APM2317AC-TRL

APM2317A ANPEC | Alldatasheet

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• -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Pin Description Ordering and Marking Information P-Channel MOSFET G S D APM2317 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2317A : M17X XXXXX - Date Code Lead Free Code Top View of SOT-23 Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw2 APM2317A Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Symbol Parameter Rating Unit VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 V ID* Continuous Drain Current -4.5 IDM* 300µs Pulsed Drain Current VGS=-4.5V -18 A IS* Diode Continuous Forward Current -1 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 0.83 PD* Maximum Power Dissipation TA=100°C 0.3 W Rθ JA* Thermal Resistance-Junction to Ambient 150 °C/W APM2317A Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -20 V VDS=-16V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -0.5 -0.7 -1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V ±100 nA VGS=-4.5V, IDS=-4.5A 28 35 VGS=-2.5V, IDS=-2.5A 38 50 RDS(ON) a Drain-Source On-state Resistance VGS=-1.8V, IDS=-2A 55 75 mΩ VSD a Diode Forward Voltage ISD=-1A, VGS=0V -0.7 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 14 20 Qgs Gate-Source Charge 2.1 Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-4.5A 4.7 nC

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw3 APM2317A Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM2317A Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 7 Ω Ciss Input Capacitance 1520 Coss Output Capacitance 225 Crss Reverse Transfer Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz 165 pF td(ON) Turn-on Delay Time 6 12 tr Turn-on Rise Time 13 24 td(OFF) Turn-off Delay Time 86 156 tf Turn-off Fall Time VDD=-10V, RL=10Ω , IDS=-1A, VGEN=-4.5V, RG=6Ω 42 77 ns trr Reverse Recovery Time 21 ns qrr Reverse Recovery Charge ISD=-4.5A, dlSD/dt =100A/µs 9 nC Notes: a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw4 APM2317A Typical Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25o C 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TA=25o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit TA=25o C 10ms 300µs 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in2 pad Rθ JA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw5 APM2317A RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics -VGS - Gate - Source Voltage (V) Typical Characteristics (Cont.) 0 1 2 3 4 5 6 7 8 9 10 ID= -4.5A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS = -250µA -1.5V -2V 0 3 6 9 12 15 18 100 VGS=4.5V VGS=1.8V VGS=2.5V Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ )

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw6 APM2317A -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25o C: 28mΩ VGS = -4.5V IDS = -4.5A 0.1 Tj=25o C Tj=150o C 0 4 8 12 16 20 300 600 900 1200 1500 1800 2100 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS= -10V ID = -4.5A

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw7 APM2317A Packaging Information SOT-23 Millimeters Inches Dim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 H 2.40 3.00 0.094 0.118 L 0.37 0.015 D E H e A A1 L C B

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw8 APM2317A Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Physical Specifications Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Copyright  ANPEC Electronics Corp. Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s

Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2006 www.anpec.com.tw10 APM2317A Application A B C J T1 T2 W P E - 0.3 4.0 1.75 F D D1 Po P1 Ao Bo Ko tSOT-23 ( mm) Customer Service Cover Tape Dimensions Carrier Tape & Reel Dimensions A J B C Application Carrier Width Cover Tape Width Devices Per Reel SOT- 23 8 5.3 3000 Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369