AS89000 AMSOSRAM | Alldatasheet
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⚖ Production data information is current as of publication date. Products conform to specifications per the terms of ams Sensors Germany GmbH. The information in this document is subject of change without notice, please confirm that this is the latest version. Please check with a ams Sensors Germany sales representative for availability and further information. Full legal notices can be found on the final page. ams Sensors Germany GmbH db05175e V3.01 - 2017-07-06 ams Sensors Germany GmbH db05175e V3.01 - 2017-07-06 OPAMP 1 R C OPAMP X R C IIN<1> IIN<X> VREF VDD GND SW1 SW2 SW3 SW4 AS89000 PD VOUT<X> VOUT<1> DATASHEET AS89000 Multi-channel programmable gain transimpedance amplifier QSOP16 Order No.: 305100002 Status: preliminary INTRODUCTION The AS89000 -devices are a family of integrated circuits of programmable gain transimpedance amplifiers with 4 channels per IC (more custom specific, on request). The AS89000-devices are mainly used for signal conditioning of sensors with current outputs. They are especially suitable for connection of photodiodes of array and row sensors. The possibility to adjust the transimpedance in 8 stages is a special feature. The adjustment is made by programming three pins and is valid for all channels together. The device packages (naked chip on request) are R oHS conform and optimized for COB- mounting and SMD.
1 BLOCK DIAGRAM
Figure 1: Block diagram
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2 DESCRIPTION OF INTERFACE
2.1 Pin Assignment
Table 1: Pin assignment SIGNAL NAME TYP A/DA FUNCTION VDD input a/d power supply GND input a/d ground VREF input a reference voltage SW1 input d input 1 for adjustment of transimpedance of AS89000-amplifier (pull down) SW2 input d input 2 for adjustment of transimpedance of AS89000-amplifier (pull down) SW3 input d input 3 for adjustment of transimpedance of AS89000-amplifier (pull down) SW4 input d switchable frequency range depended on input capacitance of the photo-sensor (pull down) PD input d power down mode (pull down) IIN<X> input a analog current input of amplifier X VOUT<X> output a analog voltage output of amplifier X a) analog or digital
2.2 Adjustment of Transimpedance
Table 2: Adjustment of Transimpedance SETTINGS OF DIGITAL INPUTS TRANSIMPEDANCE R SW1 SW2 SW3 VDD VDD VDD 20 M – stage 1 GND VDD VDD 10 M – stage 2 GND VDD GND 5 M – stage 3 VDD GND VDD 2 M – stage 4 GND GND VDD 1 M – stage 5 VDD GND GND 500 k – stage 6 VDD VDD GND 100 k – stage 7 GND GND GND 25 kb – stage 8 b) default by pull down
2.3 Switchable Frequency Rrange
Table 3: Switchable Frequency Rrange SETTINGS OF DIGITAL INPUT ALLOWED CAPACITANCE OF PHOTO-SENSOR SW4 VDD < 5 pF GND < 80 pFc c) default by pull down
2.4 Power Down Mode
Table 4: Power Down Mode SETTINGS OF DIGITAL INPUT BIAS CURRENT OF THE IC PD VDD < 8 µA GND typicald d) default by pull down
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3 DESCRIPTION OF FUNCTION
The AS89000-devices are programmable gain transimpedance amplifiers 1 with different numbers of channels ( AS89000 – 4 channels). There is one transimpedance amplifier per channel between a current input IIN<X> and a voltage output 2 VOUT<X>. Its transimpedance is selectable in 8 stages. This adjustment can be effected by setting of digital inputs SW1, SW3 and SW4 and is valid for all channels simultaneously (chapter 2.2). Also simultaneously valid for all channels is a compensation of the input capacitance of photo - sensors for two possible frequency ranges (switchable by SW4, chapter 2.3). The pins SW1, SW2, SW3 and SW4 are pull down inputs. The second input of all transimpedance amplifiers is used for a common supply by a reference voltage necessarily fed in through the pin VREF. All channels are compensated for an external input capacitance of the photo-sensor of smaller than 80 pF (SW4 = GND). The power supply for the AS89000-devices is typical 3 V to 5 V between VDD and GND. The power down mode is adjusted by PD = VDD and switches off the functionality. In that case it must be pointed out that the transimpedance resistor of stage 8 is between the particular inputs and outputs. The amplifiers are switched off (tri-state).
