APM7312 ANPEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

Applications

  • 20V/6A , RDS(ON)=35mΩ (typ.) @ VGS=10V R DS(ON)=45mΩ (typ.) @ VGS=4.5V R DS(ON)=110mΩ (typ.) @ VGS=2.5V
  • •••• Super High Dense Cell Design for Extremely Low RDS(ON)
  • •••• Reliable and Rugged
  • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. 8S1 G2 D2 SO-8 Top View N-Channel MOSFET D1 D1 D2 D2 APM7312 Handling Code Temp. Range Package Code Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM7312 K : APM7312 XXXXX XXXXX - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 V ID * Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 A * Surface Mounted on FR4 Board, t ≤ 10 sec.

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw2 APM7312 Symbol Parameter Rating Unit TA=25°C 2.5PD Maximum Power Dissipation TA=100°C 1.0 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. APM7312Symbol Parameter Test Condition Min. T yp. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , I DS=250 µ A 20 V IDSS Zero Gate Voltage Drain Current VDS=18V , V GS=0V 1 µ A VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250 µ A 0.7 0.9 1.5 V IGSS Gate Leakage Current VGS=±16V , V DS=0V ±100 nA VGS=10V , I DS=6A 35 40 VGS=4.5V , I DS=4A 45 54RDS(ON) a Drain-Source On-state Resistance VGS=2.5V , I DS=2A 110 120 mΩ VSD a Diode Forward Voltage I SD=1.7A , V GS=0V 0.7 1.3 V Dynamic b Qg Total Gate Charge 12 16 Qgs Gate-Source Charge 3 Qgd Gate-Drain Charge VDS=10V , I DS= 6A VGS=4.5V , 4.5 nC td(ON) Turn-on Delay Time 61 2 Tr Turn-on Rise Time 51 0 td(OFF) Turn-off Delay Time 16 40 Tf Turn-off Fall Time VDD=10V , I DS=1A , VGEN =4.5V , R G=0.2 Ω 52 0 ns Ciss Input Capacitance 450 Coss Output Capacitance 100 Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 60 pF Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw3 APM7312 012345678 Typical Characteristics VGS=2V ID-Drain Current (A) Transfer Characteristics TJ=-55°C TJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA Output Characteristics ID-Drain Current (A) VGS=3V VDS - Drain-to-Source Voltage (V) 0 5 10 15 20 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current VGS=4.5V ID - Drain Current (A) VGS=10V

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw4 APM7312 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical Characteristics (Cont.) RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature VGS=4.5V ID=6A TJ - Junction Temperature (°C) 0 5 10 15 20 125 250 375 500 625 750 VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=6A 123456789 1 0 0.00 0.02 0.04 0.06 0.08 0.10 VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) ID=6A On-Resistance vs. Gate-to-Source Voltage Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw5 APM7312 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics (Cont.) 0.01 0.1 1 10 Power (W) Single Pulse Power Time (sec) 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw6 APM7312 Packaging Information Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw7 APM7312 Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5 °C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0 °C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25 °C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw8 APM7312 Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E SOP-8 330±1 62 ± 1.5 12.75 + 0.1 5 - 0 . 1 8± 0.1 1.75 ± 0.1 Application F D D1 Po P1 Ao Bo Ko t (mm) A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability Test Program

Copyright  ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 www.anpec.com.tw9 APM7312 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500