APM4408 ANPEC | Alldatasheet

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  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SO − 8 APM4408 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 125°C Handling Code TU : Tube TR : Tape & Reel APM4408 K : APM4408 XXXXX XXXXX - Date Code
  • 20V/21A, RDS(ON) = 3.5mΩ (typ.) @ VGS = 10V R DS(ON) = 5mΩ (typ.) @ VGS = 4.5V R DS(ON) = 8mΩ (typ.) @ VGS = 2.5V
  • •••• High Density Cell Design
  • •••• Reliable and Rugged Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 V ID * Maximum Drain Current – Continuous 21 IDM Maximum Drain Current – Pulsed 60 A * Surface Mounted on FR4 Board, t ≤ 10 sec. Absolute Maximum Ratings (TA = 25°C unless otherwise noted) N-Channel MOSFET G S D S S GD D D D

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw2 Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit TA=25°C 1.6PD Maximum Power Dissipation TA=100°C 0.625 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθJA Thermal Resistance – Junction to Ambient 80 °C/W APM4408Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , I DS=250 µ A 20 V IDSS Zero Gate Voltage Drain Current VDS=18V , V GS=0V 1 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250 µ A 0.8 1.5 V IGSS Gate Leakage Current VGS=±16V , V DS=0V ±100 nA VGS=10V , I DS=21A 3.5 4.5 VGS=4.5V , I DS=17A 56RDS(ON) a Drain-Source On-state Resistance VGS=2.5V , I DS=10A 81 0 mΩ VSD a Diode Forward Voltage I SD=2.9A , V GS=0V 0.6 1.3 V Dynamic b Qg Total Gate Charge 45 65 Qgs Gate-Source Charge 20 Qgd Gate-Drain Charge VDS=10V , I DS= 21A VGS=4.5V , nC td(ON) Turn-on Delay Time 35 50 Tr Turn-on Rise Time 19 28 td(OFF) Turn-off Delay Time 110 170 Tf Turn-off Fall Time VDD=10V , I DS=1A , VGEN =4.5V , R G=6Ω 60 75 ns Ciss Input Capacitance 5300 Coss Output Capacitance 1000 Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 300 pF N o t e s a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw3 Typical Characteristics 012345 Output Characteristics VDS-Drain-to-Source Voltage (V) IDS-Drain Current (A) VGS=3V 0123456 Transfer Characteristics VGS-Gate-to-Source Voltage (V) IDS-Drain Current (A) TJ=125°C TJ=25°C TJ=-55°C -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Threshold Voltage vs. Junction Temperature Tj-Junction Temperature (°C) IDS=250µA 0 1 02 03 04 05 0 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 On-Resistance vs. Drain Current IDS-Drain Current (A) RDS(ON)-On-Resistance (Ω ) VGS=10V VGS=4.5V VGS(th)-Threshold Voltage (V) (Normalized)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw4 0 5 10 15 20 1000 2000 3000 4000 5000 6000 7000 8000 Typical Characteristics Cont. -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 On-Resistaence vs. Junction Temperature RDS(ON)-On-Resistance (Ω ) (Normalized) Tj-Junction Temperature (°C) VGS=10V IDS=21A 0123456789 1 00.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 On-Resistance vs. Gate-to-Source VoltageRDS (ON)-On-Resistance (Ω ) Gate Voltage (V) IDS=21A Capacitance Characteristics VDS-Drain-to-Source Voltage (V) C-Capacitance (pF) Crss Coss Ciss 0 1 02 03 04 05 06 07 08 09 0 Gate Charge QG-Total Gate Charge (nC) VGS-Gate-to-Source Voltage (V) VDS=10V IDS=21A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw5 Typical Characteristics Cont. Source-Drain Diode Forward Voltage ISD-Source Current (A) VSD-Source to Drain Voltage TJ=25°CTJ=150°C 0.01 0.1 1 10 100 Time (sec) Single Pulse Power Power (W) 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted D=0.02 D=0.05 D=0.1 D=0.2 Duty Cycle=0.5 SINGLE PULSE Normalized Transient Thermal Transient Impedence, Junction to Ambient

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw6 Packaging Information Millimeters InchesDim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° HE e1 e2 0.015X45 D AA1 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw7 Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw8 Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245 °C , 5 SEC HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @ 125 °C PCT JESD-22-B, A102 168 Hrs, 100 % RH , 121 °C TST MIL-STD-883D-1011.9 -65 °C ~ 150 °C, 200 Cycles ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V Latch-Up JESD 78 10m s , I tr > 100mA Carrier Tape A J B C t Ao E W Po P Ko Bo D F Application A B C J T1 T2 W P E 330 ± 1 62 +1.5 12.75+ F D D1 Po P1 Ao Bo Ko tSOP- 8

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 APM4408 www.anpec.com.tw9 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500