APM9932 ANPEC | Alldatasheet

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  • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. SO-8 8S1 G2 D2 D1 D1 APM9932/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM9932/C K : APM9932/C XXXXX XXXXX - Date Code N-Channel MOSFET P-Channel MOSFET D2 D2 APM9932 SO-8 8S1 G2 D D D D D APM9932C N- and P-Channel MOSFET

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw2 APM9932/C APM9932/CSymbol Parameter Test Condition Min. Typ. Max. Unit Static N-Ch 20 BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA P-Ch -20 V VDS=18V , VGS=0V N-Ch 1 IDSS Zero Gate Voltage Drain Current VDS=-18V , VGS=0V P-Ch -1 µA VDS=VGS , IDS=250µA N-Ch 0.6 1.3VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA P-Ch -0.6 -1.3 V VGS=±16V , VDS=0V N-Ch ±100IGSS Gate Leakage Current VGS=±12V , VDS=0V P-Ch ±100 nA VGS=10V , IDS=9A 12 18 VGS=4.5V , IDS=7A N-Ch 17 27 VGS=-4.5V , IDS=-6A 30 42 RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V , IDS=-5A P-Ch 45 60 mΩ ISD=5A , VGS=0V N-Ch 0.6 1.3VSD a Diode Forward Voltage ISD=-2A , VGS=0V P-Ch -0.6 -1.3 V Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter N-Channel P-Channel Unit VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±16 ±12 V ID * Maximum Drain Current – Continuous 15 -6 IDM Maximum Drain Current – Pulsed 30 -10 A TA=25°C 2.5 2.5 PD Maximum Power Dissipation TA=100°C 1.0 1.0 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw3 APM9932/C Notes a : Guaranteed by design, not subject to production testing Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM9932/CSymbol Parameter Test Condition Min. Typ. Max. Unit Dynamica N-Ch 14 22Qg Total Gate Charge P-Ch 19 25 N-Ch 5Qgs Gate-Source Charge P-Ch 4.1 N-Ch 2.8Qgd Gate-Drain Charge N-Channel VDS=10V , IDS= 6A VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V P-Ch 1.6 nC N-Ch 61 2td(ON) Turn-on Delay Time P-Ch 23 45 N-Ch 51 0Tr Turn-on Rise Time P-Ch 45 80 N-Ch 16 40td(OFF) Turn-off Delay Time P-Ch 45 90 N-Ch 52 0Tf Turn-off Fall Time N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10Ω P-Channel VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10Ω P-Ch 32 55 ns N-Ch 1225Ciss Input Capacitance P-Ch 1400 N-Ch 330Coss Output Capacitance P-Ch 520 N-Ch 220Crss Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz P-Ch 320 pF

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw4 APM9932/C 0 4 8 1 21 62 0 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02468 1 0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Typical Characteristics VGS=2.5V ID-Drain Current (A) Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current ID - Drain Current (A) VGS=4.5V Output Characteristics ID-Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS=10V VGS=2V N-Channel

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw5 APM9932/C 0123456789 1 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 5 10 15 20 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Typical Characteristics (Cont.) VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature VGS=10V ID=15A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=6A N-Channel ID=15A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw6 APM9932/C 0.1 0.01 0.1 1 10 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE N-Channel

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw7 APM9932/C 0123456789 1 0 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 012345678 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Typical Characteristics -ID-Drain Current (A) Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current -ID - Drain Current (A) -VGS=2.5V Output Characteristics -ID-Drain Current (A) -VDS - Drain-to-Source Voltage (V) -VGS=4.5V -VGS=2V P-Channel

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw8 APM9932/C 02468 1 0 400 800 1200 1600 2000 048 1 2 1 6 2 0 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 123456789 1 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 Typical Characteristics (Cont.) -VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature -VGS=4.5V -ID=6A TJ - Junction Temperature (°C) -VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss Gate Charge QG - Gate Charge (nC) -VGS-Gate-Source Voltage (V) -VDS=4V -ID=1A P-Channel -ID=6A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw9 APM9932/C 0.1 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.01 0.1 1 10 Source-Drain Diode Forward Voltage -IS-Source Current (A) TJ=150°C TJ=25°C -VSD -Source-to-Drain Voltage (V) Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE P-Channel

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw10 APM9932/C Packaging Information Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw11 APM9932/C Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw12 APM9932/C Carrier Tape & Reel Dimensions A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program Application A B C J T1 T2 W P E 330 ± 16 2 + 1 . 5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8

Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 www.anpec.com.tw13 APM9932/C Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500