4 ELECTRICAL CHARACTERISTICS
4.1 Maximum Conditions
Violations of absolute maximum conditions are not allowed under any circumstances, otherwise the IC can be destroyed. All voltages are referenced to GND = 0 V. PARAMETER NAME MIN MAX UNIT power supply VDD 0.3 7.0 V input and output voltages IC-pinning 0.3 VDD+0.3 V power dissipation POP 0.025 W operating temperature TOP 40 125 °C storage temperature TSTG 55 155 °C weight m 0,08 g
4.2 Operating Conditions
All voltages are referenced to GND = 0 V. Table 5: Operating Conditions PARAMETER NAME MIN TYP MAX UNIT CONDITIO N supply voltage VDD 2.7 3 to 5 5.5 V bias current AS89000 I(VDD) 2.5 4.0 mA 27°C, VDD=5.5 V 1 work as inverted amplifiers
2 VOUT = VREF – IIn * R
ams.com db05175e_V3.01_preliminary_2017-07-06 Page 5 of 14 AS89000 V3.01 PARAMETER NAME MIN TYP MAX UNIT CONDITIO N bias current AS89000 I(VDD) 8 µA PD=VDD operating temperature TOP 40 27 125 °C input high level VIH 0.7-VDD VDD+0.3 V input low level VIL 0.3 0.8 V reference voltage VREF 0.4 VDD-0.4 V
4.3 AC/DC-Characteristics
Unless otherwise specified the data in this table is valid for TOP = 27°C and VDD = 5 V. All voltages are referenced to GND = 0 V. Table 6: AC/DC-Characteristics PARAMETER NAME MIN TYP MAX UNIT CONDITION 0.025 µA stage 1 0.05 µA stage 2 0.1 µA stage 3 0.25 µA stage 4 0.5 µA stage 5 1 µA stage 6 5 µA stage 7 20 µA stage 8 14000 20000 26700 k stage 1 7000 10000 13350 k stage 2 3500 5000 6700 k stage 3 1400 2000 2670 k stage 4 700 1000 1335 k stage 5 350 500 670 k stage 6 70 100 133 k stage 7 17 25 34 k stage 8 4 6 16 kHz stage 1, TOP (4.2 ) 7 11 28 kHz stage 2, TOP (4.2 ) 11 16 42 kHz stage 3, TOP (4.2 ) 18 26 66 kHz stage 4, TOP (4.2 ) 25 35 95 kHz stage 5, TOP (4.2 ) 35 50 130 kHz stage 6, TOP (4.2 ) 80 120 280 kHz stage 7, TOP (4.2 ) 160 300 580 kHz stage 8, TOP (4.2 ) 4 6 16 kHz stage 1, TOP (4.2 ) 7 11 28 kHz stage 2, TOP (4.2 )
ams.com db05175e_V3.01_preliminary_2017-07-06 Page 6 of 14 AS89000 V3.01 PARAMETER NAME MIN TYP MAX UNIT CONDITION signal frequency at input SW4 = VDD (CPHOTO-SESNOR < 5pF) f3dB 14 21 45 kHz stage 3, TOP (4.2 ) 35 54 130 kHz stage 4, TOP (4.2 ) 70 110 260 kHz stage 5, TOP (4.2 ) 100 160 360 kHz stage 6, TOP (4.2 ) 260 380 780 kHz stage 7, TOP (4.2 ) 500 800 1700 kHz stage 8, TOP (4.2 ) temperature coefficient of the feedback resistor3 TCR -3300 ppm/K offset voltage VOFF4 -10 10 mV TOP (4.2 ) capacitive load at VOUT<X> CLOAD 50 pF ILOAD < 0.5 mA per output pull down current SW1, SW2, SW3, SW4, PD IPDPAD 200 µA digital inputs input capacitance of external connected photo-sensors CPHOTO- SENSOR 80 pF per input SW4 = GND input capacitance of external connected photo-sensors CPHOTO- SENSOR 5 pF per input SW4 = VDD tolerance of the feedback resistors between the four channels TOLR5 1 10 % DC input current; for all stages 3 see also chapter 6.2
4 VOFF = VOUT<X> - VREF; results from input offset voltage and input leakage current
5 up to max. 1% available on request
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5 PACKAGES
5.1 Shape & Dimensions
Figure 2: Shape & Dimensions PIN 1 D A1 A e b w L E H 1) tapered edge As shown in the figure PIN 1 is located on the bottom of the left corner of the outline. Table 7: dimensions – mm TYP PACKAGE D E H A A1 e b L w
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5.2 Pin Configuration
Figure 3: Pin Configuration w
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5.3 Soldering Information
The solder reflow profile should fulfil the specifications for the reflow profile parameters given in Table 8. These parameters follow the IPC/JEDEC standard J -STD-020D.1. The temperature should be measure at the top of the package. Figure 4: Recommended reflow profile Table 8: Reflow profile parameters PROFILE PARAMETER ASSEMBLY, CONVECTION ramp-up rate (Tsmax to Tp) 2-3°C/second preheat temperature (Tsmin to Tsmax) 150°C to 200°C preheat time (ts) 60 – 120 seconds time above TL, 217°C (tL) 60 – 150 seconds peak temperature (Tp) 260°C time within 5°C of peak temperature (tp) 20 – 40 seconds ramp-down rate 6°C/second time 25°C to peak temperature 8 minutes max.
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6 APPLICATIONS
6.1 Connection of ams Sensors Germany Color Sensor
Figure 5: Circuit for the conversion of sensor’s photo current to an equivalent voltage by using the amplifier AS89000 Opposite figure shows a circuit for the conversion of sensor’s photo current to an equivalent voltage by using the amplifier AS89000. The resulted voltage can be processed e.g. with an ADC. By the selection of suitable resistors/amplifying stage the output voltage range can be adjusted to the photo current value by programming the pin-programmable transimpedance amplifier AS89000.
