APM4429K ANPEC | Alldatasheet
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- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Pin Description Ordering and Marking Information P-Channel MOSFET APM4429 Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4429 K : XXXXX - Date Code Lead Free Code APM4429 XXXXX
- -30V/-12A , RDS(ON)=9mΩ (typ.) @ VGS=-20V RDS(ON)=10mΩ (typ.) @ VGS=-10V RDS(ON)=12mΩ (typ.) @ VGS=-4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- SOP-8 Package
- Lead Free Available (RoHS Compliant) Top View of SOP − 8 ( 1, 2, 3 ) D G D S S (4) (5,6,7,8) S D D Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw2 APM4429K Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 V ID* Continuous Drain Current -12 IDM* Pulsed Drain Current VGS=-20V -50 A IS* Diode Continuous Forward Current -1.5 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD* Maximum Power Dissipation TA=100°C 0.8 W Rθ JA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. APM4429K Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=-20V, IDS=-12A 9 12 VGS=-10V, IDS=-12A 10 13 RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-8A 12 16 mΩ VSD a Diode Forward Voltage ISD=-3A, VGS=0V -0.8 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 80 104 Qgs Gate-Source Charge 14 Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-12A nC
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw3 APM4429K Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM4429K Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 4 Ω Ciss Input Capacitance 2760 Coss Output Capacitance 430 Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V, Frequency=1.0MHz 285 pF td(ON) Turn-on Delay Time 18 33 Tr Turn-on Rise Time 19 35 td(OFF) Turn-off Delay Time 103 186 Tf Turn-off Fall Time VDD=-15V, RL=15Ω , IDS=-1A, VGEN=-10V, RG=6Ω 48 87 ns trr Reverse Recovery Time 26 ns Qrr Reverse Recovery Charge ISD=-12A, dISD/dt=100A/µs 10 nC Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing .
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw4 APM4429K Typical Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25o C 0 20 40 60 80 100 120 140 160 TA=25o C,VG=-20V 0.01 0.1 1 10 100 0.01 0.1 100 300us 1ms Rds(on) Limit TA=25o C 10ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in2 pad Rθ JA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw5 APM4429K RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) Typical Characteristics (Cont.) -3V -2.5V -2V 0 10 20 30 40 50 VGS= -20V VGS= -10V VGS= -4.5V Tj=-55o C Tj=125o C Tj=25o C -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS = -250µA
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw6 APM4429K -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25o C: 9mΩ VGS = -20V IDS = -12A 0.1 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 500 1000 1500 2000 2500 3000 3500 4000 Frequency=1MHz Crss Coss Ciss 0 10 20 30 40 50 60 70 80 VDS= -15V ID = -12A
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw7 APM4429K Packaging Information Millimeters Inches Dim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw8 APM4429K Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Physical Specifications Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level.
Copyright ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 www.anpec.com.tw10 APM4429K Customer Service Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500 Carrier Tape & Reel Dimensions(Cont.) A J B C Application A B C J T1 T2 W P E 330±1 62 ± 1.5 12.75 + 0.1 5 - 0.1 8± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t SOP-8 (mm) Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369