APM4350KP ANPEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 11
Technical content
Features
Applications
Ordering and Marking Information N-Channel MOSFET
- 30V/60A, RDS(ON) =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V
- Super High Dense Cell Design
- Avalanche Rated
- Reliable and Rugged
- Lead Free Available (RoHS Compliant) Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica- tion at lead-free peak reflow temperature.
- Power Management in Notebook Computer, or Decktop Computer. G D SSS D D D APM4350 Handling Code Temp. Range Package Code Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4350 KP : APM4350 XXXXX XXXXX - Date Code Lead Free Code S G S S D D D D S G S S D D D D
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw2 APM4350KP Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C 50 A TC=25°C 140 IDP 300µs Pulse Drain Current Tested TC=100°C 80 A Mounted on Large Heat Sink TC=25°C 60 ID Continuous Drain Current TC=100°C 35 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W Rθ JC Thermal Resistance-Junction to Case 2.5 °C/W Mounted on PCB of 1in2 pad area TA=25°C 13.5 ID Continuous Drain Current TA=100°C 8.5 A TA=25°C 2.5 PD Maximum Power Dissipation TA=100°C 1 W Rθ JA Thermal Resistance-Junction to Ambient 50 °C/W Mounted on PCB of Minimum Footprint TA=25°C 10 ID Continuous Drain Current TA=100°°C 6 A TA=25°C 1.5 PD Maximum Power Dissipation TA=100°C 0.5 W Rθ JA Thermal Resistance-Junction to Ambient 75 °C/W
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw3 APM4350KP Electrical Characteristics (TA = 25°C Unless Otherwise Noted) APM4350KP Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V VDS=24V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current Tj=85°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=10V, IDS=30A 7.5 9 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=15A 11.5 14.5 mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=15A, VGS=0V 0.75 1.1 V trr Reverse Recovery Time 11 ns Qrr Reverse Recovery Charge IDS=15A, dlSD/dt=100A/µs 3 nC Gate Charge Characteristics b Qg Total Gate Charge 28 39 Qgs Gate-Source Charge 4 Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=30A nC Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.6 Ω Ciss Input Capacitance 1660 Coss Output Capacitance 260 Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz 170 pF td(ON) Turn-on Delay Time 18 33 tr Turn-on Rise Time 15 28 td(OFF) Turn-off Delay Time 47 86 tf Turn-off Fall Time VDD=15V, RL=15Ω , IDS=1A, VGEN=10V, RG=6Ω 22 41 ns Note： a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw4 APM4350KP Typical Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Normalized Transient Thermal Resistance 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in2 pad Rθ JA :50o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100 120 140 160 TC=25o C 0 20 40 60 80 100 120 140 160 TC=25o C,VG=10V 0.1 1 10 80 0.1 100 400 TC=25o C 1ms 10ms 100ms DC Rds(on) Limit
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw5 APM4350KP RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Normalized Threshold Voltage Typical Characteristics (Cont.) 100 120 5.5V 4.5V 3.5V VGS= 6,7,8,9,10V 0 20 40 60 80 100 120 VGS=10V VGS=4.5V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =250µA 1 2 3 4 5 6 7 8 9 10 ID=30A
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw6 APM4350KP VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) Typical Characteristics (Cont.) 0.2 100 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 500 1000 1500 2000 2500 Frequency=1MHz Crss Coss Ciss -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25o C: 7.5mΩ VGS = 10V IDS = 30A 0 5 10 15 20 25 300 VDS= 15V IDS= 30A
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw7 APM4350KP Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw8 APM4350KP Packaging Information KPAP (Reference JEDEC Registration MS-012) Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 EA e B C F H KG a D Min. Max. Min. Max. A 1.00 1.20 0.039 0.047 B 0.38 0.51 0.015 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.90 6.10 0.232 0.240 E1 5.696 5.796 0.224 0.228 e F 0.052 0.152 0.002 0.006 F1 0.352 0.452 0.014 0.018 G 0.052 0.152 0.002 0.006 G1 0.352 0.452 0.014 0.018 H 3.491 3.691 0.137 0.145 K 1.60 - 0.063 - a 0° 12° 0° 12° Dim 1.27 BSC 0.050 BSC Millimeters Inches
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw9 APM4350KP Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Sn-Pb Eutectic Assembly Pb-Free Assembly Profile Feature Large Body Small Body Large Body Small Body Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Tsmax to TL - Ramp-up Rate 3°C/second max Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature (Tp) 225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to TP
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw10 APM4350KP Package Refolw Conditions pkg. thickness ³ 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume ³ 350mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 Convection 220 +5/-0°C Convection 235 +5/-0°C VPR 215-219°C VPR 235 +5/-0°C IR/Convection 220 +5/-0°C IR/Convection 220 +5/-0°C Reliability test program Test Item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t Ao E W Po P Ko Bo D F A J B C
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw11 APM4350KP Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Carrier Tape & Reel Dimensions(Cont.) Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko t SOP- 8 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP-8 12 9.3 2500