APM4542KC-TU

APM4542K ANPEC | Alldatasheet

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Technical content

/G44/G75/G61/G6C/G20/G45/G6E/G68/G61/G6E/G63/G65/G6D/G65/G6E/G74/G20/G4D/G6F/G64/G65/G20/G4D/G4F/G53/G46/G45/G54/G20/G28/G4E/G2D/G61/G6E/G64/G20/G50/G2D/G43/G68/G61/G6E/G6E/G65/G6C/G29 /G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31 /G41/G4E/G50/G45/G43/G20/G72/G65/G73/G65/G72/G76/G65/G73/G20/G74/G68/G65/G20/G72/G69/G67/G68/G74/G20/G74/G6F/G20/G6D/G61/G6B/G65/G20/G63/G68/G61/G6E/G67/G65/G73/G20/G74/G6F/G20/G69/G6D/G70/G72/G6F/G76/G65/G20/G72/G65/G6C/G69/G61/G62/G69/G6C/G69/G74/G79/G20/G6F/G72/G20/G6D/G61/G6E/G75/G66/G61/G63/G74/G75/G72/G61/G62/G69/G6C/G69/G74/G79/G20/G77/G69/G74/G68/G6F/G75/G74/G20/G6E/G6F/G74/G69/G63/G65/G2C/G20/G61/G6E/G64/G20/G61/G64/G76/G69/G73/G65 /G63/G75/G73/G74/G6F/G6D/G65/G72/G73/G20/G74/G6F/G20/G6F/G62/G74/G61/G69/G6E/G20/G74/G68/G65/G20/G6C/G61/G74/G65/G73/G74/G20/G76/G65/G72/G73/G69/G6F/G6E/G20/G6F/G66/G20/G72/G65/G6C/G65/G76/G61/G6E/G74/G20/G69/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E/G20/G74/G6F/G20/G76/G65/G72/G69/G66/G79/G20/G62/G65/G66/G6F/G72/G65/G20/G70/G6C/G61/G63/G69/G6E/G67/G20/G6F/G72/G64/G65/G72/G73/G2E /G41/G50/G4D/G34/G35/G34/G32/G4B /G46/G65/G61/G74/G75/G72/G65/G73 /G41/G70/G70/G6C/G69/G63/G61/G74/G69/G6F/G6E/G73

• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems /G50/G69/G6E/G20/G44/G65/G73/G63/G72/G69/G70/G74/G69/G6F/G6E /G4F/G72/G64/G65/G72/G69/G6E/G67/G20/G61/G6E/G64/G20/G4D/G61/G72/G6B/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E N-Channel MOSFET APM4542 Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4542 K : APM4542 XXXXX XXXXX - Date Code Lead Free Code
• N-Channel 30V/7A, RDS(ON) =17m Ω (typ.) @ VGS = 10V RDS(ON) =22m Ω (typ.) @ VGS = 4.5V -30V/-5.5A, RDS(ON) =35m Ω (typ.) @ VGS =-10V RDS(ON) =51m Ω (typ.) @ VGS =-4.5V
• •••• Super High Dense Cell Design
• •••• Reliable and Rugged
• •••• Lead Free Available (RoHS Compliant) P-Channel MOSFET Top View of SOP − 8 D1 D1 (8) (7) (2) (1) (4) (3) (5) (6) Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica- tion at lead-free peak reflow temperature.

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G32 /G41/G50/G4D/G34/G35/G34/G32/G4B /G41/G62/G73/G6F/G6C/G75/G74/G65/G20/G4D/G61/G78/G69/G6D/G75/G6D/G20/G52/G61/G74/G69/G6E/G67/G73 (TA = 25°C unless otherwise noted) /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G20(TA = 25°C unless otherwise noted) Symbol Parameter N Channel P Channel Unit VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 V ID * Continuous Drain Current 7 -5.5 IDM * Pulsed Drain Current VGS =/GB110V 28 -22 A IS* Diode Continuous Forward Current 2 -2 A TJ Maximum Junction Temperature 150/G20 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD * Power Dissipation TA=100°C 0.8 W R θJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec./G20 APM4542K Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VGS =0V, IDS =250µA N-Ch 30 BV DSS Drain-Source Breakdown Voltage VGS =0V, IDS =-250µA P-Ch -30 V VDS =24V, VGS =0V 1 TJ=85°C N-Ch VDS =-24V, VGS =0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C P-Ch -30 µA VDS =VGS , IDS =250µA N-Ch 1 1.5 2 VGS(th) Gate Threshold Voltage VDS =VGS , IDS =-250µA P-Ch /G31/G20-1.5 -2 V N-Ch /G20 ±100 IGSS Gate Leakage Current VGS =±20V, VDS =0V P-Ch /G20 ±100 nA VGS =10V, IDS =7A N-Ch 17 24 VGS =-10V, IDS =-5.5A P-Ch 35 56 VGS =4.5V, IDS =5A N-Ch 22 30 R DS(ON) a Drain-Source On-State Resistance VGS =-4.5V, IDS =-4A P-Ch 51 78 m Ω /G20

