AS4426P CALOGIC | Alldatasheet

Document overview

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Technical content

1.5A Dual High Speed MOSFET Drivers AS4426 / AS4427 / AS4428

FEATURES

  • • Matched Rise and Fall Times

APPLICATIONS

  • • Motor Controls
  • • Switch Mode Power Supplies
  • • Pulse Transformer Driver
  • • Class D Switching Amplifiers

DESCRIPTION

The AS4426 series are dual CMOS drivers are designed to drive capacitive, resistive and inductive loads switching 1000pF gate capacitances in under 30ns while providing low impedances in both the ON and OFF states to insure the MOSFET’s intended state will not be affected. All terminals are fully protected up to 4kV of ESD.

ORDERING INFORMATION

Part Logic Package Temperature AS4426PInverting8 Pin PDIP-40 oC to 85oC AS4426S Inverting8 Pin SOIC-40 oC to 85oC AS4427PNoninverting8 Pin PDIP-40 oC to 85oC AS4427S Noninverting8 Pin SOIC-40 oC to 85oC AS4428PDifferential8 Pin PDIP-40 oC to 85oC AS4428S Differential8 Pin SOIC-40 oC to 85oC LLC FUNCTIONAL DIAGRAM EFFECTIVE INPUT C = 12pF 300mV OUTPUT INPUT GND 4.7V VDD 1L-11 INVERTING OUTPUTS 2mA NONINVERTING OUTPUTS AS4426/AS4427/AS4428 1. AS4428 has one inverting and one noninverting driver. 2. Ground any unused driver input. NOTES:

Package Thermal Resistance PDIP R Operating Temperature Range Power Dissipation Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AS4426 / AS4427 / AS4428 LLC AMBIENT TEMPERATURE (˚C) PACKAGE POWER DISSIPATION 1000 400 25 150 1B-38 1251007550 200 600 800 PDIP SLOPE = –8mW/˚C SOIC SLOPE = –4mW/˚C (mW)PD ELECTRICAL CHARACTERISTICS TA = +25oC with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS INPUT VIH Logic 1 High Input Voltage 2.4 - - V VIL Logic 0 Low Input Voltage - - 0.8 V IIN Input Current -1 - 1 µA 0V ≤ VIN ≤ VDD OUTPUT VOH High Output Voltage V DD -0.025 - - V VOL Low Output Voltage - - 0.025 V R O Output Resistance - 7 10 Ω VDD = 18V, IO = 10mA IPK Peak Output Current - 1.5 - A IREV Latch-Up Protection Withstand Reverse Current >0.5 - - A Duty Cycle ≤ 2% t ≤ 300µs SWITCHING TIME (Note 1) tR Rise Time - 25 30 ns Figure 1 tF Fall Time - 25 30 ns Figure 1 tD1 Delay Time - - 30 ns Figure 1 tD2 Delay Time - - 50 ns Figure 1 POWER SUPPLY IS Power Supply Current - 4.5 0.4 mA mA V IN = 3V (Both Inputs) VIN = 0V (Both Inputs) Note: 1. Switching times are guaranteed by design.

!L-12 NC 1 4 5 IN A GND IN B OUT A NC VDD OUT B NC 1 4 5 IN A GND IN B OUT A NC VDD OUT B NC 1 IN A GND IN B OUT A NC VDD OUT B 2,4 7,5 INVERTING NC = NO INTERNAL CONNECTION 2,4 7,5 NONINVERTING NOTE: SOIC pinout is identical to DIP. DIFFERENTIAL AS4426AS4427AS4428

ELECTRICAL CHARACTERISTICS

Specifications measured over temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS INPUT VIH Logic 1 High Input Voltage 2.4 - - V VIL Logic 0 Low Input Voltage - - 0.8 V IIN Input Current -1 - 1 µA 0V ≤ VIN ≤ VDD OUTPUT V OH High Output Voltage V DD -0.025 - - V VOL Low Output Voltage - - 0.025 V R O Output Resistance - 9 12 Ω VDD = 18V, IO = 10mA IPK Peak Output Current - 1.5 - A IREV Latch-Up Protection Withstand Reverse Current >0.5 - - A Duty Cycle ≤ 2% t ≤ 300µs SWITCHING TIME (Note 1) tR Rise Time - - 40 ns Figure 1 tF Fall Time - - 40 ns Figure 1 tD1 Delay Time - - 40 ns Figure 1 tD2 Delay Time - - 60 ns Figure 1 POWER SUPPLY IS Power Supply Current - 0.6 mA mA V IN = 3V (Both Inputs) VIN = 0V (Both Inputs) Note: 1. Switching times are guaranteed by design.

FIGURE 1. SWITCHING TIME TEST CIRCUIT single driver, divide the stated value by 4.