AS8S512K32 MICROSS | Alldatasheet

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& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. GENERAL DESCRIPTION The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military applications.

FEATURES

(Top View) AVAILABLE AS MILITARY SPECIFICATIONS

  • SMD 5962-94611 & 5962-95624 (Military Pinout)
  • MIL-STD-883 512K x 32 SRAM SRAM MEMORY ARRAY

68 Lead CQFP

(Q with Pinout A) I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30 I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1 I/O 31 Vcc A13 A12 A11 A10 I/O 0 I/O 16 A18 A17 CS4\\ CS3\\ CS2\\ CS1\\ NC Vcc NC NC OE\\ WE\\ A16 A15 A14 I/O 15 (Q, Q1, Q2) Military SMD Pinout Option I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 Vcc A11 A12 A13 A14 A15 A16 CS1\\ OE\\ CS2\\ A17 WE2\\ WE3\\ WE4\\ A18 NC NC NC CS3\\ GND CS4\\ WE1\\ A10 Vcc

68 Lead

(BQFP) Military SMD Pinout Option I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 Vcc A11 A12 A13 A14 A15 A16 CS2\\ OE\\ CS4\\ A17 A18 NC NC NC NC NC NC CS1\\ GND CS3\\ WE\\ A10 Vcc

66 Lead

PGA (P) Military SMD Pinout

  • Operation with single 5V supply
  • Vastly improved Icc Specs
  • High speed: 12, 15, 17, 20, 25, 35, 45 & 55ns
  • Low power CMOS
  • Built in decoupling caps for low noise
  • Organized as 512Kx32 , byte selectable
  • TTL Compatible Inputs and Outputs OPTIONS Operating Temp. Ranges Markings Full Military (-55oC to +125oC) Q & 883 Military (-55oC to +125oC) XT Industrial (-40oC to +85oC) IT Timing Markings Timing Markings 12ns -12 25ns -25 15ns -15 35ns -35 17ns -17 45ns -45 20ns -20 55ns -55 Package Markings Ceramic Quad Flatpack Q, Q1, Q2, BQFP Pin Grid Array P Low Power Data Retention Mode L Pinout Markings Military (no indicator) Commercial A* *(available with Q package only)

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. COMMERCIAL PINOUT/BLOCK DIAGRAMMILITARY PINOUT/BLOCK DIAGRAM CS SRAMSRAMSRAMSRAMSRAM AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. CS\\4 CS\\3 CS\\2 CS\\1 WE\\ OE\\ A0 - A18 I/O 24 - I/O 31 I/O 16 - I/O 23 I/O 8 - I/O 15 I/O 0 - I/O 7 512K x 8 512K x 8 512K x 8 512K x 8 COMMERCIAL PINOUT/BLOCK DIAGRAM CS MILITARY PINOUT/BLOCK DIAGRAM CS CS CS TRUTH TABLE MODE OE\\ CE\\ WE\\ I/O POWER Read LLH DOUT ACTIVE Write(2) XLL DIN ACTIVE Standby XHX High Z STANDBY CS CS4\\ CS3\\ CS2\\ CS1\\

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Ap- plication Information section at the end of this datasheet for more information. DESCRIPTION SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES Power Supply Current: Operating Icc 250 200 175 150 140 130 120 110 m A 3,13 Power Supply Current: Standby ISBT1 40 40 40 35 35 30 30 30 mA 3, 13 CMOS Standby ISBT2 20 20 20 20 20 20 20 20 mA VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz MAX CONDITIONS CS\\<VIL; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open CS\\>VIH; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) SRAMSRAMSRAMSRAMSRAM AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more infor- mation. DESCRIPTION SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES Power Supply Current: Operating Icc 250 200 700 650 600 570 570 550 mA 3,13 Power Supply Current: Standby ISBT1 80 80 240 240 190 190 150 150 mA 3, 13 CMOS Standby ISBT2 80 80 80 80 80 80 80 80 mA VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz MAX CONDITIONS CS\\<VIL; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open CS\\>VIH; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55 oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS NOTES Input High (logic 1) Voltage VIH 2.2 VCC+.5 V1 Input Low (logic 1) Voltage VIL -0.5 0.8 V 1,2 Input Leakage Current ADD,OE ILI1 -10 10 µA Input Leakage Current WE, CE ILI2 -10 10 µA Output(s) Disabled 0V<VOUT<VCC Output High Voltage IOH = 4.0mA V OH 2.4 V 1 Output Low Voltage IOL = 8.0mA V OL 0.4 V 1 Supply Voltage VCC 4.5 5.5 V 1 0V<VIN<VCC Output Leakage Current I/O ILO µA10-10

