APM9430 ANPEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

Applications

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SO − 8
  • 20V/4A, RDS(ON) = 40mΩ (typ.) @ VGS = 4.5V R DS(ON) = 110mΩ (typ.) @ VGS = 2.5V
  • •••• Super High Density Cell Design
  • •••• Reliable and Rugged Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 V ID Maximum Drain Current – Continuous TA = 25°C 4 IDM Maximum Drain Current – Pulsed 15 A Absolute Maximum Ratings (TA = 25°C unless otherwise noted) S S GD D D D N-Channel MOSFET APM9430 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel APM9430 APM9430 XXXXX XXXXX - Date Code G D DD D SSS

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw2 Symbol Parameter Rating Unit TA = 25°C 2.5PD Maximum Power Dissipation TA = 100°C 1.0 W TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 °C RθJA Thermal Resistance - Junction to Ambient 50 °C/W Electrical Characteristics (TA=25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) APM9430Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , I DS=250µA 20 V IDSS Zero Gate Voltage Drain Current VDS=18V , V GS=0V 1 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250µA 0.7 0.9 1.5 V IGSS Gate Leakage Current VGS=±16V , V DS=0V ±100 nA VGS=4.5V , I DS=4A 40 54RDS(ON) a Drain-Source On-state Resistance VGS=2.5V , I DS=2A 110 130 mΩ VSD a Diode Forward Voltage I SD=2A , V GS=0V 0.75 1.3 V Dynamic b Qg Total Gate Charge 6.6 13 Qgs Gate-Source Charge 2.8 Qgd Gate-Drain Charge VDS=10V , V GS=4.5V , ID=1A nC td(ON) Turn-on Delay Time 13 26 Tr Turn-on Rise Time 20 45 td(OFF) Turn-off Delay Time 50 110 Tf Turn-off Fall Time VDD=10V , I D=1A , VGEN=4.5V , R G=0.2Ω 20 85 ns Ciss Input Capacitance 450 Coss Output Capacitance 100 Crss Reverse Transfer VGS=0V , V DS=15V Frequency=1.0MHz pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw3 012345678 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.0 2.5 5.0 7.5 10.0 12.5 15.0 012345678 0.0 2.5 5.0 7.5 10.0 12.5 15.0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 Typical Characteristics TJ=-55°C TJ=25°C TJ=125°C ID-Drain Current (A) Transfer Characteristics VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) On-Resistance vs. Drain Current VGS=2.5V ID - Drain Current (A) VGS=4.5V RDS(on)-On-Resistance (Ω ) IDS=250µA Output Characteristics ID-Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS=2.5V VGS=2V VGS=3V

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw4 0123456789 1 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 02468 1 0 1 2 0 5 10 15 20 125 250 375 500 625 750 -50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8 Typical Characteristics (Cont.) VGS - Gate-to-Source Voltage (V) RDS(on)-On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage ID=4A RDS(on)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature TJ - Junction Temperature (°C) VGS=4.5V ID=4A Crss VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VD=10V ID=1A Ciss Coss Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw5 0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 0.1 Typical Characteristics (Cont.) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient D= 0.02 Duty Cycle = 0.5 D= 0.2 D= 0.1 D= 0.05 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted Power (W) Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V ) IS-Source Current (Α ) TJ=150°C TJ=25°C

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw6 Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012) Packaging Information

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw7 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw8 Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E 330 ± 1 62 +1.5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8 A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9430 www.anpec.com.tw9 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500