APM2324A ANPEC | Alldatasheet
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- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Pin Description Ordering and Marking Information APM2324 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2324A : M24X XXXXX - Date Code Lead Free Code Top View of SOT-23 N-Channel MOSFET
- 20V/3A , RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free Available (RoHS Compliant) G S D Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±10 V ID* Continuous Drain Current IDM* Pulsed Drain Current VGS=4.5V A IS* Diode Continuous Forward Current A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 0.83 PD* Maximum Power Dissipation TA=100°C 0.3 W RθJA* Thermal Resistance-Junction to Ambient 150 °C/W APM2324A Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA V IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.7 V IGSS Gate Leakage Current VGS=±10V, VDS=0V ±100 nA VGS=4.5V, IDS=3A RDS(ON) a Drain-Source On-state Resistance VGS=2.5V, IDS=2A 110 mΩ VSD a Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V Gate Charge Characteristics b Qg Total Gate Charge 6.5 Qgs Gate-Source Charge 0.7 Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=3A 0.7 nC Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A APM2324A Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ω Ciss Input Capacitance 255 Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz pF td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time VDD=10V, IDS=1A, VGEN=4.5V, RG=6Ω, RL=10Ω ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A 1E-4 1E-3 0.01 0.1 10 30 0.01 0.1 Mounted on 1in 2 pad RθJA : 150 oC/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 oC 100 120 140 160 0.0 0.8 1.6 2.4 3.2 4.0 TA=25 oC, VG=4.5V Normalized Transient Thermal Resistance 0.01 0.1 100 0.01 0.1 Rds(on) Limit TA=25 oC 10ms 300µs 1ms 100ms DC
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A RDS(ON) - On - Resistance (Ω) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Normalized Threshold Voltage Typical Characteristics (Cont.) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 VGS=2.5V VGS=4.5V -50 -25 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =250µA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=125 oC Tj=25 oC Tj=-55 oC
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) Typical Characteristics (Cont.) -50 -25 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 oC: 50mΩ VGS = 4.5V IDS = 3A 0.0 0.4 0.8 1.2 1.6 0.1 Tj=150 oC Tj=25 oC 100 200 300 400 500 Frequency=1MHz Crss Coss Ciss VDS=10 V IDS = 3 A
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A Packaging Information SOT-23 D E H e A L C B Millimeters Inches Dim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e 1.90/2.1 BSC. 0.075/0.083 BSC. H 2.40 3.00 0.094 0.118 L 0.37 0.015
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Physical Specifications Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A Carrier Tape & Reel Dimensions t Ao E W Po P Ko Bo D F Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Table 2. Pb-free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level.
Description
245°C,5 SEC HOLT MIL-STD 883D-1005.7
1000 Hrs Bias @ 125°C
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability Test Program
Copyright ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 www.anpec.com.tw APM2324A Customer Service Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT- 23 5.3 3000 Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Application A B C J W P E 178±1 60 ± 1.0 12.0 2.5 ± 0.15 9.0 ± 0.5 1.4 8.0+ 0.3 - 0.3 4.0 1.75 F D Po Ao Bo Ko t SOT-23 3.5 ± 0.05 1.5 +0.1 φ 0.1MIN 4.0 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 (mm) Carrier Tape & Reel Dimensions (Cont.) A J B C