APM3020PUC-TU

APM3020P ANPEC | Alldatasheet

Document overview

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Technical content

Features

Applications

• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
• -30V/-11A, RDS(ON) = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V
• •••• Super High Density Cell Design
• •••• Reliable and Rugged Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 V ID * Maximum Drain Current – Continuous -40 IDM Maximum Drain Current – Pulsed -70 A TA=25 ºC 50PD Maximum Power Dissipation TA=100 ºC 20 W Absolute Maximum Ratings (TA = 25°C unless otherwise noted) APM3020P Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 125°C Handling Code TU : Tube TR : Tape & Reel APM3020P U : APM3020P XXXXX XXXXX - Date Code Top View of TO-252 G DS

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw2 Symbol Parameter Rating Unit TJ Maximum Junction Temperature 150 ºC TSTG Storage Temperature Range -55 to 150 ºC RθJC Thermal Resistance – Junction to Case 2.5 ºC/W Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) APM3020PSymbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage V GS=0V , IDS=-250A -30 V IDSS Zero Gate Voltage Drain Current V DS=-24V , VGS=0V -1 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA -1 -3 V IGSS Gate Leakage Current V GS=±20V , VDS=0V ±100 nA VGS=-10V , IDS=-11A 17 20RDS(ON) a Drain-Source On-state Resistance VGS=-5V , IDS=-7A 24 30 mΩ VSD a Diode Forward Voltage I SD=-11A, VGS=0V -1.3 -1.3 V Dynamicb Qg Total Gate Charge 23 30 Qgs Gate-Source Charge 10 Qgd Gate-Drain Charge VDS=-15V , VGS=-4.5V, IDS=-4.6A nC td(ON) Turn-on Delay Time 16 30 Tr Turn-on Rise Time 22 30 td(OFF) Turn-off Delay Time 75 120 Tf Turn-off Fall Time VDD=-15V , IDS=-6A , VGEN=-10 V , RG=1Ω RL=2.5Ω 31 80 ns Ciss Input Capacitance 3720 Coss Output Capacitance 580 Crss Reverse Transfer Capacitance VGS=0V VDS=-25V Frequency=1.0MHz 245 pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw3 012345 02468 1 0 0 5 10 15 20 25 30 0.005 0.010 0.015 0.020 0.025 0.030 0.035 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Typical Characteristics Output Characteristics -VDS-Drain-to-Source Voltage (V) -IDS-Drain Current (A) VGS=3V Transfer Characteristics -VGS-Gate-to-Source Voltage (V) -IDS-Drain Current (A) TJ=125°C TJ=25°C TJ=-55°C Threshold Voltage vs. Junction Temperature Tj-Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA On-Resistance vs. Drain Current -IDS-Drain Current (A) RDS(ON)-On-Resistance (Ω) -VGS=10V -VGS=5V VGS=2.5V

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw4 0 5 10 15 20 25 30 500 1000 1500 2000 2500 3000 0 1 02 03 04 0 -50 -25 0 25 50 75 100 125 150 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02468 1 00.00 0.03 0.06 0.09 0.12 0.15 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source VoltageRDS (ON)-On-Resistance (Ω) -VGS - Gate-to-Source Voltage (V) -IDS=7A On-Resistaence vs. Junction Temperature RDS(ON)-On-Resistance (Ω) (Normalized) Tj-Junction Temperature (°C) -VGS=10V -IDS=11A Gate Charge QG-Total Gate Charge (nC) -VGS-Gate-to-Source Voltage (V) -VDS=15V -IDS=4.6A Capacitance Characteristics -VDS-Drain-to-Source Voltage (V) C-Capacitance (pF) Crss Coss Ciss

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw5 10.01 0.1 500 1000 1500 2000 2500 3000 0.1 Typical Characteristics Cont. Source-Drain Diode Forward Voltage -ISD-Source Current (A) -VSD-Source-to-Drain Voltage (V ) TJ=25°CTJ=150°C Time (sec) Single Pulse Power Power (W) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient D=0.1 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA SINGLE PULSE D=0.01 D=0.02 D=0.05 D=0.2 Duty Cycle=0.5

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw6 TO-252( Reference JEDEC Registration TO-252) Millimeters InchesDim Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 D b E A H L C A1e1 Packaging Information

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw7 Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow)

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw8 Carrier Tape A J B C t Ao E W Po P Ko Bo D F Application A B C J T1 T2 W P E 330 ±31 0 0 ± 21 3 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko tTO-252 Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P www.anpec.com.tw9 Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500 Cover Tape Dimensions Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Customer Service