APM9435 ANPEC | Alldatasheet

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Technical content

Features

Applications

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SO − 8
  • -30V/-4.6A, RDS(ON) = 52mΩ (typ.) @ VGS = -10V R DS(ON) = 80mΩ (typ.) @ VGS = -4.5V
  • •••• Super High Density Cell Design
  • •••• Reliable and Rugged Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V ID Maximum Drain Current – Continuous TA = 25°C -4.6 IDM Maximum Drain Current – Pulsed -20 A Absolute Maximum Ratings (TA = 25°C unless otherwise noted) S S GD D D D P-Channel MOSFET G D SSS DD D APM9435 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel APM9435 APM9435 XXXXX XXXXX - Date Code

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw2 Symbol Parameter Rating Unit TA = 25°C 2.5PD Maximum Power Dissipation TA = 100 °C 1.0 W TJ/G41TSTG Maximum Operating and Storage Junction Temperature -55 to 150 °C RθJA Thermal Resistance - Junction to Ambient 50 °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) APM9435Symbol Parameter Test Condition Min. Typ a. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -30 V IDSS Zero Gate Voltage Drain Current V DS=24V, VGS=0V -1 uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA -1 -3 V IGSS Gate Leakage Current V GS=±25V, VDS =0V ±100 nA VGS=-10V, ID=-4.6A 52 60 RDS(ON) Drain-Source On-state Resistance b VGS=-4.5V, ID=-2A 80 95 mΩ VSD Diode Forward Voltage b ISD=-3A, V GS=0V -0.6 -1.3 V Dynamic a Qg Total Gate Charge 22.5 29 Qgs Gate-Source Charge 4.5 Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, ID=-4.6A nC td(ON) Turn-on Delay Time 8 17 tr Turn-on Rise Time 8 18 td(OFF) Turn-off Delay Time 35 60 tf Turn-off Fall Time VDD=-25V, RL=12.5Ω , ID=-2A , V GEN=-10V, RG=6Ω , 11 28 ns Ciss Input Capacitance 845 Coss Output Capacitance 120 Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V Frequency = 1.0MHZ pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw3 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 02468 1 0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 012345 Typical Characteristics TJ=-55°C TJ=25°C TJ=125°C -ID-Drain Current (A) Transfer Characteristics -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) On-Resistance vs. Drain Current -VGS=4.5V -ID - Drain Current (A) -VGS=10V RDS(on)-On-Resistance (Ω ) -IDS=250µA Output Characteristics -ID-Drain Current (A) -VDS - Drain-to-Source Voltage (V) -VGS=4V -VGS=5,6,7,8,9,10V -VGS=3V

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw4 0 5 10 15 20 25 30 200 400 600 800 1000 1200 123456789 1 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical Characteristics -VGS - Gate-to-Source Voltage (V) RDS(on)-On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage RDS(on)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature TJ - Junction Temperature (°C) -VGS=10V -ID=4.6A -VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Gate Charge QG - Gate Charge (nC) -VGS-Gate-Source Voltage (V) -VDS=15V -IDS=4.6A -ID=4.6A Frequency=1MHz Crss Coss Ciss

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw5 0.01 0.1 1 10 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.1 Typical Characteristics Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient D= 0.02 Duty Cycle = 0.5 D= 0.2 D= 0.1 D= 0.05 SINGLE PULSE Power (W) Source-Drain Diode Forward Voltage -VSD-Source-to-Drain Voltage (V ) -IS-Source Current (Α ) TJ=150°C TJ=25°C 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw6 Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012) Packaging Information

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw7 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw8 Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E 330 ± 1 62 +1.5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8 A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 APM9435 www.anpec.com.tw9 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500