAvailablePerSCD /V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering) /S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering) ExamplePartNumbers: ASJD1200R045SMͲEL ASJD1200R045MͲEX has commercial plastic versions of this product available. Please refer to the SemiSouth website http://www.semisouth.com/products/products.html for datasheet specifi cations and ordering information. The SemiSouth part number is SJDP120R045 and is supplied in a TO-247 plastic package. $IA 4YP "3# "3# NOTE: 1. Dimensions in mm (inches) 2. Controlling dimensions (inches)
Rev. 0.1 06/11 Micross Components reserves the right to change products or specifi cations without notice. ADVANCE INFORMATION DOCUMENT TITLE Normally-ON Trench Silicon Carbide Power JFET Rev # History Release Date Status