APM3095PUC-TU

APM3095PU ANPEC | Alldatasheet

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Technical content

Features

Applications

• -30V/-8A, RDS(ON)=95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
• Power Management in Desktop Computer or DC/DC Converters Top View of TO-252 P-Channel MOSFET G D S G S D Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw2 APM3095PU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current -2.5 A Mounted on Large Heat Sink TC=25°C -20 IDP 300µs Pulse Drain Current Tested TC=100°C -10 A TC=25°C -8 ID Continuous Drain Current TC=100°C -4 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W Rθ JC Thermal Resistance-Junction to Case 2.5 °C/W Mounted on PCB of 1in2 Pad Area TA=25°C -20 IDP 300µs Pulse Drain Current Tested TA=100°C -10 A TA=25°C -4 ID Continuous Drain Current TA=100°C -2 A TA=25°C 2.5 PD Maximum Power Dissipation TA=100°C 1 W Rθ JA Thermal Resistance-Junction to Ambient 50 °C/W Mounted on PCB of Minimum Footprint TA=25°C -20 IDP 300µs Pulse Drain Current Tested TA=100°C -10 A TA=25°C -3 ID Continuous Drain Current TA=100°C -2 A TA=25°C 1.6 PD Maximum Power Dissipation TA=100°C 0.6 W Rθ JA Thermal Resistance-Junction to Ambient 75 °C/W

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw3 APM3095PU Electrical Characteristics (TA = 25°C unless otherwise noted) APM3095PU Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-6A 95 110 RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-3A 140 160 mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=-2.5A, VGS=0V -0.7 -1.3 V Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 13 Ω Ciss Input Capacitance 550 pF Coss Output Capacitance 120 pF Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V, Frequency=1.0MHz 75 pF td(ON) Turn-on Delay Time 10 20 ns Tr Turn-on Rise Time 8 20 ns td(OFF) Turn-off Delay Time 25 50 ns Tf Turn-off Fall Time VDD=-15V, RL=15Ω , IDS=-1A, VGEN=-10V, RG=6Ω 5 15 ns Gate Charge Characteristics b Qg Total Gate Charge 10 13 nC Qgs Gate-Source Charge 2 nC Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-6A 1.2 nC Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw4 APM3095PU 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in2 pad Rθ JA :50o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 180 TC=25o C 0 20 40 60 80 100 120 140 160 180 TC=25o C, VG=-10V 0.1 1 10 100 0.01 0.1 100 300us Rds(on) Limit TC=25o C 10ms 100ms DC 1ms

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw5 APM3095PU -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Characteristics (Cont.) 0 2 4 6 8 10 -6V -5V VGS=-7,-8,-9,-10V -3V -4V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250µA 0 4 8 12 16 20 100 120 140 160 180 200 VGS=-4.5V VGS=-10V 0 1 2 3 4 5 6 Tj=125o C Tj=25o C Tj=-55o C

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw6 APM3095PU Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) -VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 VGS = -10V IDS = -6A RON@Tj=25o C: 95mΩ 0.1 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 Crss Coss Ciss Frequency=1MHz 0 2 4 6 8 10 VDS=-10V IDS= -6A

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw7 APM3095PU

Package Information

TO-252 (Reference JEDEC Registration TO-252) Millimeters Inches Dim Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 D1 5.2 REF 0.205 REF E 6.35 6.73 0.250 0.265 E1 5.3 REF 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 D b E A H L C

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw8 APM3095PU Physical Specifications t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Copyright  ANPEC Electronics Corp. Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s

Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw10 APM3095PU Application A B C J T1 T2 W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko tTO-252 Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500 Customer Service Cover Tape Dimensions Carrier Tape & Reel Dimensions (Cont.) A J B C (mm) Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369