APM2306AC-TR

APM2306 ANPEC | Alldatasheet

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• Switching Regulators
• Switching Converters Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID Maximum Pulsed Drain Current ( pulse width ≤ 300µs) 3.5 IDM Maximum Drain Current – Pulsed 16 A TA=25°C 1.25 W PD Maximum Power Dissipation TA=100°C 0.5 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C /G20
• 30V/3.5A, RDS(ON)=70mΩ (typ.) @ VGS=5V R DS(ON)=42mΩ (typ.) @ VGS=10V
• •••• Super High Dense Cell Design
• •••• High Power and Current Handling Capability G D S Top View of SOT-23 APM2306 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM2306 A : M06X X - Date Code

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw2 Electrical Characteristics (TA= 25°C unless otherwise noted) APM2306Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 11 . 5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA VGS=5V, IDS=2.8A 70 90 RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=3.5A 42 65 mΩ VSD Diode Forward Voltage I SD=1.25A, V GS=0V 1.1 1.5 V Dynamic Qg Total Gate Charge 12.5 nC Qgs Gate-Source Charge 3.7 nC Qgd Gate-Drain Charge VDS=15V, VGS=5V, ID=3.5A 2.4 nC td(ON) Turn-on Delay Time 10 ns tr Turn-on Rise Time 8 ns td(OFF) Turn-off Delay Time 19 ns tf Turn-off Fall Time VDD=15V,ID=1A, VGS=10V, RG=6Ω 6.2 ns Ciss Input Capacitance 410 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 45 pF

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw3 Typical Characteristics 0123456 ID-Drain Current (A) Transfer Characteristics TJ=-55°C TJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) 02468 1 0 100 120 RDS(on)-On-Resistance (mΩ ) On-Resistance vs. Drain Current VGS=5V ID - Drain Current (A) VGS=10V Threshold Voltage vs. Temperature VGS(th)-Threshold Voltage (V) Tj - Junction Temperature (°C) 012345 Output Characteristics VDS - Drain-to-Source Voltage (V) ID-Drain Current (A) VGS=5,6,7,8,9,10V VGS=3V VGS=4V -50 -25 0 25 50 75 100 125 150 1.00 1.25 1.50 1.75 2.00 2.25 IDS=250µΑ

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw4 Typical Characteristics -50 -25 0 25 50 75 100 125 150 RDS(on)-On Resistance (mΩ ) On-Resistance vs. Junction Temperature VGS=10V ID=3.5A TJ - Junction Temperature (°C) 2468 1 0 100 120 On-Resistance vs. Gate-to-Source Voltage VGS - Gate-to-Source Voltage (V) ID=3.5A RDS(on)-On-Resistance (mΩ ) 02468 1 0 1 2 1 4 Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VD=15V ID=3.5A 0 5 10 15 20 25 30 125 250 375 500 625 750 Crss Coss Ciss Capacitance (pF) Capacitance VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw5 Typical Characteristics Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) 0.01 0.1 1 10 100 Power (W) Single Pulse Power Time (sec) 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 SINGLE PULSE D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 Duty Cycle=0.5 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw6 Packaging Information D E H S e A A1 L C B Millimeters InchesDim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e 1.90 BSC 0.075 BSC H 2.40 3.00 0.094 0.118 L 0.37 0.0015 SOT-23

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw7 Reference JEDEC Standard J-STD-020A APRIL 1999 Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219 °C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw8 Carrier Tape A J B C t Ao E W Po P Ko Bo D F Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko tSOT-23 Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 APM2306 www.anpec.com.tw9 Cover Tape Dimensions Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Customer Service Application Carrier Width Cover Tape Width Devices Per Reel SOT- 23 8 5.3 3000