APM7313KC-TU

APM7313K ANPEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

Applications

Ordering and Marking Information N-Channel MOSFET APM7313 Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM7313 K : APM7313 XXXXX XXXXX - Date Code Lead Free Code

• 30V/6A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant) Top View of SOP − 8 D1 D1 (8) (7) (2) (1) D2 D2 (6) (5) (4) (3) Note: ANPEC lead-free products contain m olding com pounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw2 APM7313K Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID* Continuous Drain Current 6 IDM* 300µs Pulsed Drain Current VGS=10V A IS* Diode Continuous Forward Current 3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD* Maximum Power Dissipation TA=100°C 0.8 W Rθ JA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. APM7313K Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TA=25°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.5 2 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=10V, IDS=6A 21 28 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=2A 27 42 mΩ VSD a Diode Forward Voltage ISD=2A, VGS=0V 0.7 1.3 V Gate Charge Characteristics b Qg Total Gate Charge 19 25 Qgs Gate-Source Charge 1.6 Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=6A 3.6 nC

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw3 APM7313K Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM7313K Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.1 Ω Ciss Input Capacitance 835 Coss Output Capacitance 150 Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 105 pF td(ON) Turn-on Delay Time 7 13 Tr Turn-on Rise Time 8 15 td(OFF) Turn-off Delay Time 28 40 Tf Turn-off Fall Time VDD=15V, RL=15Ω , IDS=1A, VGEN=10V, RG=6Ω 6 9 ns Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw4 APM7313K Typical Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25o C 0 20 40 60 80 100 120 140 160 TA=25o C,VG=10V 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in2 pad Rθ JA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.01 0.1 1 10 100 0.01 0.1 100 1ms Rds(on) Limit TA=25o C 10ms 100ms DC

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw5 APM7313K RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Normalized Threshold Voltage Typical Characteristics (Cont.) 0 1 2 3 4 5 3.5V 2.5V 0 4 8 12 16 20 24 VGS= 10V VGS= 4.5V 0 1 2 3 4 5 Tj=125o C Tj=25o C Tj=-55o C -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 IDS= 250µΑ

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw6 APM7313K VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RON@Tj=25o C: 21mΩ VGS = 10V IDS = 6A 0.1 Tj=125o C Tj=25o C 0 4 8 12 16 20 VDS= 15V ID= 6A 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 Frequency=1MHz Crss Coss Ciss

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw7 APM7313K Packaging Information Millimeters Inches Dim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw8 APM7313K Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin T L TP Temperature Time Critical Zone TL to T P Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Physical Specifications Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Copyright  ANPEC Electronics Corp. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level.

Copyright  ANPEC Electronics Corp. Rev. B.3 - Nov., 2005 www.anpec.com.tw10 APM7313K Customer Service Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500 Carrier Tape & Reel Dimensions(Cont.) A J B C Application A B C J T1 T2 W P E 330±1 62 ± 1.5 12.75 + 0.1 5 - 0.1 8± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t SOP-8 (mm) Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369