APM4500 ANPEC | Alldatasheet
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- Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. SO-8 8S1 G2 D2 D1 D1 APM4500 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM4500 K : APM4500 XXXXX XXXXX - Date Code N-Channel MOSFET P-Channel MOSFET D2 D2
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw2 APM4500 APM4500Symbol Parameter Test Condition Min. Typ. Max. Unit Static N-Ch 20 BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA P-Ch -20 V VDS=16V , VGS=0V N-Ch 1 IDSS Zero Gate Voltage Drain Current VDS=-16V , VGS=0V P-Ch -1 µA VDS=VGS , IDS=250µA N-Ch 0.5 0.7 1VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA P-Ch -0.45 -1 V VGS=±12V , VDS=0V N-Ch ±100IGSS Gate Leakage Current VGS=±12V , VDS=0V P-Ch ±100 nA VGS=4.5V , IDS=8A 22 26 VGS=2.5V , IDS=5.2A N-Ch 30 36 VGS=-4.5V , IDS=-4.3A 80 90 RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V , IDS=-2A P-Ch 105 115 mΩ ISD=1.7A , VGS=0V N-Ch 0.8 1.3VSD a Diode Forward Voltage ISD=-1.25A , VGS=0V P-Ch -0.7 -1.3 V Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter N-Channel P-Channel Unit VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±12 ±12 V ID * Maximum Drain Current – Continuous 8 -4.3 IDM Maximum Drain Current – Pulsed 35 -17 A TA=25°C 2.5 2.5 PD Maximum Power Dissipation TA=100°C 1.0 1.0 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 62.5 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw3 APM4500 Notes b : Guaranteed by design, not subject to production testing Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM4500Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamicb N-Ch 10 13Qg Total Gate Charge P-Ch 91 2 N-Ch 3Qgs Gate-Source Charge P-Ch 3 N-Ch 2.5Qgd Gate-Drain Charge N-Channel VDS=10V , IDS= 8A VGS=4.5V P-Channel VDS=-10V , IDS=-3A VGS=-4.5V P-Ch 1 nC N-Ch 16 32td(ON) Turn-on Delay Time P-Ch 13 21.5 N-Ch 40 75Tr Turn-on Rise Time P-Ch 36 56 N-Ch 42 78td(OFF) Turn-off Delay Time P-Ch 45 69.5 N-Ch 20 35Tf Turn-off Fall Time N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=0.2Ω P-Channel VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=6Ω P-Ch 37 57.5 ns N-Ch 675Ciss Input Capacitance P-Ch 510 N-Ch 178Coss Output Capacitance P-Ch 270 N-Ch 105Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz P-Ch 120 pF
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw4 APM4500 02468 1 0 0.00 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 012345678 Typical Characteristics VGS=2.5V ID-Drain Current (A) Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA RDS(ON)-On-Resistance (Ω) On-Resistance vs. Drain Current ID - Drain Current (A) VGS=4.5V Output Characteristics ID-Drain Current (A) VGS=2V VDS - Drain-to-Source Voltage (V) VGS=2.5V VGS=1.5V N-Channel MOSFET
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw5 APM4500 0 4 8 12 16 20 200 400 600 800 1000 123456789 1 0 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 048 1 2 1 6 2 0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical Characteristics (Cont.) VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) ID=8A On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω) (Normalized) On-Resistance vs. Junction Temperature VGS=4.5V ID=8A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=1A Frequency=1MHz Coss Crss
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw6 APM4500 0.01 0.1 1 10 100 0.1 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient D= 0.02 Duty Cycle = 0.5 D= 0.2 D= 0.1 D= 0.05 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw7 APM4500 02468 1 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0123456789 1 0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Typical Characteristics -ID-Drain Current (A) Transfer Characteristics TJ=-55°C TJ=25°C TJ=125°C -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA RDS(ON)-On-Resistance (Ω) On-Resistance vs. Drain Current -VGS=2.5V -ID - Drain Current (A) -VGS=4.5V -VGS=1V Output Characteristics -ID-Drain Current (A) -VGS=3,4.5,6,7,8V -VGS=2V -VDS - Drain-to-Source Voltage (V) -VGS=1.5V P-Channel MOSFET
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw8 APM4500 12345678 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 02468 1 0 0 5 10 15 20 100 200 300 400 500 600 700 800 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Typical Characteristics (Cont.) RDS(ON)-On-Resistance (Ω) (Normalized) On-Resistance vs. Junction Temperature -VGS=4.5V -ID=4.3A TJ - Junction Temperature (°C) -VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss -VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) -ID=4.3A On-Resistance vs. Gate-to-Source Voltage Gate Charge QG - Gate Charge (nC) -VGS-Gate-Source Voltage (V) -VDS=10V -ID=3A Frequency=1MHz
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw9 APM4500 0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Source-Drain Diode Forward Voltage -IS-Source Current (A) TJ=150°C TJ=25°C -VSD -Source-to-Drain Voltage (V) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5°C/W 3.T JM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSED=0.01
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw10 APM4500 Packaging Information Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw11 APM4500 Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw12 APM4500 Carrier Tape & Reel Dimensions A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program Application A B C J T1 T2 W P E 330 ± 16 2 + 1 . 5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8
Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 www.anpec.com.tw13 APM4500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500