6.2 Temperature Compensation of AS89000 via Reference Method
The following description shows a possible approach for reduction the temperature dependency of amplifier via reference channel (use the 4th channel of AS89000). Figure 6: Possible approach for reduction the temperature dependency of amplifier via reference channel Photo Out x I VR
ams.com db05175e_V3.01_preliminary_2017-07-06 Page 11 of 14 AS89000 V3.01 The input of the reference channel is connected with an external resistor that will load with an input voltage which is different to VREF. The output voltage of the measuring channel is explained in the coming formula: (1) IIN is the input current, which is supplied by the external sensor. The output voltage of the channel for the temperature compensation is defined: (2) TRTKTREXT TVREFTVINTVREFTVTK The following voltages will calculate for temperature compensation with a resistor. (3) (4) For example the voltage ∆VTK(T0) will detect during the initialization of the system. The value is equivalent to a constant for the temperature T0, which prevailed at the time of initialization. All further measurements will calibrate by this value. (5) TVTK TVTKTVTIATiertVTIAkorrig All variables of the channel for temperature compensation are affected by temperature effects. Therefore there is an additional coefficient necessary. That coefficient should be highly reduced opposite to the named above value of the RTIA (typical -3300 ppm/K). (6) )()()( VREFTKVREFVIN VREFVINTKVREFVIN „TK(REXT)“ is the temperature coefficient of the external resistor, „TK(VIN)“ is the temperature coefficient of the input voltage and „TK(VREF)“ is the temperature coefficient of the reference voltage. Please consider the following interrelationship by the choice of resistors REXT and RTK in term of the selected voltages VIN and VREF (values from (2) and (4)). (7) 1 VREF VIN RTK REXT The adherence of this non -equation ensures, that the voltage VTK is located in the working range. That means the amplifier of the channel for temperature compensation doesn’t go into saturation. Furthermore you can calculate the absolute value of the transimpedance resistor RTK for a certain actual existing temperature. (8) TVREFTVIN TVTKTVREFTREXTTRTK
6.3 Output Signals VOUT
AS89000 works by the principle of a connected op-amp: VOUT = VREF – IIn * R {limited by GROUND …VREF} IIN = 0 VOUT = VREF IIN = max. VOUT = 0
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ORDERING INFORMATION
NAME STATUS PACKAGE ARTICLE AS89000 Series QSOP16 305100002 For more information please contact: ams Sensors Germany GmbH: Göschwitzer Straße 32
07745 JENA | GERMANY
Phone: +49 3641 2809-0 Fax: +49 3641 2809-12 sales-europe@ams.com www.ams.com
ams.com db05175e_V3.01_preliminary_2017-07-06 Page 13 of 14 AS89000 V3.01 LEGAL NOTES AND WARNINGS Failure to comply with these instructions could result in death or serious injury. Misuse of documentation – The information contained in this document is the property of ams Sensors Germany . Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically is prohibited, except where the express permission of ams Sensors Germany GmbH has been obtained. In general, all company and brand names, as well as th e names of individual products, are protected by brand, patent or product law. State of document - The information provided in this document is for reference only. Do not use this document as product installation guide since products can be under development to improve performance or any other purpose. Before you start any development or place an order please contact your supplier or ams Sensors Germany for the latest version of this document. ams Sensors Germany explicitly reserves the right to make techni cal changes to information described in the document. Information and Disclaimer – The information provided in this document is based on the knowledge of the ams Sensors Germany GmbH as of the date of publication. The ams Sensors Germany GmbH cannot give w arranty regarding the accuracy of information provided by third parties. ams Sensors Germany may not have conducted testing or chemical analysis on all incoming material or chemicals. ams Sensors Germany GmbH performs and continues to perform reasonable measures to provide the most accurate data at the given time. Additional efforts to integrate information provided by third parties are performed and continue to be performed. Certain supplier information may be proprietary or limited and not available at release. Personal Injury: All products are conform to the specifications in accordance with the terms and conditions of ams Sensors Germanys standard warranty. Production processing does not necessarily include testing of all parameters. RoHS Directiv e 2011/65/EU /REACH INFORMATION - RoHS compliance and PB free: The products of ams Sensors Germany fully comply with the current RoHS -directives. Our semiconductor products do not contain any of the six substance chemical categories, for example including the restriction on lead usage (lead weight may not exceed 0.1% in homogeneous materials). RoHS compliant products are suitable for the usage in lead -free specified processes, when designed to be soldered at high temperatures. REACH information: ams Sensors Germany products do not contain any of the latest REACH Substances of Very High Concern (SVHC) regarding the Europe Union (EU) Regulation 1907/2006. The latest 155 substances restricted per the REACH Regulation were last updated on June 16, 2014. Please refer to the following for the most current candidate list of substances: http://echa.europa.eu/candidate-list-table. ams Sensors Germany solutions are not designed or intended for use in critical applications, in which the failures or malfunctions of the product may result in personal injury or death. Use of ams Sensors Germany products in life support systems is expressly unauthorized and any use by customer is completely at their own risk . In the case of a restricted use of the product described here, an application of the product outside of this limitation is at your own risk.
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