APM4835 ANPEC | Alldatasheet

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Technical content

Features

Applications

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SO − 8
  • -30V/-8A, RDS(ON) = 16mΩ (typ.) @ VGS = -10V R DS(ON) = 24mΩ (typ.) @ VGS = -4.5V
  • •••• Super High Density Cell Design
  • •••• Reliable and Rugged Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V ID * Maximum Drain Current – Continuous TA = 25°C -8 IDM Maximum Drain Current – Pulsed -50 A *Surface Mounted on FR4 Board, t ≤ 10 sec. Absolute Maximum Ratings (TA = 25°C unless otherwise noted) S S GD D D D P-Channel MOSFET G D SSS DD D APM4835 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel APM4835 APM4835 XXXXX XXXXX - Date Code

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw2 Symbol Parameter Rating Unit TA = 25°C 2.5PD Maximum Power Dissipation TA = 100°C 1 W TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 °C RθJA Thermal Resistance - Junction to Ambient 50 °C/W Electrical Characteristics (TA=25°C unless otherwise noted) Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) APM4835Symbol Parameter Test Condition Min. Typ a. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID= -250µA -30 V IDSS Zero Gate Voltage Drain Current V DS= -30V, VGS=0V -1 µA VGS(th) Gate Threshold Voltage VDS=VGS, ID= -250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS= ±25V , V DS=0V ±100 nA VGS= -10V, ID= -8A 16 19 RDS(ON) Drain-Source On-state Resistance b VGS= -4.5V, ID= -5A 24 30 mΩ VSD Diode Forward Voltage b ISD= -3A, V GS=0V -0.7 -1.3 V Dynamic a Qg Total Gate Charge 48 60 Qgs Gate-Source Charge 10 Qgd Gate-Drain Charge VDS= -15V, VGS= -10V, ID= -4.6A nC td(ON) Turn-on Delay Time 16 30 tr Turn-on Rise Time 17 30 td(OFF) Turn-off Delay Time 75 120 tf Turn-off Fall Time VDD= -25V, ID= -2A, VGEN= -10V, RG=6Ω RL=12.5Ω 31 80 ns Ciss Input Capacitance 3800 Coss Output Capacitance 590 Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V Frequency = 1.0MHZ 250 pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw3 012345 Typical Characteristics TJ=-55°CTJ=25°C TJ=125°C -ID-Drain Current (A) Transfer Characteristics -VGS - Gate-to-Source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) 0 1 02 03 04 05 0 0.00 0.01 0.02 0.03 0.04 0.05 On-Resistance vs. Drain Current -VGS=4.5V -ID - Drain Current (A) -VGS=10V RDS(on)-On-Resistance (Ω ) -IDS=250µA 02468 1 0 Output Characteristics -ID-Drain Current (A) -VDS - Drain-to-Source Voltage (V) -VGS=3V

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw4 02468 1 00.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 Typical Characteristics (Cont.) -VGS - Gate-to-Source Voltage (V) RDS(on)-On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage -ID=8A -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RDS(on)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature TJ - Junction Temperature (°C) -VGS=10V -ID=8A 0 6 12 18 24 30 900 1800 2700 3600 4500 Ciss Crss Coss -VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) 0 1 02 03 04 05 0 Gate Charge QG - Gate Charge (nC) -VGS-Gate-Source Voltage (V) -VDS=15V -ID=4.6A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw5 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.01 0.1 1 10 100 Typical Characteristics (Cont.) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient D= 0.02 Duty Cycle = 0.5 D= 0.2 D= 0.1 D= 0.05 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 0.1 Power (W) Source-Drain Diode Forward Voltage -VSD-Source-to-Drain Voltage (V ) -IS-Source Current (Α ) TJ=150°C TJ=25°C

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw6 Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012) Packaging Information

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw7 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw8 Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E 330 ± 1 62 +1.5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8 A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM4835 www.anpec.com.tw9 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500