APM2312 ANPEC | Alldatasheet

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  • 16V/5A , RDS(ON)=35mΩ (typ.) @ VGS=4.5V R DS(ON)=45mΩ (typ.) @ VGS=2.5V /G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20/G20 RDS(ON)=60mΩ (typ.) @ V GS=1.8V
  • •••• Super High Dense Cell Design for Extremely Low RDS(ON)
  • •••• Reliable and Rugged
  • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Pin Description Ordering and Marking Information APM2312 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operation Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM2312 A : M12X X - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 16 VGSS Gate-Source Voltage ±8 V ID * Maximum Drain Current – Continuous 5 IDM Maximum Drain Current – Pulsed 15 A * Surface Mounted on FR4 Board, t ≤ 10 sec. G D S Top View of SOT-23 N-Channel MOSFET G S D

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw2 APM2312 Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit TA=25°C 1.25PD Maximum Power Dissipation TA=100°C 0.5 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 100 °C/W APM2312Symbol Parameter Test Condition Min. T yp. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , I DS=250 µ A 16 V IDSS Zero Gate Voltage Drain Current VDS=16V , V GS=0V 1 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250 µ A 0.5 0.7 1 V IGSS Gate Leakage Current VGS=±8V , V DS=0V ±100 nA VGS=4.5V , I DS=5A 35 45 VGS=2.5V , I DS=4.5A 45 55RDS(ON) a Drain-Source On-state Resistance VGS=1.8V , I DS=4A 60 70 mΩ VSD a Diode Forward Voltage I SD=1.7A , V GS=0V 0.7 1.3 V Dynamic b Qg Total Gate Charge 10 12 Qgs Gate-Source Charge 1.9 Qgd Gate-Drain Charge VDS=10V , I DS= 1A VGS=4.5V , 1.8 nC td(ON) Turn-on Delay Time 17 33 Tr Turn-on Rise Time 40 70 td(OFF) Turn-off Delay Time 45 80 Tf Turn-off Fall Time VDD=10V , I DS=1A , VGEN =4.5V , R G=0.2Ω 25 45 ns Ciss Input Capacitance 580 Coss Output Capacitance 170 Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 100 pF Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Electrical Characteristics (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw3 APM2312 0369 1 2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 012345 Typical Characteristics ID-Drain Current (A) Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current ID - Drain Current (A) VGS=4.5V Output Characteristics ID-Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS=2.5V VGS=1.5V VGS=1V

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw4 APM2312 012345678 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 4 8 12 16 20 200 400 600 800 1000 02468 1 0 1 2 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 Typical Characteristics (Cont.) VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) ID=5A On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature VGS=4.5V ID=5A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=1A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw5 APM2312 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 600 0.01 0.1 1 10 100 600 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=100°C/W 3.T JM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw6 APM2312 Packaging Information D E H S e A A1 L C B Millimeters InchesDim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e 1.90 BSC 0.075 BSC H 2.40 3.00 0.094 0.118 L 0.37 0.0015 SOT-23

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw7 APM2312 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw8 APM2312 Carrier Tape & Reel Dimensions A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program Application A B C J T1 T2 W P E - 0.3 4.0 1.75 F D D1 Po P1 Ao Bo Ko tSOT-23 ( m m )

Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 www.anpec.com.tw9 APM2312 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT- 23 8 5.3 3000