APM3009NU ANPEC | Alldatasheet
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Technical content
Features
Applications
- 30V/50A, RDS(ON)=7mΩ (typ.) @ VGS=10V RDS(ON)=11mΩ (typ.) @ VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free Available (RoHS Compliant)
- Power Management in Desktop Computer or DC/DC Converters Top View of TO-252 N-Channel MOSFET G D S G S D Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw2 APM3009NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C 11 A Mounted on Large Heat Sink TC=25°C 100 IDP 300µs Pulse Drain Current Tested TC=100°C 75 A TC=25°C 50* ID Continuous Drain Current TC=100°C 30 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W Rθ JC Thermal Resistance-Junction to Case 2.5 °C/W Mounted on PCB of 1in2 Pad Area TA=25°C 100 IDP 300µs Pulse Drain Current Tested TA=100°C 75 A TA=25°C 14 ID Continuous Drain Current TA=100°C 9 A TA=25°C 2.5 PD Maximum Power Dissipation TA=100°C 1 W Rθ JA Thermal Resistance-Junction to Ambient 50 °C/W Mounted on PCB of Minimum Footprint TA=25°C 100 IDP 300µs Pulse Drain Current Tested TA=100°C 75 A TA=25°C 11 ID Continuous Drain Current TA=100°C 7 A TA=25°C 1.6 PD Maximum Power Dissipation TA=100°C 0.6 W Rθ JA Thermal Resistance-Junction to Ambient 75 °C/W Note: * Current limited by bond wire.
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw3 APM3009NU Electrical Characteristics (TA = 25°C unless otherwise noted) APM3009NU Symbol Parameter Test Condition Min. Typ. Max. Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=11A, VDD=15V 30 mJ Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V VDS=24V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.5 2 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=10V, IDS=35A 7 9 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=20A 11 15 mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=20A, VGS=0V 0.7 1.3 V Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.2 Ω Ciss Input Capacitance 1710 Coss Output Capacitance 465 Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 300 pF td(ON) Turn-on Delay Time 10 15 Tr Turn-on Rise Time 7 13 td(OFF) Turn-off Delay Time 35 50 Tf Turn-off Fall Time VDD=15V, RL=15Ω , IDS=1A, VGEN=10V, RG=6Ω 10 20 ns Gate Charge Characteristics b Qg Total Gate Charge 40 52 Qgs Gate-Source Charge 4.8 Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=35A 8.4 nC Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production t esting.
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw4 APM3009NU 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in2 pad Rθ JA :50o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 180 TA=25o C 0 20 40 60 80 100 120 140 160 180 TC=25o C,VG=10V 0.1 1 10 80 0.1 100 300 10ms 100ms DC Rds(on) Limit Tc=25o C
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw5 APM3009NU VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Characteristics (Cont.) 0 20 40 60 80 100 VGS=4.5V VGS=10V 0 1 2 3 4 5 6 100 Tj=-55o CTj=25o C Tj=125o C -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA 100
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw6 APM3009NU Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25o C: 7mΩ VGS = 10V IDS = 35A 0.1 100 Tj=150o C Tj=25o C 0 5 10 15 20 25 30 500 1000 1500 2000 2500 3000 Frequency=1MHz Coss Ciss Crss 0 5 10 15 20 25 30 35 40 VDS=15V ID =35A
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw7 APM3009NU Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms td(on) tr td(off) tf V GS V DS 90% 10% EAS VDD tAV IAS VDS tp VDSX(SUS) V DD RD DUT V GS V DS RG tp DUT 0.01 W tp V DD V DS L IL RG
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw8 APM3009NU
Package Information
TO-252 (Reference JEDEC Registration TO-252) Millimeters Inches Dim Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 D1 5.2 REF 0.205 REF E 6.35 6.73 0.250 0.265 E1 5.3 REF 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 D b E A H L C
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw9 APM3009NU Physical Specifications t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 www.anpec.com.tw11 APM3009NU Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500 Customer Service Cover Tape Dimensions Carrier Tape & Reel Dimensions(Cont.) A J B C Application A B C J T1 T2 W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko tTO-252 (mm) Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369