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%) MIN MA X MIN MA X MIN MA X MIN MA X MIN MA X MIN MA X MIN MA X MIN MA X READ cycle time tRC 12 15 17 20 25 35 45 55 ns Address access time tAA 12 15 17 20 25 35 45 55 ns Chip select access time tACS 12 15 17 20 25 35 45 55 ns Output hold from address change tOH 22 222222 n s Chip select to output in Low-Z tLZCS 22 222222 n s 4,6,7 Chip select to output in High-Z tHZCS 78 9 10 12 15 20 20 ns 4,6,7 Output enable access time tAOE 78 9 10 12 15 20 20 ns Output enable to output in Low-Z tLZOE 00 000000 n s 4 ,6 Output disable to output in High-Z tHZOE 79 12 12 12 15 20 20 ns 4,6 WRITE cycle time tWC 12 15 17 20 25 35 45 55 ns Chip select to end of write tCW 10 12 15 15 17 20 25 25 ns Address valid to end of write tAW 10 12 15 15 17 20 25 25 ns Address setup time tAS 22222222 n s Address hold from end of write tAH 11111111 n s WRITE pulse width tWP1 10 12 15 15 17 20 25 25 ns WRITE pulse width tWP2 10 12 15 15 17 20 25 25 ns Data setup time tDS 8 10 12 10 12 15 20 20 ns Data hold time tDH 00000000 n s Write disable to output in Low-z tLZWE 22222222 n s 4,6,7 Write enable to output in High-Z tHZWE 7 8 9 11 13 15 15 15 ns 4,6,7 WRITE CYCLE READ CYCLE DESCRIPTION -20-17 -25SYMBOL NOTESUNITS-35-12 -15 -45 -55

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. READ CYCLE NO. 1 READ CYCLE NO. 2 ADDRESS DATA I/O PREVIOUS DATA VALID DATA VALID tOH tAA tRC ADDRESS tRC HIGH IMPEDANCE DATA VALID tAA tACStLZCS tHZCS tHZOEtAOEtLZOE CS\\ OE\\ DATA I/O

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. WRITE CYCLE NO. 2 (Write Enable Controlled) WRITE CYCLE NO. 1 (Chip Select Controlled) ADDRESS tWC DATA VALID tAWtAS tWP21 tCWCS\\ WE\\ DATA I/O tDHtDS tAH ADDRESS tWC DATA VALID tAW tCW tAS tAH tLZWE tWP11 tHZWE CS\\ WE\\ DATA I/O tDHtDS

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. tHZCS, is less than tLZCS, and tHZWE is less than tLZWE. 8. WE\\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 12. Chip enable (CS\\) and write enable (WE\\) can initiate and terminate a WRITE cycle. 13. ICC is for 32 bit mode. NOTES 1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. The specified value applies with the outputs 4. This parameter guaranteed but not tested. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, RC(MIN) unloaded, and f= HZ.t LOW VCC DATA RETENTION WAVEFORM LOW POWER CHARACTERISTICS (L Version Only) DESCRIPTION SYMBOL MIN MA X UNITS NOTES VCC for Retention Data VDR 2V VCC = 2V I CCDR 10 mA VCC = 3V I CCDR 12 mA Chip Deselect to Data Retention Time tCDR 0 ns 4 Operation Recovery Time tR tRC ns 4, 11 Data Retention Current All Inputs @ Vcc + 0.2V or Vss + 0.2V, CS\\ = Vcc + 0.2V CONDITIONS DATA RETENTION MODE 4.5V 4.5V VDR>2V VDR tCDR tR VCC CS\\ 1-4