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G33 /G41/G50/G4D/G34/G35/G34/G32/G4B /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29/G20/G20(TA = 25°C unless otherwise noted) APM4542K Symbol Parameter Test Condition Min. Typ. Max. Unit Diode Characteristics ISD =2A, VGS =0V N-Ch 0.7 1.3 VSD a Diode Forward Voltage ISD =-2.3A, VGS =0V P-Ch -1.7 -1.3 V Dynamic Characteristics b N-Ch 2 R G Gate Resistance V GS =0V,VDS =0V,F=1MHz P-Ch 11 Ω N-Ch 835 C iss Input Capacitance P-Ch 950 N-Ch 145 C oss Output Capacitance P-Ch 160 N-Ch 15 C rss Reverse Transfer Capacitance N-Channel VGS =0V, VDS =25V, Frequency=1.0MHz P-Channel V GS =0V, VDS =-25V, P-Ch 110 pF N-Ch 11 20 td(ON) Turn-on Delay Time P-Ch 12 24 N-Ch 17 28 Tr Turn-on Rise Time P-Ch 15 29 N-Ch 36 62 td(OFF) Turn-off Delay Time P-Ch 35 60 N-Ch 20 36 Tf Turn-off Fall Time N-Channel VDD =15V, RL=15Ω , IDS =1A, VGEN =10V, R G =6Ω P-Channel V DD =-15V, RL=15Ω , IDS =-1A, VGEN =-10V, R G =6Ω P-Ch 15 30 ns Gate Charge Characteristics b N-Ch 19 25 Q g Total Gate Charge P-Ch 33 43 N-Ch 1.6 Q gs Gate-Source Charge P-Ch 5 N-Ch 3.6 Q gd Gate-Drain Charge N-Channel VDS =15V, VGS =10V, IDS =7A P-Channel VDS =-15V, VGS =-10V, IDS =-5.5A P-Ch 4 nC /G20Notes::::: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G34 /G41/G50/G4D/G34/G35/G34/G32/G4B 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R θJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73 ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) N-Channel 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.5 1.0 1.5 2.0 2.5 TA=25 o C 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TA=25 o C,VG =10V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 O C 10ms 300µs 1ms 100ms DC Normalized Transient Thermal Resistance

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G35 /G41/G50/G4D/G34/G35/G34/G32/G4B R DS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Normalized Threshold Voltage /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 012345 0 5 10 15 20 25 30 VGS =10V VGS =4.5V 012345 Tj=125 o C Tj=25 o C Tj=-55 o C -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA N-Channel

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G36 /G41/G50/G4D/G34/G35/G34/G32/G4B VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge Q G - Gate Charge (nC) VGS - Gate - source Voltage (V) /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 N-Channel -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 R ON @T j=25 o C: 17mΩ VGS = 10V IDS = 7A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 Frequency=1MHz Crss Coss Ciss 0 4 8 1 21 62 00 VDS =15V IDS =7A

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G37 /G41/G50/G4D/G34/G35/G34/G32/G4B 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R θJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) -ID - Drain Current (A) P-Channel 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.5 1.0 1.5 2.0 2.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TA=25 o C,VG =-10V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 O C 10ms 1ms 100ms DC Normalized Transient Thermal Resistance

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G38 /G41/G50/G4D/G34/G35/G34/G32/G4B /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 R DS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A)-VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold VoltageTransfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) Normalized Threshold Voltage -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 IDS = -250µΑ 02468 1 0 -4V -3V P-Channel 048 1 2 1 6 2 0 2 4 VGS = -4.5V VGS = -10V 012345 Tj=125 o C Tj=25 o C Tj=-55 o C

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G39 /G41/G50/G4D/G34/G35/G34/G32/G4B /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) -VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge Q G - Gate Charge (nC) -VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 R ON @T j=25 o C: 35mΩ VGS = -10V IDS = -5.5A 0 5 10 15 20 25 30 35 VDS = -10V ID= -5.5A P-Channel 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 250 500 750 1000 1250 1500 Frequency=1MHz Crss Coss Ciss

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31/G30 /G41/G50/G4D/G34/G35/G34/G32/G4B /G50/G61/G63/G6B/G61/G67/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31/G31 /G41/G50/G4D/G34/G35/G34/G32/G4B Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. /G20 t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin T L T P Temperature Time Critical Zone T L to TP °/G20 /G52/G65/G66/G6C/G6F/G77/G20/G43/G6F/G6E/G64/G69/G74/G69/G6F/G6E/G20(IR/Convection or VPR Reflow) /G43/G6C/G61/G73/G73/G69/G66/G69/G63/G61/G74/G69/G6F/G6E/G20/G52/G65/G66/G6C/G6F/G77/G20/G50/G72/G6F/G66/G69/G6C/G65/G73 /G50/G68/G79/G73/G69/G63/G61/G6C/G20/G53/G70/G65/G63/G69/G66/G69/G63/G61/G74/G69/G6F/G6E/G73 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3 °C/second max. Preheat /G2D/G20Temperature Min (Tsmin) /G2D/G20Temperature Max (Tsmax) /G2D/G20Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: /G2D/G20Temperature (TL) /G2D/G20Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Table 2. Pb-free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0 °C) at the rated MSL level.

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31/G33 /G41/G50/G4D/G34/G35/G34/G32/G4B /G43/G75/G73/G74/G6F/G6D/G65/G72/G20/G53/G65/G72/G76/G69/G63/G65 Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 /G43/G6F/G76/G65/G72/G20/G54/G61/G70/G65/G20/G44/G69/G6D/G65/G6E/G73/G69/G6F/G6E/G73 Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500 /G43/G61/G72/G72/G69/G65/G72/G20/G54/G61/G70/G65/G20/G26/G20/G52/G65/G65/G6C/G20/G44/G69/G6D/G65/G6E/G73/G69/G6F/G6E/G73/G28/G43/G6F/G6E/G74/G2E/G29 A J B C Application A B C J T1 T2 W P E 330±1 62 ± 1.5 12.75 + 0.1 5 - 0.1 8± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t SOP-8 (mm)