APM4034NU ANPEC | Alldatasheet

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Technical content

Features

Applications

  • 40V/20A, RDS(ON)= 29mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 5V
  • Super High Dense Cell Design
  • Reliable and Rugged
  • Lead Free Available (RoHS Compliant)
  • Inventer Application in LCM and LCD TV Top View of TO-252 N-Channel MOSFET (3) (2) (1) Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica- tion at lead-free peak reflow temperature. G D S APM4034N Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device APM4034N U : APM4034N XXXXX XXXXX - Date Code Lead Free Code

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw2 APM4034NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C 20* A TC=25°C 40 IDP 300µs Pulse Drain Current Tested TC=100°C 20 A TC=25°C 20* ID Continuous Drain Current TC=100°C 10 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W Rθ JC Thermal Resistance-Junction to Case 2.5 °C/W Rθ JA Thermal Resistance-Junction to Ambient 50 °C/W Notes： * Current limited by bond wire. Electrical Characteristics (TA = 25°C unless otherwise noted) APM4034NU Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 40 V VDS=32V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 2 3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=10V, IDS=10A 29 37 RDS(ON) a Drain-Source On-state Resistance VGS=5V, IDS=5A 45 62 mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=2A, VGS=0V 0.8 1.1 V trr Reverse Recovery Time 16 ns Qrr Reverse Recovery Charge ISD=10A, dISD/dt =100A/µs 8 nC

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw3 APM4034NU Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM4034NU Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2 Ω Ciss Input Capacitance 500 Coss Output Capacitance 70 Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz 50 pF td(ON) Turn-on Delay Time 4 8 Tr Turn-on Rise Time 11 21 td(OFF) Turn-off Delay Time 17 32 Tf Turn-off Fall Time VDD=20V, RL=20Ω , IDS=1A, VGEN=10V, RG=6Ω 3 6 ns Gate Charge Characteristics b Qg Total Gate Charge 10 14 Qgs Gate-Source Charge 1.8 Qgd Gate-Drain Charge VDS=20V, VGS=10V, IDS=10A nC Notes： a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing .

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw4 APM4034NU Typical Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance 0 20 40 60 80 100 120 140 160 180 TC=25o C 0 20 40 60 80 100 120 140 160 TC=25o C,VG=10V 0.01 0.1 1 10 100 0.1 100 300us Rds(on) Limit TC=25O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in2 pad Rθ JA :50o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw5 APM4034NU VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Characteristics (Cont.) Drain-Source On Resistance 0 5 10 15 20 25 30 35 40 VGS=10V VGS=5V 3 4 5 6 7 8 9 10 ID=10A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA 5.5V 4.5V 3.5V VGS= 7,8,9,10V

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw6 APM4034NU Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) 0.1 Tj=150o C Tj=25o C 0 1 2 3 4 5 6 7 8 9 10 VDS= 20V ID= 10A 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 Frequency=1MHz Crss Coss Ciss -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25o C: 29mΩ VGS = 10V IDS = 10A

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw7 APM4034NU

Package Information

0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 8°0° 8°0°

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw8 APM4034NU Carrier Tape t Ao E W Po P Ko Bo D F Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500 Cover Tape Dimensions A J B C Application A B C J T1 T2 W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko t TO-252 (mm)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 www.anpec.com.tw9 APM4034NU Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Physical Specifications Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classification Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Copyright  ANPEC Electronics Corp. Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level. Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures