APM2103SG ANPEC | Alldatasheet
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- -20V/-2.5A RDS(ON)= 88mΩ (typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V
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Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw2 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 V ID * Continuous Drain Current -2.5 b IDM * 300µs Pulsed Drain Current VGS=-4.5V -10 A IS * Diode Continuous Forward Current -1.3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA =25°C 1.14 PD * Maximum Power Dissipation TA =100°C 0.45 W Rθ JA * Thermal Resistance-Junction to Ambient 110 °C/W Notes: *Surface Mounted on 1in2 pad area, t ≤ 5sec. APM2103SG Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA -20 V VDS=-16V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA VGS(th) Gate Threshold Voltage VDS= VGS, IDS=-250µA -0.5 -0.7 -1 V IGSS Gate Leakage Current VGS=±10V, VDS=0V ±10 µA VGS=-4.5V, IDS=-2.5A 88 110 VGS=-2.5V, IDS=-2A 120 160 RDS(ON) a Drain-Source On-State Resistance VGS=-1.8V, IDS=-1A 160 260 mΩ VSD a Diode Forward Voltage ISD=-1.3A, VGS=0V -0.8 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 5.8 8 Qgs Gate-Source Charge 1.3 Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-2.5A 1.1 nC
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw3 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM2103SG Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b Ciss Input Capacitance 360 Coss Output Capacitance 80 Crss Reverse Transfer Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz pF td(ON) Turn-on Delay Time 8 15 tr Turn-on Rise Time 22 41 td(OFF) Turn-off Delay Time 29 53 tf Turn-off Fall Time VDD=-10V, RL=10Ω , IDS=1A, VGEN=-4.5V, RG=6Ω 32 59 ns trr Reverse Recovery Time 14 ns Qrr Reverse Recovery Charge ISD=-2.5A dlSD/dt =100A/µs 6 nc Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw4 Typical Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Normalized Effective Transient 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 TA=25o C 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit TA=25o C 10ms 300µs 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 Mounted on 1in2 pad Rθ JA : 110 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw5 RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Drain-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Normalized Threshold Voltage Typical Characteristics (Cont.) -1.5V -2V -2.5V 0 2 4 6 8 10 100 120 140 160 180 200 220 240 VGS= -1.8V VGS= -4.5V VGS= -2.5V 1 2 3 4 5 6 7 8 9 10 100 120 140 160 180 ID= -2.5A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =-250µA
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw6 -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (nC) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - Source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25o C: 88mΩ VGS = -4.5V IDS = -2.5A 0.1 Tj=150o C Tj=25o C 0 4 8 12 16 20 100 150 200 250 300 350 400 450 500 Frequency=1MHz Crss Coss Ciss 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS= -10V IDS= -2.5A
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw7 Packaging Information e b D A E L c Min. Max. Min. Max. A - 1.10 - 0.043 A1 0.00 0.10 0.000 0.004 A2 0.70 1.00 0.028 0.039 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.80 2.20 0.071 0.087 E 1.80 2.40 0.071 0.094 E1 1.65 1.85 0.065 0.073 E2 2.00 2.40 0.079 0.094 e L 0.35 0.55 0.014 0.022 áá 0 8° 0 8° 4° 10° 4° 10° Millimeters Inches Dim 0.50 BSC 0.020 BSC θ
Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 APM2103SG www.anpec.com.tw8 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369