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. MECHANICAL DEFINITIONS* Micross Case #702 (Package Designator Q) SMD 5962-94611, Case Outline M *All measurements are in inches. 4 x D2 4 x D1 D b e SEE DETAIL A A E DETAIL A 1o - 7o R B SRAMSRAMSRAMSRAMSRAM AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #702 (Package Designator Q) SMD 5 962-94611, Case Outline M *All measurements are in inches. 4 x D2 4 x D1 D b e MIN MAX A 0.123 0.200 A1 0.118 0.186 A2 0.000 0.020 B b 0.013 0.017 D D1 0.870 0.890 D2 0.980 1.000 E 0.936 0.956 e R 0.005 --- L1 0.035 0.045 SYMBOL

0.800 BSC

0.050 BSC

0.010 REF

A E DETAIL A 1o - 7o R B

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. Dimensions in inches e R .050 BSC .010 TYP PACKAGE SPECIFICATION B D b A Symbol .890 .200 Max .080 .017 .070 .010 REF .870 .013 Min .800 BSC 1.010 1.030 .050 .065 D b e D3 A A1B R .975 .995 MECHANICAL DEFINITIONS* Micross Package Designator Q2 *All measurements are in inches. Symbol Min Max A .200 A1 .070 .080 B .013 .017 b D D1 .870 .890 D2 .980 1.00 e R L1 .035 .045 Dimensions are in inches. PACKAGE SPECIFICATION .010 REF .800 BSC .050 BSC .010 TYP

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. MECHANICAL DEFINITIONS* Micross Case #904 (Package Designator P ) SMD 5962-94611, Case Outline T *All measurements are in inches. 4 x D Pin 66 e Pin 11 Pin 1 (identified by 0.060 square pad) Pin 56 A L φb e φb1 SRAMSRAMSRAMSRAMSRAM AS8S512K32 & AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.0 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #9 04 (Package Designator P ) SMD 59 62-94611, Case Outline T *All measurements are in inches. 4 x D Pin 66 e Pin 11 Pin 1 (identified by 0.060 square pad) Pin 56 A L φb e φb1 MIN MAX A 0.144 0.181 A1 0.025 0.035 φb 0.016 0.020 φb1 0.045 0.055 D 1.065 1.085 D1/E1 e L 0.145 0.155

0.600 TYP

0.100 TYP

1.000 TYP

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. MECHANICAL DEFINITIONS* Micross Case (Package Designator Q1) SMD 5962-94611, Case Outline A *All measurements are in inches. MIN MAX A --- 0.200 A1 0.054 --- b 0.013 0.017 B c 0.009 0.012 D/E 0.980 1.000 D1/E1 0.870 0.890 D2/E2 e L 0.035 0.045 R SYMBOL SMD SPECIFICATIONS

0.010 TYP

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. Device Number Package Type Speed (ns) Power Option Process L (Low Power) Blank (Std power) *Available Processes IT = Industrial Temperature Range ‐400C to +850C XT = Military Temperature Range ‐550C to +1250C Q & 883C = Full Military Processing ‐550C to +1250C AS8S512K32BQFP‐55/883C AS8S512K32P‐25/XT AS8S512K32Q1‐55/IT Examples: AS8S512K32Q‐15/Q AS8S512K32P‐17L/Q

