APTD3216SF4C-P22

APTD3216SF4C-P22 TO-GRACE | Alldatasheet

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© 20 18 Kingbright. All Rights Reserved. Spec No: DSAO8741 / 1203002282 Rev No: V.3B Date: 01/19/2018 Page 1 / 4 DESCRIP TION z SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes

FEATURES

z 3.2 mm x 1.6 mm SMD LED, 1.8 mm thickness z Mech anically and spectrally matched to phototransistor z Packa ge: 2000 pcs / reel z Moistur e sensitivity level: 3 z Ro HS compliant APPLIC ATIONS z Infrared Ill umination for cameras z Mach ine vision systems z Surve illance systems z Industri al electronics z IR data trans mission z Rem ote control PACKAGE DI MENSIONS SELECTION GUIDE Notes: θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. APTD3216SF4C-P22 3.2 x 1.6 mm Infrared E mitting Diode Notes: All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. Part Number Emitti ng Color (Material) Lens T ype Po (mW /sr) @ 20mA [ 2] Vie wing Angle [1 Min. Ty p. 2θ1/2 APTD3216S F4C-P22 Infrared ( GaAlAs) Water Clear 1.6 4 40° RECOMMENDED SOLDERING PATTERN (units : mm ; tolerance : ± 0.1) Confidential 香港至恩科技有限公司 www.to-grace.com 公司授权代理销售LITE-ON:光耦，贴片LED灯等 进口原装，现货供应，价格优势，技术支持 电话：0755-83464948 传真：0755-83464076 A ll data sheet.com

© 2018 Kingbright. All Rights Reserved. Spec No: DSAO8741 / 1203002282 Rev No: V.3B Date: 01/19/2018 Page 2 / 4 ABSOLUTE MAXIMUM RATINGS at TA=25°C ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C Parameter Symbol Emitting Color Value Unit Typ. Max. Wavelength at Peak Emission IF = 20mA λpeak Infrared 880 - nm Spectral Bandwidth at 50% Φ REL MAX IF = 20mA Δλ Infrared 50 - nm Capacitance C Infrared 90 - pF Forward Voltage IF = 20mA VF [1] Infrared 1.3 1.6 V Reverse Current (VR = 5V) IR Infrared - 10 uA Temperature Coefficient of Wavelength IF = 20mA, -10°C ≤ T ≤ 85°C TCλ Infrared 0.3 - nm/°C Temperature Coefficient of VF IF = 20mA, -10°C ≤ T ≤ 85°C TCV Infrared -1.3 - mV/°C Parameter Symbol Value Unit Power Dissipation PD 85 mW Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Operating Temperature Top -40 to +85 °C Storage Temperature Tstg -40 to +85 °C DC Forward Current IF 50 mA Peak Forward Current IFM [1] 1200 mA Electrostatic Discharge Threshold (HBM) - 8000 V Thermal Resistance (Junction / Ambient) Rth JA [2] 420 °C/W Thermal Resistance (Junction / Solder point) Rth JS [2] 295 °C/W Notes: 1. Forward voltage: ±0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. Notes: 1. 1/100 Duty Cycle, 10μs Pulse Width. 2. Rth JA ,Rth JS Results from mounting on PC board FR4 (pad size ≥ 16 mm 2 per pad). 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. APTD3216SF4C-P22 Confidential A ll data sheet.com

© 2018 Kingbright. All Rights Reserved. Spec No: DSAO8741 / 1203002282 Rev No: V.3B Date: 01/19/2018 Page 3 / 4 Ta = 25 °C Forward voltage (V) Forward current (mA) 0.0 0.5 1.0 1.5 2.0 2.5 0 1 02 03 04 05 0 T a = 25 °C Forward current (mA) Radiant intensity normalised at 20mA - 4 0 - 2 0 0 2 04 06 08 0 1 0 0 Ambient temperature (°C) Permissible forward current (mA) 0.0 0.5 1.0 1.5 2.0 2.5 - 4 0 - 2 00 2 04 06 08 0 1 0 0 Ambient temperature (°C) Radiant intensity normalised at Ta = 25 °C 0.5 0.5 90° 15°0° 30° 45° 60° 75° -15° -30° -45° -60° -75° -90° 0.01.0 1.0 Ta = 25 °C 20% 40% 60% 80% 100% 600 650 700 750 800 850 900 950 1000 1050 T a = 25 °C SF4 Wavelength (nm) Relative Intensity (a. u.) TECHNICAL DATA RELATIVE INTENSITY vs. WAVELENGTH INFRARED TAPE SPECIFICATIONS (units : mm) REEL DIMENSION (units : mm) REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS SPATIAL DISTRIBUTION APTD3216SF4C-P22 Notes: 1. Don't cause stress to the LEDs while it is exposed to high temperature. 2. The maximum number of reflow soldering passes is 2 times. 3. Reflow soldering is recommended. Other soldering methods are not recommended as they might cause damage to the product. Forward Current vs. Forward Voltage Radiant Intensity vs. Forward Current Radiant Intensity vs. Ambient Temperature Forward Current Derating Curve Confidential A ll data sheet.com

© 2018 Kingbright. All Rights Reserved. Spec No: DSAO8741 / 1203002282 Rev No: V.3B Date: 01/19/2018 Page 4 / 4 PACKING & LABEL SPECIFICATIONS APTD3216SF4C-P22 PRECAUTIONARY NOTES 1. The information included in this document reflects representative usage scenarios and is intended for technical reference on ly. 2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to the latest datasheet for the updated specifications. 3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues. 4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance. 5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright. 6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes Confidential A ll data sheet.com