APM2321AC-TR

APM2321 ANPEC | Alldatasheet

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Technical content

Features

Applications

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

• -20V/-0.9A , RDS(ON)=370mΩ (typ.) @ VGS=-4.5V R DS(ON)=560mΩ (typ.) @ VGS=-2.5V
• •••• Super High Dense Cell Design for Extremely Low RDS(ON)
• •••• Reliable and Rugged
• Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. APM2321 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM2321A : M21X X - Date Code Symbol Parameter Rating Unit VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 V ID * Maximum Drain Current – Continuous -0.9 IDM Maximum Drain Current – Pulsed -3.6 A * Surface Mounted on FR4 Board, t ≤ 10 sec. Pin Description G D S Top View of SOT-23 P-Channel MOSFET G S D

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw2 APM2321 Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit TA=25°C 1.25PD Maximum Power Dissipation TA=100°C 0.5 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 100 °C/W APM2321Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=-250µA -20 V IDSS Zero Gate Voltage Drain Current VDS=-16V , VGS=0V -1 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250µA -0.6 -0.8 -1 V IGSS Gate Leakage Current VGS=±10V , VDS=0V ±100 nA VGS=-4.5V , IDS=-0.9A 370 520RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V , IDS=-0.8A 560 800 mΩ VSD a Diode Forward Voltage I SD=-0.5A , VGS=0V -0.8 -1.3 V Dynamicb Qg Total Gate Charge 6.8 9 Qgs Gate-Source Charge 1 Qgd Gate-Drain Charge VDS=-10V , IDS= -0.9A , VGS=-4.5V 1.1 nC td(ON) Turn-on Delay Time 51 0 Tr Turn-on Rise Time 81 2 td(OFF) Turn-off Delay Time 9.6 15 Tf Turn-off Fall Time VDD=-10V , IDS=-0.9A , VGEN=-4.5V , RG=6Ω 51 0 ns Ciss Input Capacitance 165 Coss Output Capacitance 55 Crss Reverse Transfer Capacitance VGS=0V VDS=-15V Frequency=1.0MHz 40 pF Electrical Characteristics (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw3 APM2321 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 012345 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Typical Characteristics -ID-Drain Current (A) Transfer Characteristics TJ=-55°C TJ=25°C TJ=125°C -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current -VGS=2.5V -ID - Drain Current (A) -VGS=4.5V Output Characteristics -ID-Drain Current (A) -VGS=3V -VDS - Drain-to-Source Voltage (V) -VGS=2V

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw4 APM2321 0 4 8 12 16 20 100 150 200 250 012345678 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 123456789 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Typical Characteristics (Cont.) RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature -VGS=4.5V -ID=0.9A TJ - Junction Temperature (°C) -VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss -VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) -ID=0.9A On-Resistance vs. Gate-to-Source Voltage Gate Charge QG - Gate Charge (nC) -VGS-Gate-Source Voltage (V) -VDS=10V -ID=0.9A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw5 APM2321 0.1 3.6 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 600 0.01 0.1 1 10 100 600 Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Source-Drain Diode Forward Voltage -IS-Source Current (A) TJ=150°C TJ=25°C -VSD -Source-to-Drain Voltage (V) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE D=0.01

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw6 APM2321 Packaging Information D E H S e A A1 L C B Millimeters InchesDim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e 1.90 BSC 0.075 BSC H 2.40 3.00 0.094 0.118 L 0.37 0.0015 SOT-23

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw7 APM2321 Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw8 APM2321 Carrier Tape A J B C t Ao E W Po P Ko Bo D F Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko tSOT-23 Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 www.anpec.com.tw9 APM2321 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT- 23 8 5.3 3000