ORDERING INFORMATION

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. MICROSS TO DSCC PART NUMBER CROSS REFERENCE Micross Part# SMD Part# Micross Part# SMD Part# Micross Part# SMD Part# AS8S512K32Q‐12/Q 5962‐9461118HMA AS8S512K32Q1‐12/883C 5962‐9461118HAA AS8S512K32P‐12/Q 5962‐9461118HTA AS8S512K32Q‐12/Q 5962‐9461118HMC AS8S512K32Q1‐12/883C 5962‐9461118HAC AS8S512K32P‐12/Q 5962‐9461118HTC AS8S512K32Q‐12L/Q 5962‐9461120HMA AS8S512K32Q1‐12L/883 5962‐9461120HAA AS8S512K32P‐12L/Q 5962‐9461120HTA AS8S512K32Q‐12L/Q 5962‐9461120HMC AS8S512K32Q1‐12L/883 5962‐9461120HAC AS8S512K32P‐12L/Q 5962‐9461120HTC AS8S512K32Q‐15/Q 5962‐9461117HMA AS8S512K32Q1‐15/883C 5962‐9461117HAA AS8S512K32P‐15/Q 5962‐9461117HTA AS8S512K32Q‐15/Q 5962‐9461117HMC AS8S512K32Q1‐15/883C 5962‐9461117HAC AS8S512K32P‐15/Q 5962‐9461117HTC AS8S512K32Q‐15L/Q 5962‐9461119HMA AS8S512K32Q1‐15L/883 5962‐9461119HAA AS8S512K32P‐15L/Q 5962‐9461119HTA Package Designator Q Package Designator Q1 Package Designator P AS8S512K32Q‐15L/Q 5962‐9461119HMA AS8S512K32Q1‐15L/883 5962‐9461119HAA AS8S512K32P‐15L/Q 5962‐9461119HTA AS8S512K32Q‐15L/Q 5962‐9461119HMC AS8S512K32Q1‐15L/883 5962‐9461119HAC AS8S512K32P‐15L/Q 5962‐9461119HTC AS8S512K32Q‐17/Q 5962‐9461116HMA AS8S512K32Q1‐17/883C 5962‐9461116HAA AS8S512K32P‐17/Q 5962‐9461116HTA AS8S512K32Q‐17/Q 5962‐9461116HMC AS8S512K32Q1‐17/883C 5962‐9461116HAC AS8S512K32P‐17/Q 5962‐9461116HTC AS8S512K32Q‐17L/Q 5962‐9461110HMA AS8S512K32Q1‐17L/883 5962‐9461110HAA AS8S512K32P‐17L/Q 5962‐9461110HTA AS8S512K32Q‐17L/Q 5962‐9461110HMC AS8S512K32Q1‐17L/883 5962‐9461110HAC AS8S512K32P‐17L/Q 5962‐9461110HTC AS8S512K32Q‐20/Q 5962‐9461115HMA AS8S512K32Q1‐20/883C 5962‐9461115HAA AS8S512K32P‐20/Q 5962‐9461115HTA AS8S512K32Q‐20/Q 5962‐9461115HMC AS8S512K32Q1‐20/883C 5962‐9461115HAC AS8S512K32P‐20/Q 5962‐9461115HTC AS8S512K32Q‐20L/Q 5962‐9461109HMA AS8S512K32Q1‐20L/883 5962‐9461109HAA AS8S512K32P‐20L/Q 5962‐9461109HTA AS8S512K32Q‐20L/Q 5962‐9461109HMC AS8S512K32Q1‐20L/883 5962‐9461109HAC AS8S512K32P‐20L/Q 5962‐9461109HTCAS8S512K32Q‐20L/Q 5962‐9461109HMC AS8S512K32Q1‐20L/883 5962‐9461109HAC AS8S512K32P‐20L/Q 5962‐9461109HTC AS8S512K32Q‐25/Q 5962‐9461114HMA AS8S512K32Q1‐25/883C 5962‐9461114HAA AS8S512K32P‐25/Q 5962‐9461114HTA AS8S512K32Q‐25/Q 5962‐9461114HMC AS8S512K32Q1‐25/883C 5962‐9461114HAC AS8S512K32P‐25/Q 5962‐9461114HTC AS8S512K32Q‐25L/Q 5962‐9461108HMA AS8S512K32Q1‐25L/883 5962‐9461108HAA AS8S512K32P‐25L/Q 5962‐9461108HTA AS8S512K32Q‐25L/Q 5962‐9461108HMC AS8S512K32Q1‐25L/883 5962‐9461108HAC AS8S512K32P‐25L/Q 5962‐9461108HTC AS8S512K32Q‐35/Q 5962‐9461113HMA AS8S512K32Q1‐35/883C 5962‐9461113HAA AS8S512K32P‐35/Q 5962‐9461113HTA AS8S512K32Q‐35/Q 5962‐9461113HMC AS8S512K32Q1‐35/883C 5962‐9461113HAC AS8S512K32P‐35/Q 5962‐9461113HTC AS8S512K32Q‐35L/Q 5962‐9461107HMA AS8S512K32Q1‐35L/883 5962‐9461107HAA AS8S512K32P‐35L/Q 5962‐9461107HTA AS8S512K32Q‐35L/Q 5962‐9461107HMC AS8S512K32Q1‐35L/883 5962‐9461107HAC AS8S512K32P‐35L/Q 5962‐9461107HTC AS8S512K32Q 45/Q 5962 9461112HMA AS8S512K32Q1 45/883C 5962 9461112HAA AS8S512K32P 45/Q 5962 9461112HTAAS8S512K32Q‐45/Q 5962‐9461112HMA AS8S512K32Q1‐45/883C 5962‐9461112HAA AS8S512K32P‐45/Q 5962‐9461112HTA AS8S512K32Q‐45/Q 5962‐9461112HMC AS8S512K32Q1‐45/883C 5962‐9461112HAC AS8S512K32P‐45/Q 5962‐9461112HTC AS8S512K32Q‐45L/Q 5962‐9461106HMA AS8S512K32Q1‐45L/883 5962‐9461106HAA AS8S512K32P‐45L/Q 5962‐9461106HTA AS8S512K32Q‐45L/Q 5962‐9461106HMC AS8S512K32Q1‐45L/883 5962‐9461106HAC AS8S512K32P‐45L/Q 5962‐9461106HTC AS8S512K32Q‐55/Q 5962‐9461111HMA AS8S512K32Q1‐55/883C 5962‐9461111HAA AS8S512K32P‐55/Q 5962‐9461111HTA AS8S512K32Q‐55/Q 5962‐9461111HMC AS8S512K32Q1‐55/883C 5962‐9461111HAC AS8S512K32P‐55/Q 5962‐9461111HTC AS8S512K32Q‐55L/Q 5962‐9461105HMA AS8S512K32Q1‐55L/883 5962‐9461105HAA AS8S512K32P‐55L/Q 5962‐9461105HTA AS8S512K32Q‐55L/Q 5962‐9461105HMC AS8S512K32Q1‐55L/883 5962‐9461105HAC AS8S512K32P‐55L/Q 5962‐9461105HTC Pk Di t BQFP Micross Part# SMD Part# AS8S512K32BQFP‐20/883C 5962‐9562409HNC AS8S512K32BQFP‐25/883C 5962‐9562408HNC AS8S512K32BQFP‐25/883C 5962‐9562412HNC AS8S512K32BQFP‐35/883C 5962‐9562407HNC AS8S512K32BQFP‐35/883C 5962‐9562411HNC AS8S512K32BQFP‐45/883C 5962‐9562406HNC AS8S512K32BQFP‐45/883C 5962‐9562410HNC Package Designator BQFP AS8S512K32BQFP‐55/883C 5962‐9562405HNC

