APM2301CA ANPEC | Alldatasheet
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- -20V/-2.8A RDS(ON)= 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 106mΩ (typ.) @ VGS= -1.8V
- Super High Dense Cell Design
- Reliable and Rugged APM2301CA Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2301CA: C01X XXXXX - Date Code Lead Free Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. P Channel MOSFET SOT-23 G S D
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw2 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 V ID * Continuous Drain Current -2.8 b IDM * 300µs Pulsed Drain Current VGS=-4.5V -12 A IS * Diode Continuous Forward Current -1.3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA =25°C 0.83 PD * Maximum Power Dissipation TA =100°C 0.3 W Rθ JA * Thermal Resistance-Junction to Ambient 150 °C/W Notes: *Surface Mounted on 1in2 pad area, t ≤ 10sec. APM2301CA Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA -20 V VDS=-16V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS= VGS, IDS=-250µA -0.5 -0.75 -1 V IGSS Gate Leakage Current VGS=±12V, VDS=0V ±10 µA VGS=-4.5V, IDS=-2.8A 56 70 VGS=-2.5V, IDS=-2A 85 115 RDS(ON) a Drain-Source On-State Resistance VGS=-1.8V, IDS=-1A 106 165 mΩ VSD a Diode Forward Voltage ISD=-1.3A, VGS=0V -0.75 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 7 10 Qgs Gate-Source Charge 1.9 Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-2.8A 1.9 nC
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw3 Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) APM2301CA Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b Ciss Input Capacitance 580 Coss Output Capacitance 100 Crss Reverse Transfer Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz pF td(ON) Turn-on Delay Time 4 7 tr Turn-on Rise Time 13 23 td(OFF) Turn-off Delay Time 35 63 tf Turn-off Fall Time VDD=-10V, RL=10Ω , IDS=1A, VGEN=-4.5V, RG=6Ω 20 36 ns trr Reverse Recovery Time 20 ns Qrr Reverse Recovery Charge ISD=-2.8A, dlSD/dt =100A/µs 7 nC Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw4 Typical Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Normalized Effective Transient 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25o C 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit TA=25o C 10ms 300µs 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Mounted on 1in2 pad Rθ JA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw5 RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Output Characteristics Drain-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Normalized Threshold Voltage Typical Characteristics (Cont.) -1.5V -2V -2.5V 0 2 4 6 8 10 12 100 120 140 160 180 VGS= -1.8V VGS= -4.5V VGS= -2.5V 1 2 3 4 5 6 7 8 9 10 100 ID= -2.8A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= -250µA
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw6 -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (nC) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - Source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25o C: 56mΩ VGS = -4.5V IDS = -2.8A 0.1 Tj=150o C Tj=25o C 0 4 8 12 16 20 100 200 300 400 500 600 700 800 Frequency=1MHz Crss Coss Ciss 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= -10V IDS= -2.8A
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw7 Packaging Information SOT-23 D E H eS A A1 L C B Physical Specifications Parameter Inches Dim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e1 1.90 TYP 0.075 TYP H 2.40 3.00 0.094 0.118 L 0.37 0.015 Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw8 Reflow Condition (IR/Convection or VPR Reflow) t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to TP Reflow Condition Sn-Pb Eutectic Assembly Pb-Free Assembly Profile Feature Large Body Small Body Large Body Small Body Average ramp-up rate(TL to TP) 3°C/second max. 3°C/second max. Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Tsmax to TL -Ramp-up Rate 3°C/second max Time maintained above: -Temperature (TL) -Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature (Tp) 225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw9 Reflow Condition pkg. thickness ³ 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume ³ 350mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 Convection 220 +5/-0°C Convection 235 +5/-0°C VPR 215-219°C VPR 235 +5/-0°C IR/Convection 220 +5/-0°C IR/Convection 220 +5/-0°C Reliability test program Test Item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t Ao E W Po P Ko Bo D F A J B C
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2301CA www.anpec.com.tw10 Carrier Tape & Reel Dimensions (Cont.) Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko t SOT-23 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT-23 8 5.3 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369