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. DOCUMENT TITLE 512K x 32 SRAM MEMORY ARRAY Rev # History Release Date Status

6.5 Updated Features, Temp Range & April 2010 Release

General Description - Page 1, Updated Order Chart - Page 13, Removed Space Processing - Page 13

6.6 Updated Ordering Table, Page 14 June 2010 Release

Updated DSCC Cross Reference, Page 15 Added SMD 5962-95624, Page 1 Added BQFP Package, Page 1 and added BQFP drawing on page 13 (BQFP package is listed on SMD 5962-95624)

6.7 Updated Q2 Spec, Page 10 July 2010 Release

6.8 Page 3 Changes: June 2011 Release

  • I CC (mA) -17 700 175 -20 650 150 -25 600 140 -35 570 130 -45 570 120 -55 550 110
  • I SBT1 (mA) -12 80 40 -15 80 40 -17 240 40 -20 240 35 -25 190 35 -35 190 30 -45 150 30 -55 150 30
  • I SBT2(mA) 80 20
  • 2V I CCDR(mA) 20 10
  • 3V I CCDR(mA) 28 12
  • Removed note from page 8 "-12 &-15 have a 32mA limit".

& AS8S512K32A AS8S512K32 & AS8S512K32A Rev. 6.9 08/13 Micross Components reserves the right to change products or specifications without notice. Rev # History Release Date Status

6.9 Added 68 Lead CQFP (BQFP) August 2013 Release

Military SMD Pinout Option